Transistors IC SMD Type Product specification MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 3 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PD 300 mW RθJA 417 ℃/W Thermal Resistance, Junction to Ambient (Note 1) Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collecto- base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 30 V Collector- emitter breakdown voltage V(BR)CEO Ic= 0.1 mA， IB=0 25 V Emitter - base breakdown voltage V(BR)EBO IE= 10μA， IC=0 3 V Collector cut-off current IcBO VCB= 25 V , IE=0 Emitter cut-off current IEBO VEB= 2V , IC=0 DC current gain hFE VCE= 10V, IC= 4mA Collector-emitter saturation voltage VCE(sat) IC=4 mA, IB= 5mA Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 0.4mA Transition frequency fT VCE= 10V, IC= 4mA,f=100MHz 0.1 μA 0.1 μA 0.4 V 60 0.5 650 V MHz ■ Marking Marking 3EM http://www.twtysemi.com [email protected] 4008-318-123 1 of 1