HITACHI 2SC461

2SC460, 2SC461
Silicon NPN Epitaxial Planar
Application
• 2SC460 high frequency amplifier, mixer
• 2SC461 VHF amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC460, 2SC461
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC460
2SC461
Unit
Collector to base voltage
VCBO
30
30
V
Collector to emitter voltage
VCEO
30
30
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
2
2SC460, 2SC461
Electrical Characteristics (Ta = 25°C)
2SC460
2SC461
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
—
—
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
—
—
30
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
—
—
0.5
µA
VCB = 18 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.5
—
—
0.5
µA
VEB = 2 V, IC = 0
—
0.63
0.75
—
0.63
0.75
V
VCE = 12 V, IC = 2 mA
35
—
200
35
—
200
—
0.6
1.1
—
0.6
1.1
V
I C = 10 mA, IB = 1 mA
Gain bandwidth product f T
—
230
—
—
230
—
MHz
VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.8
3.5
—
1.8
3.5
pF
VCB = 10 V, IE = 0,
f = 1 MHz
10.7 MHz power gain
PG
26
29
—
—
—
—
dB
VCE = 6 V, IE = –1 mA
f = 10.7 MHz
100 MHz power gain
PG
—
—
—
13
17
—
dB
VCE = 6 V, IE = –1 mA
f = 100 MHz
Noise figure
NF
—
2.0
—
—
—
—
dB
VCE = 6 V, IE = –1 mA
f = 1MHz
Rg = 500Ω
Base to emitter voltage VBE
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Note:
1
VCE(sat)
VCE = 12 V, IC = 2 mA
1. The 2SC460 and 2SC461 are grouped by h FE as follows.
A
B
C
35 to 70
60 to 120
100 to 200
3
2SC460, 2SC461
Small Signal y Parameters (VCE = 6 V, IC = 1 mA, Emitter Common)
Item
Symbol f
2SC460A,
2S461A
2SC460B,
2SC461B
2SC460C,
2SC461C
Unit
Input admittance
yie
455 kHz
0.58 + j0.074
0.42 + j0.068
0.30 + j0.051
mS
4.5 MHz
0.65 + j0.79
0.50 + j0.7
0.35 + j0.57
10.7 MHz 0.91 + j2.0
0.61 + j1.9
0.39 + j1.3
100 MHz 7.4 + j14
5.6 + j12
3.8 + j6.0
455 kHz
–j0.003
–j0.003
–j0.003
4.5 MHz
–j0.04
–j0.04
–j0.04
10.7 MHz –j0.13
–j0.13
–j0.13
100 MHz –j1.0
–j1.0
–j1.0
455 kHz
38 – j0.1
37 – j0.1
37 – j0.2
4.5 MHz
35 – j1.0
35 – j1.2
34 – j1.8
10.7 MHz 34 – j2.5
34 – j2.5
33 – j4.5
100 MHz 28 – j20
28 – j19
20 – j19
Reverse transfer admittance yre
Forward transfer admittance yfe
Output admittance
4
yoe
455 kHz
0.0098 + j0.009 0.013 + j0.009
0.016 + j0.012
4.5 MHz
0.02 + j0.09
0.023 + j0.092
0.03 + j0.10
10.7 MHz 0.11 + j0.4
0.11 + j0.4
0.12 + j0.4
100 MHz 0.40 + j1.7
0.50 + j2.0
0.83 + j2.0
mS
mS
mS
2SC460, 2SC461
Typical Output Characteristics
10
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
250
200
150
100
50
100
80
8
60
6
4
40
2
20 µA
IB = 0
0
0
100
150
50
Ambient Temperature Ta (°C)
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
100
8
VCE = 6 V
6
4
2
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
10
80
60
40
VCE = 6 V
20
0
0.1
3
10
0.3
1.0
Collector Current IC (mA)
30
5
2SC460, 2SC461
Noise Figure vs. Collector Current
Noise Figure vs. Collector Current
24
VCE = 6 V
Rg = 500 Ω
f = 1.0 MHz
4
20
Noise Figure NF (dB)
Noise Figure NF (dB)
5
3
2
1
16
12
8
4
0
0.2
0.5
1.0
2
5
Collector Current IC (mA)
0
0.1
10
12
10
8
6
4
2
0
10
20
50 100 200
500 1000
Signal Source Resistance Rg (Ω)
Gain Bandwidth Product fT (MHz)
500
VCE = 6 V
IC = 1 mA
f = 100 MHz
10
Noise Figure NF (dB)
0.2
0.5 1.0
2
5
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Noise Figure vs. Signal Source Resistance
6
VCE = 6 V
Rg = 50 Ω
f = 100 MHz
400
VCE = 6 V
300
200
100
0
0.1
3
10
0.3
1.0
Collector Current IC (mA)
30
2SC460, 2SC461
Gain Bandwidth Product vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector to Emitter Voltage
Percentage of Relative to VCE = 6 V (%)
Gain Bandwidth Product fT (MHz)
400
IC = 1 mA
300
200
100
0
1
500
200
goe
bie
gie
100
goe
10
1
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IE = 1 mA (%)
gie
200
bie
boe
boe
50
bie
gie
20
10
0.1
goe
0.2
0.5
1.0
2
Collector Current IC (mA)
boe
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
goe
100
bie
20
Input/Output Admittance vs.
