NEC 2SA1714K

DATA SHEET
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1714 is a high-speed darlington power transistor. This
PACKAGE DRAWING (UNIT: mm)
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
• High DC current amplifiers due to darlington connection
• Large current capacitance and low VCE(sat)
• TO-126 power transistor with high power dissipation
• Complementary transistor with 2SC4342
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−8.0
V
IC(DC)
–
+3.0
A
IC(pulse)*
–
+6.0
A
IB(DC)
−0.3
A
Total power dissipation
PT (Ta = 25°C)
1.3
W
Total power dissipation
PT (Tc = 25°C)
12
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (DC)
Collector current (pulse)
Base current (DC)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1714
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Collector to emitter voltage
VCEO(SUS)
Conditions
MIN.
IC = −3.0 A, IB = −3.0 mA, L = 1.0 mH
TYP.
−100
Unit
V
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−10
µA
Collector cutoff current
ICEO
VCE = −100 V, RBE = ∞
−10
µA
20,000
−
DC current gain
hFE1**
VCE = −2.0 V, IC = −1.5 A
2,000
DC current gain
hFE2**
VCE = −2.0 V, IC = −3.0 A
1,000
Collector saturation voltage
VCE(sat)**
IC = −1.5 A, IB = −1.5 mA
−0.9
−1.2
V
Base saturation voltage
VBE(sat)**
IC = −1.5 A, IB = −1.5 mA
−1.5
−2.0
V
IC = −1.5 A, IB1 = −IB2 = −1.5 mA,
RL = 33 Ω, VCC ≅ −50 V
0.15
µs
1.2
µs
0.6
µs
Turn-on time
ton
Storage time
tstg
−
Refer to the test circuit.
Fall time
tf
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
MAX.
Data Sheet D16124EJ1V0DS
2SA1714
TYPICAL CHARACTERISTICS (Ta = 25°°C)
With infinite heatsink
Without heatsink
Data Sheet D16124EJ1V0DS
3
2SA1714
4
Data Sheet D16124EJ1V0DS
2SA1714
[MEMO]
Data Sheet D16124EJ1V0DS
5
2SA1714
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4