NEC 2SC4815

DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High hFE and low VCE(sat):
VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE ≥ 100
@VCE = 2.0 V, IC = 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
IC(pulse)*
10
A
IB(DC)
2.5
A
Total power dissipation
PT
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4815
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 5.0 A, IB = 0.5 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC = 2.5 A, IB1 = −IB2 = 0.25 A
VBE(OFF) = −1.5 V, L = 180 µH, Clamped
60
V
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0
10
µA
DC current gain
hFE1*
VCE = 2.0 V, IC = 0.5 A
100
DC current gain
hFE2*
VCE = 2.0 V, IC = 1.0 A
100
DC current gain
hFE3*
VCE = 2.0 V, IC = 3.0 A
60
Collector saturation voltage
VCE(sat)1*
Collector saturation voltage
200
400
IC = 3.0 A, IB = 0.15 A
0.15
0.3
V
VCE(sat)2*
IC = 4.0 A, IB = 0.2 A
0.3
0.5
V
Base saturation voltage
VBE(sat)1*
IC = 3.0 A, IB = 0.15 A
0.9
1.2
V
Base saturation voltage
VBE(sat)2*
IC = 4.0 A, IB = 0.2 A
1.2
1.5
V
VCB = 10 V, IE = 0 , f = 1.0 MHz
70
pF
Collector capacitance
Cob
Gain bandwidth product
fT
VCE = 10 V, IC = 0.5 A
150
MHz
Turn-on time
ton
0.1
µs
Storage time
tstg
IC = 3.0 A, RL = 17 Ω,
IB1 = −IB2 = 0.15 A, VCC ≅ 50 V
1.0
µs
0.25
µs
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
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Data Sheet D15605EJ3V0DS
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2SC4815
• The information in this document is current as of July, 2001. The information is subject to change
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