VWI 20-06P1 IC25 = 19 A = 600 V VCES VCE(sat) typ. = 1.9 V IGBT Module Sixpack in ECO-PAC 2 S9 Preliminary data K 12 N9 X 18 L9 N5 A1 NTC J 13 R5 W 14 C1 A5 D5 H5 K 10 Pin arangement see outlines F3 G1 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 600 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 19 14 A A ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 20 A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 73 W Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.35 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VCES 1.9 2.2 4.5 2.4 V V 6.5 V 0.6 mA mA 100 nA 2.7 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω 35 35 230 30 0.4 0.3 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A 600 39 pF nC RthJC RthJH (per IGBT) 3.4 1.7 K/W K/W with heatsink compound (0.42 K/m.K; 50 µm) • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGE = 0 V; TVJ = 25°C TVJ = 125°C • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • AC drives • power supplies with power factor correction 308 Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-5 www.ixys.net IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 VWI 20-06P1 Dimensions in mm (1 mm = 0.0394") Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 21 14 Symbol Conditions Characteristic Values min. typ. max. VF IF = 10 A; TVJ = 25°C TVJ = 125°C 1.9 1.4 IRM t rr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 11 80 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7.0 3.5 K/W K/W A A 2.1 V V Data according to IEC 60747 and refer to a single diode unless otherwise stated. Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Component Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved mm mm 24 g 308 Symbol 2-5 VWI 20-06P1 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 308 IGBT 3-5 VWI 20-06P1 IGBT Transient thermal resistance junction to heatsink 10 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 (ZthJH is measured using 50 µm thermal grease) IGBT ZthJH [K/W] 0.1 0.01 0.001 100 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 308 t (s) 4-5 VWI 20-06P1 Diode 30 1.4 T = 100°C nC VJ V = 300V 1.2 R A 25 IF TVJ=150°C TVJ=100°C TVJ= 25°C 20 15 40 TVJ= 100°C A VR = 300V 1.0 Qr IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 0 A/µs 1000 -diF/dt VF Forward current IF versus VF 0 200 Reverse recovery charge Qr versus -diF/dt 120 2.0 20 trr 1.5 1.0 90 IRM 80 0.5 0.9 10 0.6 5 0.3 Qr TVJ= 100°C IF = 10A 70 0.0 0 0 40 80 120 °C 160 0 200 400 TVJ 600 800 1000 A/µs 0 -diF/dt Dynamic parameters Qr, IRM versus TVJ µs VFR tfr tfr IF= 20A IF= 10A IF= 5A 100 1.2 V VFR 15 110 Kf 600 A/µs 800 1000 -diF/dt Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 400 Recovery time trr versus -diF/dt 200 400 8-06A 0.0 600 A/µs 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 Fred ZthJH[K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.001 0.0001 0.001 0.01 t(s) 0.1 1 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 10 100 308 0.00001 5-5