IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. Ordering Information PART NUMBER IRF820 1581.4 Features • 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol PACKAGE TO-220AB File Number BRAND D IRF820 NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-245 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF820 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF820 500 500 2.5 1.6 8.0 ±20 50 0.4 210 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V - - 25 µA Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time SYMBOL IDSS ID(ON) IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time TEST CONDITIONS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.5 - - A VGS = ±20V - - ±100 nA ID = 1.4A, VGS = 10V (Figures 8, 9) - 2.5 3.0 Ω 1.5 2.3 - S - 11 15 ns - 11 18 ns - 29 42 ns - 12 18 ns - 12 19 nC - 2.5 - nC VDS ≥ 10V, ID = 2.0A (Figure 12) VDD = 250V, ID ≈ 2.5A, RGS = 18Ω, RL = 96Ω MOSFET Switching Times are Essentially Independent of Operating Temperature td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature - 6.0 - nC - 360 - pF COSS - 60 - pF CRSS - 10 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 2.5 oC/W - - 80 oC/W LD VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-246 Free Air Operation IRF820 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier D MIN TYP MAX UNITS - - 2.5 A - - 8.0 A - - 1.6 V 130 300 540 ns 0.57 1.4 2.3 µC G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 2.5A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A. Typical Performance Curves Unless Otherwise Specified 2.5 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 2.0 1.5 1.0 0.5 0 0 50 100 150 TC , CASE TEMPERATURE (oC) 25 75 50 150 125 100 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER 1.2 1 0.5 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE 10-2 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-247 1 10 IRF820 Typical Performance Curves Unless Otherwise Specified (Continued) 5 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10 10µs 100µs 1 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 VGS = 6.0V 3 VGS = 5.5V 2 VGS = 5.0V 1 10ms 0 103 0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4 VGS = 6.0V 3 VGS = 5.5V 2 VGS = 5.0V VGS = 4.0V TJ = 150oC 16 8 12 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 10-2 0 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 8 VGS = 10V 6 VGS = 20V 4 2 2.4 8 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-248 10 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 2.5A 1.8 1.2 0.6 0 4 6 ID, DRAIN CURRENT (A) 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2 TJ = 25oC 0.1 10 0 250 1 FIGURE 6. SATURATION CHARACTERISTICS 0 200 VGS = 4.5V 0 0 150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS ≥ 50V VGS = 10V 1 100 FIGURE 5. OUTPUT CHARACTERISTICS 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 5 VGS = 4.0V VGS = 4.5V DC 10 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRF820 Typical Performance Curves Unless Otherwise Specified (Continued) 1000 1.25 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD 800 COSS ≈ CDS + CGD 1.15 C, CAPACITANCE (nF) NORMALIZED DRAIN TO SOURCE BREAKDOWNVOLTAGE ID = 250µA 1.05 0.95 600 CISS 400 COSS 0.85 200 CRSS 0.75 -40 0 80 40 120 0 160 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 100 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3.2 TJ = 25oC 2.4 TJ = 150oC 1.6 0.8 0.8 1.6 2.4 ID, DRAIN CURRENT (A) 3.2 4.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10 TJ = 25oC TJ = 150oC 1 0.1 0 VGS, GATE TO SOURCEVOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 4.0 0 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 2.5A 16 IRF820, IRF822 VDS = 400V VDS = 250V VDS = 100V 12 8 4 0 0 4 8 12 16 20 Qg , GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-249 100 2.0 IRF820 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-250 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF820 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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