DYNEX GP250MHB06S

GP250MHB06S
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0
FEATURES
DS4325-6.0 October 2001
KEY PARAMETERS
■
n - Channel
VCES
■
High Switching Speed
VCE(sat)
(typ)
■
Low Forward Voltage Drop
(max) 350A
Isolated Base
IC25
■
IC75
(max) 250A
IC(PK)
(max) 700A
APPLICATIONS
■
PWM Motor Control
■
UPS
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
600V
2.2V
6(G2)
11(C2)
7(E2)
3(C1)
2(E2)
1(E1C2)
5(E1)
9(C1)
4(G1)
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
Fig. 1 Half bridge circuit diagram
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
11
10
ORDERING INFORMATION
Order as:
1
2
3
8
9
6
7
5
4
GP250MHB06S
Note: When ordering, use complete part number.
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
GP250MHB06S
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Max.
Units
600
V
±20
V
DC, Tcase = 25˚C
350
A
DC, Tcase = 75˚C
250
A
1ms, Tcase = 25˚C
700
A
1ms, Tcase = 75˚C
500
A
Parameter
Collector current
IC(PK)
Test Conditions
VGE = 0V
-
Pmax
Maximum power dissipation
(Transistor)
1250
W
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Min.
Max.
-
100
o
-
250
o
-
15
o
Transistor
-
150
o
Diode
-
125
o
- 40
125
o
Mounting - M6
-
5
Nm
Electrical connections - M6
-
5
Nm
Parameter
Conditions
Rth(j-c)
Thermal resistance - transistor
DC junction to case per arm
Rth(j-c)
Thermal resistance - diode
DC junction to case
Rth(c-h)
Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease)
Tj
Tstg
-
2/10
Junction temperature
Storage temperature range
Screw torque
-
-
Units
C/kW
C/kW
C/kW
C
C
C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP250MHB06S
ELECTRICAL CHARACTERISTICS
Tj = 25˚C unless stated otherwise.
Symbol
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
15
mA
VGE = 0V, VCE = VCES, Tj = 125˚C
-
-
50
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
1
µA
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
4
-
7.5
V
2.2
2.7
V
Collector-emitter saturation voltage
VGE = 15V, IC = 250A
-
VCE(SAT)
VGE = 15V, IC = 250A, Tj = 125˚C
-
2.3
2.8
V
ICES
IGES
Parameter
Collector cut-off current
Conditions
IF
Diode forward current
DC
-
-
250
A
IFM
Diode maximum forward current
tp = 1ms
-
-
500
A
VF
Diode forward voltage
IF = 250A,
-
1.1
1.9
V
IF = 250A, Tj = 125˚C
-
1.05
1.8
V
VCE = 25V, VGE = 0V, f = 1MHz
-
27000
-
pF
Cies
Input capacitance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
GP250MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
Tj = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
Parameter
Conditions
Min.
Typ.
Max.
Units
-
810
-
ns
IC = 250A
-
310
-
ns
VGE = ±15V
-
20
-
mJ
-
330
-
ns
-
130
-
ns
-
12
-
mJ
IF = 250A
-
165
-
ns
VR = 50%VCES, dIF/dt = 1500A/µs
-
15
-
µC
-
1050
-
ns
IC = 250A
-
450
-
ns
VGE = ±15V
-
30
-
mJ
-
380
-
ns
-
160
-
ns
-
18
-
mJ
IF = 250A
-
230
-
ns
VR = 50%VCES, dIF/dt = 1500A/µs
-
23
-
µC
Turn-off delay time
Fall time
Turn-off energy loss
VCE = 50% VCES
td(on)
tr
EON
Turn-on delay time
RG(ON) = RG(OFF) = 5Ω
L ~ 100nH
Rise time
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Tj = 125˚C unless stated otherwise.
