ERICSSON PTB20105

e
PTB 20105
20 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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•
•
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Class AB Characteristics
Performance at 960 MHz, 25 VCC
- Output Power = 20 W
- Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated
Output Power vs. Input Power
Output Power (Watts)
25
20
201
05
15
LOT
COD
E
10
VCC = 25 V
ICQ = 0.100 A
f = 960 MHz
5
0
0
1
2
3
4
Package 20201
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
5.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
70
Watts
0.4
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
2.5
°C/W
1
9/28/98
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PTB 20105
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5.0
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz)
Gpe
9
10
—
dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz)
ηC
50
—
—
%
Ψ
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA,
f = 960 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
925
3.1
-1.8
3.1
1.4
942
3.0
-1.5
2.9
1.4
960
2.9
-1.2
2.7
1.4
2
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PTB 20105
Typical Performance
Output Power vs. Supply Voltage
Gain vs. Frequency
22
(as measured in a broadband circuit)
11
ICQ = 0.100 A
f = 960 MHz
Pin = 2.2 W
10
Gain (dB)
Output Power (Watts)
26
18
9
VCC = 25 V
ICQ = 0.100 A
Pout = 20 W
14
8
10
7
925
17
19
21
23
25
27
930
935
Vcc, Supply Voltage
940
945
950
955
960
Frequency (MHz)
Efficiency vs. Output Power
60
Efficiency (%)
50
40
30
20
VCC = 25 V
10
ICQ = 0.100 A
f = 960 MHz
0
4
8
12
16
20
24
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98