MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 25 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units MPSH10 350 2.8 125 *MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 1.0 mA, IB = 0 25 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 30 V V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 3.0 V ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain I C = 4.0 mA, VCE = 10 V VCE(sat ) Collector-Emitter Saturation Voltage I C = 4.0 mA, IB = 0.4 mA 60 0.5 V VBE( on) Base-Emitter On Voltage I C = 4.0 mA, VCE = 10 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product 650 Ccb Collector-Base Capacitance I C = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz Crb Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.35 rb’Cc Collector Base Time Constant I C = 4.0 mA, VCB = 10 V, f = 31.8 MHz MHz 0.7 pF 0.65 pF 9.0 pS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPSH10 / MMBTH10 NPN RF Transistor (continued) 100 Vce = 5V 80 125 °C 60 25 °C 40 20 - 40 °C 0 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 VBESAT- BASE-EMITTER VOLTAGE (V) P 42 Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 0.9 - 40 °C 0.8 25 °C 0.7 125 °C 0.6 0.5 0.4 0.3 0.1 20 0.2 β = 10 0.15 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0.01 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 42 Collector-Cutoff Current vs Ambient Temperature Power Dissipation vs Ambient Temperature 100 350 10 VCB = 30V 1 0.1 25 Collector-Emitter Saturation Voltage vs Collector Current P 42 PD - POWER DISSIPATION (mW) ICBO- COLLECTOR CURRENT (nA) IC 1 10 - COLLECTOR CURRENT (mA) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 50 75 100 125 ° T A - AMBIENT TEMPERATURE ( C) 150 300 SOT-23 250 TO-92 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Output Admittance 80 g 40 VCE = 10V 0 I C = 5 mA ib -40 b ib -80 -120 100 200 500 f - FREQUENCY (MHz) 1000 Yob - OUTPUT ADMITTANCE (mmhos) Y ib - INPUT ADMITTANCE (mmhos) Input Admittance 120 12 10 VCE = 10V I C = 5 mA 8 6 b ob 4 g ob 2 0 100 Forward Transfer Admittance 120 b fb 80 40 0 g fb -40 -80 -120 100 1000 P 42 (BASE) VCE = 10V I C = 5 mA 200 500 f - FREQUENCY (MHz) 1000 Yrb - REVERSE ADMITTANCE (mmhos) Y fb - FORWARD ADMITTANCE (mmhos) P 42 (BASE) 200 500 f - FREQUENCY (MHz) Reverse Transfer Admittance 8 VCE = 10V 6 I C = 5 mA 4 -b rb 2 -g rb 0 100 200 500 f - FREQUENCY (MHz) ( S ) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Output Admittance Yoe - OUTPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Input Admittance 24 VCE = 10V I C = 2 mA 20 g ie 16 12 b ie 8 4 0 100 200 500 f - FREQUENCY (MHz) 1000 6 VCE = 10V 5 I C = 2 mA 4 b oe 3 2 1 g oe 0 100 200 500 f - FREQUENCY (MHz) 1000 Forward Transfer Admittance 60 VCE = 10V 40 g I C = 2 mA fe 20 0 -20 -40 -60 100 b fe 200 500 f - FREQUENCY (MHz) P 42 (EMITTER) 1000 Yre - REVERSE ADMITTANCE (mmhos) Y fe - FORWARD ADMITTANCE (mmhos) P 42 (EMITTER) Reverse Transfer Admittance 1.2 1 VCE = 10V I C = 2 mA 0.8 -b re 0.6 0.4 0.2 0 100 -g re 200 500 f - FREQUENCY (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 KΩ Ω 10 KΩ Ω VCC = 12 V 1000 pF 1000 pF 0.8-10 pF 100 pF L2 T1 2.0 pF TUM 1000 pF Input 50 Ω 0.8-10 pF L1 5.0-18 pF 1000 pF 680 Ω 1000 pF L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output Ω into 50Ω RFC (NOTE 1) 1000 pF 2.2 KΩ Ω - VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC VCC FIGURE 2: 500 MHz Oscillator Circuit MPSH10 / MMBTH10 NPN RF Transistor