DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. PART NUMBER PACKAGE 2SK3668-ZK TO-263 (MP-25ZK) (TO-263) FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 400 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±10 A ID(pulse) ±34 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 100 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 10 A ★ Single Avalanche Energy Note2 EAS 8 mJ Storage Temperature ★ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistane Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16547EJ2V0DS00 (2nd edition) Date Published April 2003 NS CP(K) Printed in Japan The mark ★ shows major revised points. 2002 2SK3668 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 5.0 A 3.0 RDS(on) VGS = 10 V, ID = 5.0 A 0.40 Gate Cut-off Voltage Note ★ Forward Transfer Admittance ★ Drain to Source On-state Resistance Note 5.6 S Ω 0.55 Input Capacitance Ciss VDS = 10 V 1320 pF Output Capacitance Coss VGS = 0 V 230 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 13 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 5.0 A 18 ns tr VGS = 10 V 8 ns td(off) RG = 10 Ω 44 ns 4 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 320 V 26 nC Gate to Source Charge QGS VGS = 10 V 7 nC QGD ID = 10 A 11 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 10 A, VGS = 0 V 0.90 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 350 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 2.7 µC Note Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D16547EJ2V0DS tr td(off) td(on) ton tf toff 2SK3668 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C ★ FORWARD BIAS SAFE OPERATING AREA 100 10 10 ms 100 ms RDS(on) Limited (at VGS = 10 V) DC 1 Power Dissipation Limited 0.1 TC = 25°C Single pulse 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V ★ TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 1 ms ID(DC) = 10 A Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 1.25°C/W 0.1 0.01 Single pulse Rth(ch-A): TA = 25°C Rth(ch-C): TC = 25°C 0.001 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D16547EJ2V0DS 10 100 1000 3 2SK3668 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 40 VDS = 10 V Pulsed VGS = 20 V 35 ID - Drain Current - A ID - Drain Current - A 10 30 10 V 25 20 15 1 T A = 150°C 125°C 75°C 25°C −25°C 0.1 0.01 10 0.001 5 Pulsed 0 0.0001 0 5 10 15 20 25 30 0 5 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V 4.0 VDS = 10 V ID = 1 mA 3.5 3.0 2.5 2.0 1.5 25 50 75 100 125 100 10 TA = 150°C 125°C 75°C 25°C −25°C 1 0.1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2 VGS = 10 V Pulsed 1.5 1 0.5 0 0.01 0.1 1 10 100 1 Pulsed 0.9 0.8 ID = 10 A 0.7 5.0 A 0.6 2.0 A 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 VDS = 10 V Pulsed 0.01 0.01 150 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 0 15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 25 10 VGS - Gate to Source Voltage - V Data Sheet D16547EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1.4 10000 VGS = 10 V Pulsed 1 ID = 10 A 0.8 5.0 A 0.6 0.4 0.2 Ciss 1000 100 Coss 10 0 - 25 0 25 50 75 100 125 1 0.01 150 SWITCHING CHARACTERISTICS 1 10 100 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 1000 V D D = 150 V V G S = 10 V R G = 10 Ω 100 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C t d(o ff) tf t d(o n) 10 tr 1 16 ID = 10 A 350 14 300 12 VDD = 320 V 200 V 100 V 250 10 200 8 VGS 150 6 100 4 VDS 50 2 0 0 0.1 1 10 0 0 100 5 10 15 20 25 30 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 trr - Reverse Recovery Time - ns Pulsed IF - Diode Forward Current - A Crss VGS = 0 f = 1.0 MHz VGS - Gate to Source Voltage - V 1.2 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 2SK3668 10 VGS = 10 V 1 0V 0.1 100 10 di/dt = 100 A/µs VGS = 0 V 1 0.01 0 0.5 1 1.5 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D16547EJ2V0DS 5 2SK3668 ★ SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = 150 V VGS = 20 → 0 V RG = 25 Ω Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 10 A 10 EAS = 8.0 mJ 1 6 80 60 40 20 0 0.1 100 µ VDD = 150 V RG = 25 Ω VGS = 20 → 0V IAS ≤ 10 A 1m 10 m 100 m L - Inductive Load - H 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16547EJ2V0DS 2SK3668 PACKAGE DRAWING (Unit: mm) 1.35±0.3 TO-263 (MP-25ZK) 4.45±0.2 1.3±0.2 0.025 to 0.25 0.5± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 8o 0.25 1 2 3 1.Gate 2.Drain 2.5 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D16547EJ2V0DS 7 2SK3668 • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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