DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г KT816A KT816Б KT816B KT816Г KT817A KT817Б KT817B KT817Г КТ8126А1 КТ8126Б1 КТ8164А КТ8164Б КТ8170А1 КТ8170Б1 КТ8176А КТ8176Б КТ8176В 70 Pin to Pin Compatibility (continued) РC VCB VCE VEB Polarity max, max, max, max, W V V V IC max, mА 10 0.015 150 10 TO-92 0.1 1000 700 TO-92 0.1 0.1 10 10 0.05 1.0 100 100 250 TO-92 TO-92 TO-126 200 TO-92 5 1500 0.5 ≥25 1500 0.5 ≥25 1000 40…200 0.85 >150 0.25 150…340 0.25 800 110…220 0.5 200…450 VKER 5000 >15 >15 2.5 >15 3.0 >25 1500 40…275 0.6 40…275 40…275 30…275 1500 40…275 0.6 40…275 40…275 30…275 3000 25…275 0.6 5 3000 9 8000 8…60 9 4000 9 9 5 40 40 50 5 6 6 200 200 100 NPN 0.5 45 30 6 100 NPN 1.5 150 NPN PNP NPN 0.625 0.625 1.0 BC337 BC338 NPN 0.5 35 30 35 80 80 60 40 40 45 30 4 BC639 BC640 2SC495 2CS496 40 30 40 100 100 60 40 40 50 30 KSD362 NPN 30 300 45 30 5 PNP 10 5 NPN 10 PNP 25 NPN 25 NPN 80 NPN 75 NPN 40 NPN 40 40 50 70 100 40 50 70 100 40 45 60 100 40 45 60 100 400 300 400 300 400 300 60 80 100 5 5 4 5 KSD773 700 600 700 600 700 600 60 80 100 0.05 0.05 0.015 TO-92 TO-92 TO-92 40 60 60 BD233 BD235 BD237 MJE13007 MJE13006 MJE13005 MJE13004 MJE13003 MJE13002 TIP31A TIP31B TIP31C 100…300 0.4 100…300 0.3 120…450 0.6 250 300 150 0.625 0.625 0.5 BD234 BD236 BD238 FT, МHz Package (Pads) PNP NPN NPN BD135 BD137 BD139 ICBO, μА Nf, dB 2N3906 2N3904 BC182 BC182A BC182B BC183 BC183A BC183B BC183C 2N4073 BD136 BD138 BD140 VCE sat, V 5 hFE 120…220 200…450 110…800 0.6 110…220 200…450 420…800 1.0 TO-92 50 40 TO-126 50 40 TO-126 100 3.0 TO-126 100 3.0 TO-126 1.0 1000 4.0 TO-220 8…40 1.0 1000 1500 8…40 1.0 1000 3000 >25 1.2 25…275 0.6 TO-220 4.0 TO-126 3.0 TO-220 DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part КТ8177А КТ8177Б КТ8177В КТ8212А КТ8212Б КТ8212В КТ8213А КТ8213Б КТ8213В КТ738А КТ739А КТ732А КТ733А КТ8224А КТ8224Б* КТ8225A КТ8228А КТ8228Б* КТ8229А КТ8230А КТ8261А (continued) РC VCB VCE VEB IC Pin to Pin Polarity max, max, max, max, max, Compatibility W V V V mА 5 3000 60 PNP 40 60 TIP32A 80 80 TIP32B 100 100 TIP32C 5 6000 60 NPN 65 60 TIP41С 80 80 TIP41B 100 100 TIP41A 5 6000 60 PNP 65 60 TIP42C 80 80 TIP42B 100 100 TIP42A MJE2955 PNP 75 70 60 5 10000 MJE3055 NPN 75 70 60 5 10000 