INTERFET 2N6452

Databook.fxp 1/13/99 2:09 PM Page B-25
B-25
01/99
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
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At 25°C free air temperature:
2N6451
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Min
V(BR)GSS
Max
– 20
2N6452
Min
Max
– 25
– 0.1
Gate Reverse Current
– 0.5
IGSS
– 0.2
–1
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
– 0.5 – 3.5 – 0.5 – 3.5
2N6451
2N6452
– 20 V
– 25 V
– 20 V
– 25 V
10 mA
10 mA
360 mW
360 mW
2.88 mW/°C 2.88 mW/°C
Process NJ132L
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
nA
VGS = – 10V, VDS = ØV
nA
VGS = – 15V, VDS = ØV
µA
VGS = – 10V, VDS = ØV
TA = 125°C
µA
VGS = – 15V, VDS = ØV
TA = 125°C
V
VDS = 10V, ID = 0.5 nA
5
20
5
20
mA
VDS = 10V, VGS = ØV
15
30
15
30
mS
VDS = 10V, ID = 5 mA
f = 1 kHz
mS
VDS = 10V, ID = 15 mA
f = 1 kHz
µS
VDS = 10V, ID = 5 mA
f = 1 kHz
µS
VDS = 10V, ID = 15 mA
f = 1 kHz
pF
VDS = 10V, ID = 5 mA
f = 1 kHz
pF
VDS = 10V, ID = 15 mA
f = 1 kHz
pF
VDS = 10V, ID = 5 mA
f = 1 kHz
pF
VDS = 10V, ID = 15 mA
f = 1 kHz
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
| Yfs |
Common Source
Output Conductance
| Yos |
Common Source
Input Capacitance
Ciss
Common Source Reverse
Transfer Capacitance
Crss
Equivalent Short Circuit
Input Noise Voltage
e¯ N
Noise Figure
NF
50
25
5
25
5
5
10 nV/√Hz
VDS = 10V, ID = 5 mA
f = 10 kHz
3
8
nV/√Hz
VDS = 10V, ID = 5 mA
f = 1 kHz
1.5
2.5
dB
VDS = 10V, ID = 5 mA
RG = 10 kΩ
f = 10 Hz
TOÐ72 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate, 4 Case
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