td(off)
tf
EOFF
Turn-off delay time
Fall time
Turn-off energy loss
VCE = 50% VCES
td(on)
tr
EON
Turn-on delay time
L ~ 200nH
Rise time
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
4/10
RG(ON) = RG(OFF) = 5Ω
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP250MHB06S
TYPICAL CHARACTERISTICS
Vge = 20/15V
500
Common emitter
450 Tcase = 25˚C
Common emitter
450 Tcase = 125˚C
Vge = 12V
Collector current, Ic - (A)
Collector current, Ic - (A)
350
300
250
200
Vge = 10V
150
350
300
250
200
Vge = 10V
150
100
100
50
50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Collector-emitter voltage, Vce - (V)
0
0
5
Fig.3 Typical output characteristics
5
30.0
Tj = 25˚C
27.5 VGE = ±15V
25.0 VCE = 300V
A
Tj = 125˚C
27.5 VGE = ±15V
25.0 VCE = 300V
A
22.5
B
Turn-on energy, EON - (mJ)
22.5
Turn-on energy, EON - (mJ)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
30.0
20.0
20.0
B
17.5
C
17.5
15.0
15.0
12.5
12.5
C
10.0
10.0
7.5
5.0
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
2.5
0
0
Vge = 12V
400
400
0
0
Vge = 20/15V
500
50
100
150
200
Collector current, IC - (A)
250
Fig.5 Typical turn-on energy vs collector current
300
7.5
5.0
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
2.5
0
0
50
100
150
200
Collector current, IC - (A)
300
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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250
5/10
GP250MHB06S
40
40
35
25
A
B
20
C
15
10
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
5
0
0
Diode turn-off energy, EOFF(diode) - (mJ)
Turn-off energy, EOFF - (mJ)
30
50
200
100
150
Collector current, IC - (A)
250
Tj = 125˚C
VGE = ±15V
VCE = 300V
A
B
C
30
25
20
15
10
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
5
0
0
300
50
100
150
200
Collector current, IC - (A)
250
Fig.7 Typical turn-off energy vs collector current
Fig.8 Typical turn-off energy vs collector current
5
5
Tj = 25˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
4
3
Rg = 10Ω
2
Rg = 15Ω
1
0
0
50
100
150
200
Collector current, IC - (A)
250
300
Fig.9 Typical diode turn-off energy vs collector current
6/10
Diode turn-off energy, EOFF(diode) - (mJ)
Turn-off energy, EOFF - (mJ)
Tj = 25˚C
VGE = ±15V
35 V = 300V
CE
Tj = 125˚C
VGE = ±15V
VCE = 300V
300
Rg = 5Ω
4
3
Rg = 10Ω
2
Rg = 15Ω
1
0
0
50
100
150
200
Collector current, IC - (A)
250
300
Fig.10 Typical diode turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP250MHB06S
250
1400
td(off)
Tj = 125˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
1200
225
200
175
Foward current, IF - (A)
Switching times, - (ns)
1000
150
800
tf
Tj = 125˚C
125
600
100
td(on)
400
Tj = 25˚C
75
50
200
25
tr
0
0
0
50
100
150
200
Collector current, IC - (A)
250
300
0
1.00
0.50
0.75
Foward voltage, VF - (V)
10000
600
500
Collector current, IC - (A)
1000
400
300
200
IC max. (single pulse)
50µs
100µs
100
IC
tp = 1ms
m
ax
.D
C
(c
on
tin
uo
us
)
10
100
0
0
1.25
Fig.12 Diode typical forward characteristics
Fig.11 Typical switching characteristics
Collector current, IC - (A)
0.25
Tj = 125˚C
Vge = ±15V
Rg = 5Ω
600
200
400
Collector-emitter voltage, Vce - (V)
Fig.13 Reverse bias safe operating area
800
1
1
10
100
Collector-emitter voltage, Vce - (V)
Fig.14 Forward bias safe operating area (DC and single pulse)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1000
7/10
GP250MHB06S
Transient thermal impedance, Zth (j-c) - (°C/kW )
1000
Diode
Transistor
100
10
1
0.001
0.01
0.1
Pulse width, tp - (s)
1
10
Fig.15 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP250MHB06S
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
28 ± 0.5
28 ± 0.5
6
62 ± 0.8
48 ± 0.3
11
1
10
2
3
7
4x Fast on
tabs
8
5
9
4
93 ± 0.3
3x M6
23
38max
8
106 ± 0.8
108 ± 0.8
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
GP250MHB06S
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4325-6 Issue No. 6.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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