KTK211 SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). : |yfs| =9mS(Typ.) H Extremely Low Reverse Transfer Capacitance. 3 G A 2 D High Forward Transfer Admittance. 1 : Crss=0.1pF(Typ.) J ) M K MAXIMUM RATING (Ta=25 P N C P CHARACTERISTIC SYMBOL RATING UNIT VGDO -18 V Gate Current IG 10 mA Drain Power Dissipation PD 150 mW Junction Temperature Tj 150 Tstg -55 150 Gate-Drain Voltage Storage Temperature Range MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. GATE 2. DRAIN 3. SOURCE SOT-23 Marking I DSS Rank K Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. ) SYMBOL MIN. TYP. MAX. UNIT - - -10 nA IG=-100 A -18 - - V IDSS (Note) VGS=0, VDS=10V 1.0 - 15 mA Gate-Source Cut-off Voltage VGS(OFF) VDS=10V, ID=1 A -0.4 - -4.0 V Foward Transfer Admittance |yfs| VDS=10V, VGS=0, f=1kHz - 9 - mS Reverse Transfer Capacitance Crss VGD=-10V, f=1MHz - 0.10 0.15 pF Power Gain GPS VDD=10V, f=100MHz (Fig.) - 18 - dB Noise Figure NF VDD=10V, f=100MHz (Fig.) - 2.5 3.5 dB IGSS Gate Leakage Current V(BR)GDO Gate-Drain Breakdown Voltage Drain Current Note : IDSS Classification 2003. 2. 25 TEST CONDITION VGS=-0.5V, VDS=0 O:1.0 3.0, Y:2.5 6.0, GR(G):5.0 10.0, BL(B):9.0 15.0 Revision No : 2 1/3 KTK211 Fig. 100MHz GPS, NF TEST CIRCUIT S G 10pF OUTPUT RL=50Ω 20pF 0.005µF 20pF R g =50Ω 10pF D INPUT L1 L2 RS 0.005µF VDD L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH. L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH. KTK211 is measured at each group by changing RS. GROUP RS( KTK211 - O 2003. 2. 25 ) 0 KTK211 - Y 18 5% KTK211 - GR 100 5% KTK211 - BL 200 5% Revision No : 2 2/3 KTK211 y fs , yrs - f 50 30 30 FORWARD REVERSE TRANSFER ADMITTANCE yfs , y rs (mS) INPUT,OUTPUT ADMITTANCE y is , y os (mS) y is , y os - f 10 b is 5 3 b os 1 COMMON SOURCE VDS =10V VGS =0 Ta=25 C g is 0.5 0.3 g os 0.1 10 30 100 300 1k 3k 10k 10 5 3 b fs 1 0.5 0.3 0.1 10 30 100 OUTPUT ADMITTANCE yos (mS) INPUT ADMITTANCE y is (mS) COMMON I DS =5mA(I DSS) 2 SOURCE f=100MHz Ta=25 C 0.5 1 I DS =5mA(I DSS ) g is 0.5 0.3 0.1 2 4 6 8 0.5 10 12 14 1k 3k 5k y os - VDS 10 3 300 FREQUENCY f (MHz) y is - V DS b is g rs b rs FREQUENCY f (MHz) 5 COMMON SOURCE VDS =10V VGS =0 Ta=25 C g fs 16 18 20 22 10 5 3 b os COMMON SOURCE I DS =5mA(I DSS ) f=100MHz 2 1 0.5 0.3 g os Ta=25 C 0.5 I DS =5mA(I DSS ) 0.1 2 0.05 0.5 0.02 4 6 8 10 12 14 16 18 20 22 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) FORWARD TRANSFER ADMITTANCE y fs (mS) y fs - V DS 30 COMMON SOURCE f=100MHz Ta=25 C 10 (I DSS ) I DS =5mA g fs 2 5 0.5 3 -b fs (I DSS) I DS =5mA 2 1 0.5 0.5 4 6 8 10 12 14 16 DRAIN-SOURCE VOLTAGE V DS (V) 2003. 2. 25 Revision No : 2 3/3