2N4117, 2N4117A

Databook.fxp 1/13/99 2:09 PM Page B-9
B-9
01/99
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Audio Amplifiers
¥ Ultra-High Input Impedance
Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
2N4117
2N4117A
At 25°C free air temperature:
Static Electrical Characteristics
Min
Max
– 40
2N4118
2N4118A
Min
Max
Gate Source Breakdown Voltage
V(BR)GSS
– 40
Gate Reverse Current
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
– 0.6
– 1.8
–1
–3
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
IGSS
0.03
0.09
0.08
0.015
0.09
70
210
2N4119
2N4119A
Min
Max
– 40
– 40 V
50 mA
300 mW
2 mW/°C
Process NJ01
Unit
Test Conditions
V
IG = – 1µA, VDS = ØV
– 10
– 10
– 10
pA
VGS = – 20V, VDS = ØV
–1
–1
–1
pA
VGS = – 20V, VDS = ØV
–2
–6
V
VDS = 10V, ID = 1 nA
0.24
0.2
0.6
mA
VDS = 10V, VGS = ØV
0.08
0.24
0.2
0.6
mA
VDS = 10V, VGS = ØV
80
250
100
330
µS
VDS = 10V, VGS = ØV
f = 1 kHz
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
gfs
Common Source Output Conductance
gos
3
5
10
µS
VDS = 10V, VGS = ØV
f = 1 kHz
Common Source Input Capacitance
Ciss
3
3
3
pF
VDS = 10V, VGS = ØV
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
1.5
1.5
1.5
pF
VDS = 10V, VGS = ØV
f = 1 MHz
TOÐ72 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate, 4 Case
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