MWI 80-12 T6K Advanced Technical Information IC25 = 80 A = 1200 V VCES VCE(sat) typ. = 2.0 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 Features Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 18 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH tSC VCE = 900 V; VGE = ±15 V; RG = 18 Ω; TVJ = 125°C SCSOA; non-repetitive Ptot TC = 25°C Symbol Conditions IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; td(on) tr td(off) tf Eon Eoff V ± 20 V 80 56 A A 100 VCES A 10 µs 270 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IGES 1200 2.0 2.3 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.4 V V 6.5 V 1 mA mA 400 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 18 Ω 90 50 520 90 5 6.5 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A 3600 470 pF nC RthJC RthCH (per IGBT) 0.2 0.46 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved • Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications • AC drives • power supplies with power factor correction 502 IGBTs 1-2 Advanced Technical Information Diodes MWI 80-12 T6K Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.6 IRM trr IF = 50 A; diF/dt = -600 A/µs; TVJ = 100°C VR = 600 V; VGE = 0 V 35 200 A ns RthJC RthCH (per diode) 0.25 0.65 K/W K/W 80 51 Conduction A A Characteristic Values min. typ. max. 2.6 V V IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = tbd; R0 = tbd Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.5 V; R0 = 6 mΩ Thermal Response Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/85 T = 25°C 4.45 4.7 3510 5.0 kΩ K Module Symbol Conditions TVJ TVJM Tstg operating VISOL Maximum Ratings -40...+125 -40...+150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M4) 2.0 - 2.2 Nm Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface Strike distance in air 12.7 12.7 Free Wheeling Diode (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W Dimensions in mm (1 mm = 0.0394") mm mm 40 g 502 Weight IGBT (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W © 2005 IXYS All rights reserved 2-2