MIO 1200-33E11 Advanced Technical Information IC80 = 1200 A = 3300 V VCES VCE(sat) typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200 A ICM tp = 1 ms; TC = 80°C 2400 A tSC VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C 10 µs Typical Applications Symbol Conditions VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C 120 mA IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA Eon Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1800V; IC = 1200A; RG = 1Ω; Lσ = 100nH Eoff • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.1 3.8 6 RthJC • AC power converters for - industrial drives - windmills - traction • LASER pulse generator V V 8 V 1750 mJ 2000 mJ 0.0085 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 405 ① Collector emitter saturation voltage is given at chip level 1-3 Advanced Technical Information MIO 1200-33E11 Diode Symbol Conditions Maximum Ratings IF80 TC = 80°C IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave Symbol Conditions VF ② IF = 1200 A; IRM trr QRR Erec VCC = 1800 V; IC = 1200 A; VGE = ±15 V; RG = 1 Ω; TVJ = 125°C Inductive load; Lσ = 100nH 1200 A 12000 A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C 2.30 2.35 V V 1680 800 1320 1740 A ns µC mJ RthJC 0.017 K/W ② Forward voltage is given at chip level Module Symbol Conditions Maximum Ratings TJM TVJ Tstg max junction temperature Operatingtemperature Storage temperature Md Mounting torque Symbol Conditions dA Clearance distance terminal to base terminal to terminal 26 26 mm mm dS Surface creepage distance terminal to base terminal to terminal 56 56 mm mm VISOL 1 min, f = 50 Hz 10500 V~ VE Partial discharge extinction voltage f = 50 Hz, QPD ≤ 10pC 5100 V +125 -40...+125 -40...+125 °C °C °C 4-6 8 - 10 Nm Nm Base-heatsink, M6 screws Main terminals, M8 screws Characteristic Values min. typ. max. CTI Comperative tracking index Lσ Module stray inductance, C to E terminal Rterm-chip * Resistance terminal to chip RthCH per module; λ grease = 1 W/m•K Weight 600 18 nH 0.12 mΩ 0.006 K/W 1500 g 405 *) V = VCE(sat) + Rterm-chip · IC resp. V = VF + Rterm-chip · IF 2-3 © 2004 IXYS All rights reserved Advanced Technical Information MIO 1200-33E11 Outline drawing 405 Note: all dimensions are shown in mm © 2004 IXYS All rights reserved 3-3