Databook.fxp 1/13/99 2:09 PM Page B-56 B-56 01/99 J210, J211 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J210 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J211 Max – 25 Min Typ Process NJ26L Max Unit V IG = – 1µA, VDS = ØV – 100 pA VGS = – 15V, VDS = ØV – 25 – 100 – 10 – 25 V 10 mA 360 mW 3.27 mW/°C – 10 Test Conditions pA VDS = 20V, ID = 1 mA –1 –3 – 2.5 – 4.5 V VDS = 15V, ID = 1 nA IDSS 2 15 7 20 mA VDS = 15V, VGS = ØV Common Source Forward Transconductance g fs 4000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz Common Source Output Conductance g os 200 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 10 10 nV/√Hz VDS = 15V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics 12000 6000 150 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ210, SMPJ211 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com