Collector Current
VCE = 6 V
f = 455 kHz
gie
50
10
20
2
5
Collector to Emitter Volgage VCE (V)
500
IC = 1 mA
f = 455 kHz
boe
5
500
IC = 1 mA
f = 455 kHz
200
bre
bfe
100 g
fe
gfe
bfe
bre
50
20
10
1
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
7
2SC460, 2SC461
Input/Output Admittance vs.
Collector to Emitter Voltage
500
VCE = 6 V
f = 455 kHz
bfe
gfe
200
bre
100
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
Transfer Admittance vs.
Collector Current
bre
50
20
gfe
10
0.1
bfe
1.0
2
0.2
0.5
Collector Current IC (mA)
500
200
goe
100
gie
50
1
goe
50
gie
bie
boe
boe
bie
gie
20
10
0.1
goe
0.2
0.5
1.0
2
Collector Current IC (mA)
bie
goe boe
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
8
100
gie
10
5
500
200
bie
20
Input/Output Admittance vs.
Collector Current
VCE = 6 V
f = 4.5 MHz
IC = 1 mA
f = 4.5 MHz
boe
5
500
IC = 1 mA
f = 4.5 MHz
200
bre
bfe
100
gfe
bre
gfe
bfe
50
20
10
1
2
5
10
20
50
Collector to Emitter Voltage VCE (V)
2SC460, 2SC461
Input/Output Admittance vs.
Collector to Emitter Voltage
500
VCE = 6 V
f = 4.5 MHz
bfe
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
Transfer Admittance vs.
Collector Current
gfe
200
bre
100
bre
50
20
gfe
bfe
10
0.1
0.2
0.5
1.0
2
Collector Current IC (mA)
5
500
IC = 1 mA
f = 10.7 MHz
200
goe
100
gie
20
10
1
100
bie
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
200
goe
bie
boe
50 boe
gie
20
10
0.1
goe
1.0
2
0.2
0.5
Collector Current IC (mA)
bie
goe boe
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
gie
gie
bie
50
Input/Output Admittance vs.
Collector Current
VCE = 6 V
f = 10.7 MHz
boe
5
500
IC = 1 mA
f = 10.7 MHz
200
bre
bfe
100
gie
bfe
gie
bre
50
20
10
1
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
9
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
f = 10.7 MHz
200
Input/Output Admittance vs.
Collector to Emitter Voltage
bfe
gfe
bre
100
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
2SC460, 2SC461
bre
50
20
gfe
bfe
10
0.1
0.2
0.5
1.0
2
Collector Current IC (mA)
500
200
goe b
oe
100
gie
50
1
2
5
10
20
50
Collector to Emitter Voltage VCE (V)
Percentage of Relative to VCE = 6 V (%)
Percentage of Relative to IC = 1 mA (%)
10
Transfer Admittance vs.
Collector to Emitter Voltage
VCE = 6 V
f = 100 MHz
goe
200
bie
gie
boe
bie
50
gie
20
goe
10
0.1
1.0
2
0.2
0.5
Collector Current IC (mA)
bie
goe boe
10
5
500
boe
gie
20
Input/Output Admittance vs.
Collector Current
100
bie
IC = 1 mA
f = 100 MHz
5
500
IC = 1 mA
f = 100 MHz
200
bre
gfe
100
bfe
50
bfe
gfe
bre
20
10
1
10
20
50
2
5
Collector to Emitter Voltage VCE (V)
2SC460, 2SC461
Percentage of Relative to IC = 1 mA (%)
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
f = 100 MHz
200
100
bfe
gfe
bre
bre
50
gfe
20
bfe
10
0.1
1.0
2
0.2
0.5
Collector Current IC (mA)
5
11
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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