TIP3055 NPN 90 70 60 5 15000 TIP2955 PNP MJE4343 NPN 125 160 160 7 16000 MJE4353 PNP BU2508A NPN 100 1500 700 7.5 8000 BU2508D BU941ZP NPN 155 350 5 15000 3.0 TO-220 20…100 1.1 20…100 1.1 20…100 1.1 2.0 4…7 1.0 Iebo=1.0 >300 1.8 КТ8247А КТ8248А KT538A MJE13001 NPN 0.7 400 9 0.5 5…90 0.5 NPN NPN NPN NPN NPN 90 100 60 0.7 10 600 Ucek 1500 700 330 600 40 700 400 160 400 30 7.5 9 6 9 5 5000 10000 7000 0.5 3000 3.8…9.0 >10 >15 5…90 60…120 100…200 160…320 200…400 60…120 100…200 160…320 200…400 3.0 1.0 1.0 0.5 0.5 NPN 100 BU508D 750 TO-220 TO-220 TO-218 1.0 TO-218 TO-218 100..187 1.8 0.65 0.65 0.5 3.0 3000 1000 1000 1000 8…15 15…75 15…75 >10 >10 >22 3.8…9.0 5 TO-220 1.5 ICES=400 25000 25000 2000 5000 5000 5000 30 3.0 15…75 5 5 9 9 12 7.5 40 12000 Package (Pads) TO-220 180 180 400 400 400 700 10 7.5 Nf, dB 3.0 180 180 700 700 700 Vcek 1500 PNP 800 FT, МHz 1.5 ICES=400 125 125 25 40 75 90 BUH100 BU407 MJE13001 KSD882R KSD882O KSD882Y KSD882G KSB772R KSB772O KSB772Y KSB772G BU508А BU508 1500 ICBO, μА 15…75 NPN PNP NPN NPN NPN NPN BU2506F 125 >25 VCE sat, V 1.2 BU2525A BU2525D TIP35F TIP36F BUD44D2 BUL44D2 BUL45D2 BU2506F КТ8248А1 KT8290A КТ8255А KT8270A KT8296A KT8296Б KT8296В KT8296Г KT8297A KT8297Б KT8297В KT8297Г KT872A KT872Б KT872B KT872Г* NPN hFE Veb=5.0V TO-218 Iebo=20 5.0…9.5 5.0 Iebo=1.0 1000 80…150 1.8 Iceo=1.0 1.0 0.1 0.1 100 Icek, mA 1.0 1000 Icek,мА 1.0 0.1 1.0 1000 100 3.0 3.0 TO-218 TO-218 TO-126 TO-220 TO-220 TO-218 4 TO-92 TO-218 4 ТО-220 ТО-220 TO-126 TO-126 0.5 100 TO-126 4.0 1500 1500 1200 1500 700 700 600 700 6 60 60 75 300 250 160 300 60 60 75 300 250 160 250 5 5 5 0.8 0.8 0.8 5 100 >25 1.0 0.05 5 100 50…250 1.0 0.05 >6 TO-218 1.0 5.0 1.0 1.0 TO-218 with clamping diode KT928A KT928Б KT928B KT940A KT940Б KT940B КТ969А 2N2218 2N2219 2N2219A BF459 BF458 NPN NPN NPN 0.5 0.5 0.5 NPN 10 BF469 NPN 6 20…100 1.0 50…200 1.0 100…300 1.0 5.0 5.0 1.0 250 250 250 TO-126 TO-126 TO-126 TO-126 60 TO-126 71 DISCRETE SEMICONDUCTOR Transistors • Power Bipolar Darlington Transistors Part KT8115A KT8115Б KT8115B KT8116A KT8116Б KT8116B КТ8214А КТ8214Б КТ8214В КТ8215А КТ8215Б КТ8215В KT8156A КТ8156Б KT8158A KT8158Б KT8158B KT8159A KT8159Б KT8159В КТ8225А КТ8251А KT972A KT972Б KT972B KT972Г KT973A