PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS(on) = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR EAR EAS TC TC TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C = 25°C 42 250 60 40 1.0 A A A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω 10 V/ns PD TC = 25°C 120 W -55 ... +175 175 -55 ... +150 °C °C °C 300 11...65/2.4...11 °C N/lb TJ TJM Tstg TL FC 1.6 mm (0.062 in.) from case for 10 s Mounting force VISOL 50/60 Hz, 1 minute Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) ~V 3 g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 150 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 48 A, Note 1 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 2500 TJ = 150 °C V 5.0 V ±100 nA 25 300 μA μA 26 mΩ G D S Isolated back surface* G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI) DS99240E(03/06) IXFC 96N15P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 48 A, Note 1 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 S 3500 pF 1000 pF 280 pF Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 48 A 33 ns td(off) RG = 4 Ω (External) 66 ns 18 ns 110 nC 26 nC 59 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 48 A Qgd RthJC RthCS ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.25 K/W (TO-247, PLUS220) Source-Drain Diode 0.21 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25 A 200 ns QRM -di/dt = 100 A/μs IRM VR = 100 V, VGS = 0 V 600 nC 6 A Ref: IXYS CO 0177 R0 Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 96N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 100 VGS = 10V 9V 90 VGS = 10V 175 80 150 9V I D - Amperes I D - Amperes 70 60 8V 50 40 7V 30 125 100 8V 75 50 7V 20 25 6V 10 0 6V 0 0 0.5 1 1.5 2 0 2.5 2 4 6 Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 2.8 VGS = 10V 9V 90 2.6 VGS = 10V 2.4 R D S ( o n ) - Normalized 80 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID =ID25 48 A Value vs. Junction Tem perature 100 70 60 8V 50 40 7V 30 6V 20 10 2.2 2 1.8 I D = 96A 1.6 I D = 48A 1.4 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 5.5 -25 0 V D S - Volts 7040 6035 Amperes IIDD -- Amperes TJ = 175ºC 2.6 VGS = 10V 2.2 1.8 TJ = 25ºC VGS = 15V 1.4 75 100 125 150 175 8045 3.4 3 50 Fig. Fig. 6. Drain Current vs. Case Tem perature ID =0.5 48IA D25 Value vs. ID 3.8 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to R D S ( o n ) - Normalized 8 V D S - Volts V D S - Volts External Lead Current Limit 30 50 25 40 20 30 15 20 10 10 5 1 0.6 0 50 100 150 I D - Amperes © 2006 IXYS All rights reserved 200 250 0 0 -50 -50 -25 -25 00 25 25 50 50 75 75 100 100 125 125 150 150 TT CC- -Degrees DegreesCentigrade Centigrade 175 175 IXFC 96N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 180 140 50 120 g f s - Siemens I D - Amperes TJ = -40ºC 25ºC 150ºC 60 160 100 80 60 40 30 20 TJ = 150ºC 25ºC -40ºC 40 20 10 0 0 4 5 6 7 8 9 10 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 125 150 175 200 Fig. 10. Gate Charge 10 300 250 9 VDS = 75V 8 I D = 48A I G = 10mA 7 200 VG S - Volts I S - Amperes 100 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 V S D - Volts 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. ard-Bias Fig .12. 1 2.Forw Fo r w ar d - Bia s Safe Area Saf eOperating Op e r at in g Are a Fig. 11. Capacitance 10000 11000 000 R DS(on) Limit R D S (o n ) L im it C iss I IDD--Amperes Amperes Capacitance - picoFarads f = 1MHz 1000 C oss 25µs 2 5 µs 100 1 00 100µs 1 0 0 µs 1ms 1m s 10ms 10 1 0 DC TJ = 175ºC T J = 1 7 5 ºC TC = 25ºC T C = 2 5 ºC C rss 100 10m s DC 1 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 1 10 10 100 V D S - Volts 1 0 0 V D S - V olts 1000 1000 IXFC 96N15P Fig. 13. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2006 IXYS All rights reserved 100 1000