e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 470–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated 60 70 50 60 40 50 30 40 20 VCC = 25 V 30 10 ICQ = 200 mA f = 900 MHz 20 0 201 62 LOT COD E Efficiency Output Power (Watts) Typical Output Power & Efficiency vs. Input Power 10 0 1 2 3 4 5 6 7 8 Package 20226 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10.0 Adc Total Device Dissipation at Tflange = 25°C PD 80 Watts 0.45 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.2 °C/W 1 9/28/98 e PTB 20162 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(BR)EBO 4.0 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) Gpe 8.0 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) ηC 50 — — % P-1dB 40 45 — Watts IMD -32 -35 — dBc Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Power Output at 1 dB Compression (VCC = 25 Vdc, ICQ = 200 mA, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 60 mA, f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 40 W(CW), ICQ = 200 mA, f = 900 MHz—all phase angles at frequency of test) Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 12 Gain (dB) 11 10 9 VCC = 25 V 8 ICQ = 200 mA Pout = 30 W 7 6 860 870 880 890 900 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20162 Uen Rev. C 09-28-98