KT973Б KT973B PNP РC max, W 65 NPN 65 NPN 50 PNP 50 NPN 60 NPN 125 Pin to Pin Polarity Compatibility TIP127 TIP126 TIP125 TIP122 TIP121 TIP120 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 BU807 BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BU941ZP BDV65F BD875 PNP 125 NPN NPN NPN 155 125 8.0 BD876 PNP 8.0 VCB max, V 100 80 60 100 80 60 60 80 100 60 80 100 330 VCE max, V 100 80 60 100 80 60 60 80 100 60 80 100 150 200 60 80 100 60 80 100 350 180 60 45 60 60 60 45 60 60 80 100 60 80 100 350 180 60 45 60 60 60 45 60 VEB max, V 5 IC max, mА 5000 >1000 VCE I FT, Packasat, CBO, ge μА МHz V 2.0 200 4 TO-220 5 5000 >1000 2.0 5 2000 >500 2.5 1000 TO-220 5 2000 >500 2.5 1000 TO-220 6 8000 >100 1.5 1000 TO-220 5 12000 >1000 2.0 400 TO-218 5 12000 >1000 2.0 400 TO-218 5 5 5 15000 10000 2000 200 TO-218 TO-218 TO-126 5 2000 >300 2.7 100 >100 2.0 0.4 1.5 >750 1.5 >750 750…5000 1.5 750…5000 0.95 1.5 >750 1.5 >750 750…5000 1.5 200 TO-126 hFE 200 4 TO-220 • Unijunction Transistors Part KT132A KT132Б KT133A KT133Б Pin to Pin P max, Vb, b2 max, Compatibility W V 2N2646 0.3 35 2N2647 2N4870 0.3 35 2N4871 Ie pulse, A 2.0 1.5 Ie rev, μA 12.0 0.2 1.0 Veb sat, V 3.5 2.5 η Package 0.56…0.75 0.68…0.82 0.56…0.75 0.70…0.85 Case 22A-01 TO-92 • Logic Level N-Channel MOSFETs Part КП723Г КП727В КП744Г КП745Г КП746Г КП737Г КП750Г КП775А КП775Б КП775В 72 Pin to Pin Vds max, Compatibility V IRLZ44 60 IRLZ34 60 IRL520 100 IRL530 100 IRL540 100 IRL630 200 IRL640 200 2SK2498А-В 60 55 60 Rds (on) Ohm 0.028 0.05 0.27 0.22 0.077 0.4 0.18 0.009 0.009 0.011 Id max, A 50 30 9.2 15 28 18 18 50 Vgs max, V ±10 ±10 ±10 ±10 ±10 ±10 ±10 ±20 P max, W 150 88 60 88 150 50 50 150 Vgs (th), V 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 1.0…2.0 Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 DISCRETE SEMICONDUCTOR Transistors • Low Power MOSFETs Part КП501А КП501Б КП501В КП502А КП503А КП504А КП504Б КП504В КП504Г КП504Д КП504Е КП505А КП505Б КП505В КП505Г КП507A КП508A КП509А9 КП509Б9 КП509В9 КП510A9 КП511A КП511Б КП523А КП523Б КП214А9 Pin to Pin P max, Compatibility W ZVN2120 0.5 BSS124 BSS129 BSS88 BSS295 BSS315 BSS92 BSS131 IRML2402 TN0535 TN0540 BSS297 2N7002LT1 Vgs max, V ±20 ±10 ±10 ±10 1.0 1.0 1.0 1.0 0.7 0.7 0.7 0.7 1.0 1.0 1.0 0.7 1.0 1.0 0.36 0.50 0.36 0.54 0.75 ±12 ±20 1.0 1.0 0.2 ±20 ±14 ±40 ±10 ±20 ±20 ±14 Vds max, V 240 200 200 400 400 250 250 200 180 200 200 50 50 60 8 -50 -240 240 240 200 20 350 400 200 200 60 Vgs(off), V 1.0…3.0 1.0…3.0 Id max, A 10 g fs, A/V >0.1 0.12 0.12 0.32 0.1 0.1 0.14 TO-92 TO-92 TO-92 0.8…2.0 0.8…2.0 0.8…2.0 0.4…0.8 -0.8…-2.0 -0.8…-2.0 0.8…-2.0 0.6…-1.2 0.8…-2.0 0.7…-1.6 0.8…-2.0 Rds(on), Ohm 10 10 15 28 28 8 8 8 10 8 8 0.3 0.3 0.3 1.2 0.8 20 16 8 16 0.25 22 1.4 0.5 0.5 0.5 TO-92 -1.1 -0.15 0.1 0.25 0.1 1.2 0.14 0.06 0.14 0.06 1.3 0.125 0.8…2.0 0.8…2.0 1.0…2.5 2.0 4.0 7.5 0.48 0.34 0.115 0.5 0.5 0.08 1.5…2.5 1.5…2.5 0.6…1.2 Package TO-92 TO-92 TO-92 SOT-23 SOT-23 TO-92 TO-92 SOT-23 • Power N-Channel MOSFETs Pin to Pin Vds max, Compatibility V 60 IRFZ44 КП723А 60 IRFZ45 КП723Б 50 IRFZ40 КП723В КП726А BUZ90A 600 КП726Б BUZ90 КП727А BUZ71 50 КП727Б IRFZ34 60 700 КП728Г1,Г2 BUZ80A 650 КП728С1,С2 600 КП728Е1,Е2 60 IRFZ14 КП739А 50 IRFZ10 КП739Б 60 IRFZ15 КП739В 60 IRFZ24 КП740А 50 IRFZ20 КП740Б 60 IRFZ25 КП740В КП741А IRFZ48 60 КП741Б IRFZ46 50 КП742А STH75N06 60 КП742Б STH80N05 50 Part Rds (on), Ohm 0.028 0.035 0.028 2.0 1.6 0.1 0.05 5.0 4.0 3.0 0.2 0.2 0.3 0.1 0.1 0.12 0.018 0.024 0.014 0.012 Id max, A 50 50 50 4.0 4.5 14 30 3.0 Vgs max, V ±20 P max, W 150 Vgs (th), V 2.0…4.0 ±20 75 2.0…4.0 TO-220 ±20 75 2.0…4.0 TO-220 ±20 75 2.0…4.0 TO-220 10 10 8.3 17 17 14 50 ±20 43 2.0…4.0 TO-220 ±20 60 2.0…4.0 TO-220 ±20 190 150 200 2.0…4.0 TO-220 2.0…4.0 TO-218 75 80 ±20 Package TO-220 73 DISCRETE SEMICONDUCTOR Transistors • Power N-Channel MOSFETs Part КП743А КП743Б КП743В КП743А1 КП744А КП744Б КП744В КП745А КП745Б КП745В КП746А КП746Б КП746В КП747А КП748А КП748Б КП748В КП749А КП749Б КП749В КП737А КП737Б КП737В КП750А КП750Б КП750В КП731А КП731Б КП731В КП751А КП751Б КП751В КП752А КП752Б КП752В Pin to Pin Vds max, Compatibility V 100 IRF510 80 IRF511 100 IRF512 100 100 IRF520 80 IRF521 100 IRF522 100 IRF530 80 IRF531 100 IRF532 100 IRF540 80 IRF541 100 IRF542 IRFP150 100 200 IRF610 150 IRF611 200 IRF612 200 IRF620 150 IRF621 200 IRF622 200 IRF630 250 IRF634 200 IRF635 200 IRF640 150 IRF641 200 IRF642 400 IRF710 350 IRF711 400 IRF712 400 IRF720 350 IRF721 400 IRF722 400 IRF730 350 IRF731 400 IRF732 Rds (on), Ohm 0.54 0.54 0.74 0.54 0.27 0.27 0.36 0.16 0.16 0.23 0.077 0.077 0.1 0.055 1.5 1.5 2.4 0.8 0.8 1.2 0.4 0.45 0.68 0.18 0.18 0.22 3.6 3.6 5.0 1.8 1.8 2.5 1.0 1.0 1.5 (continued) Id max, Vgs max, A V 5.6 ± 20 5.6 4.9 5.5 ±20 9.2 ±20 9.2 8.0 14.0 ±20 14.0 12.0 28.0 ±20 28.0 25.0 41.0 ±20 3.3 ±20 3.3 2.6 5.2 ±20 5.2 4.0 9.0 ±20 8.1 6.5 18.0 ±20 18.0 16.0 2.0 ±20 2.0 1.7 3.3 ±20 3.3 2.8 5.5 ±20 5.5 4.5 P max, W 43 Vgs (th), V 2.0…4.0 40 60 2.0…4.0 2.0…4.0 TO-126 TO-220 88 2.0…4.0 TO-220 150 2.0…4.0 TO-220 230 36 2.0…4.0 2.0…4.0 TO-218 TO-220 50 2.0…4.0 TO-220 74 2.0…4.0 TO-220 125 2.0…4.0 TO-220 36 2.0…4.0 TO-220 50 2.0…4.0 TO-220 74 2.0…4.0 TO-220 Package TO-220 TO-126 Pilot Production КП753А КП753Б КП753В IRF830 IRF831 IRF832 500 450 500 1.5 1.5 2.0 4.5 4.5 4.0 ±20 74 2.0…4.0 TO-220 STP40N10 IRF740 IRF741 IRF742 IRF744 100 400 350 400 450 0.04 0.55 0.55 0.8 0.63 40 10.0 10.0 8.3 8.8 ±20 ±20 150 125 2.0…4.0 2.0…4.0 TO-220 TO-220 Pilot Production КП771А КП776А КП776Б КП776В КП776Г Pilot Production 74 DISCRETE SEMICONDUCTOR Transistors • Power N-Channel MOSFETs Pin to Pin Vds max, Compatibility V 500 IRF840 450 IRF841 500 IRF842 Part КП777А КП777Б КП777В Rds (on), Ohm 0.85 0.85 1.1 (continued) Id max, Vgs max, A V 8.0 ±20 8.0 7.0 P max, W 125 Vgs (th), V 2.0…4.0 Package TO-220 Pilot Production IRFP250 IRFP450 200 500 0.085 0.4 30.0 14.0 ±20 ±20 190 190 2.0…4.0 2.0…4.0 TO-220 TO-220 IRF820 IRF821 IRF822 IRFP350 500 450 500 400 3.0 3.0 4.0 0.3 2.5 2.5 2.2 16.0 ±20 50 2.0…4.0 TO-220 ±20 190 2.0…4.0 TO-220 IRF3205 55 0.008 70.0 ±20 200 2.0…4.0 TO-220 Pilot BUZ80A 800 3.0 4.0 ±20 100 2.0…4.0 TO-220 Pilot BUZ91A 600 0.9 8.0 ±20 150 2.0…4.0 TO-220 BUZ111S 320 0.008 80.0 ±20 250 2.1…4.0 TO-220 Id max, A -18.0 -19.0 -4.3 Vgs max, V ±20 ±20 ±20 P max, W 88 150 74 Vgs (th), V -2.0…-4.0 -2.0…-4.0 -2.0…-4.0 КП778А КП779А Pilot Production КП780А КП780Б КП780В КП781А Pilot Production КП783А Pilot Production КП786А Production КП787А Production КП789А Pilot Production • Power P-Channel MOSFETs Part КП784A КП785A КП796А Pin to Pin Vds max, Compatibility V IRF9Z34 -60 IRF9540 -100 IRF9634 -250 Rds (on), Ohm 0.14 0.20 1.0 Package TO-220 TO-220 TO-220 Under Development 75