DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3640 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE 2SK3640-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES (TO-252) • Low on-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Low Ciss: Ciss = 570 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±16 V Drain Current (DC) (TC = 25°C) ID(DC) ±19 A ID(pulse) ±76 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15968EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3640 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 9 A 3.7 RDS(on)1 VGS = 10 V, ID = 9 A 15 21 mΩ RDS(on)2 VGS = 4.5 V, ID = 9 A 24 40 mΩ Ciss VDS = 10 V 570 pF Coss VGS = 0 V 160 pF Reverse Transfer Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9 A 7.7 ns tr VGS = 10 V 4.7 ns td(off) RG = 10 Ω 24 ns 7 ns Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Rise Time Turn-off Delay Time Fall Time 7.4 tf S Total Gate Charge QG VDD = 24 V 14 nC Gate to Source Charge QGS VGS = 10 V 2.4 nC QGD ID = 19 A 4.3 nC VF(S-D) IF = 19 A, VGS = 0 V 0.95 V Reverse Recovery Time trr IF = 19 A, VGS = 0 V 21 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 12 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D15968EJ3V0DS td(on) ton tf toff 2SK3640 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 25 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 100 µs ID(DC) 10 R DS(on) Limited (at V GS = 10 V) 1 DC 1 ms Power Dissipation Limited 10 ms T C = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 10 µs ID(pulse) R th(ch-A ) = 125°C /W 100 10 R th(ch-C ) = 6.25°C /W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15968EJ3V0DS 3 2SK3640 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 80 VGS = 10 V ID - Drain Current - A ID - Drain Current - A 100 60 4.5 V 40 10 Tch = −55°C 25°C 75°C 150°C 1 0.1 20 VDS = 10 V Pulsed Pulsed 0 0.01 0 1 2 3 3 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE V DS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 -50 0 50 100 100 Tch = −55°C 25°C 75°C 150°C 10 1 VDS = 10 V Pulsed 0.1 150 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 VGS = 4.5 V 20 10 V 10 0 0.1 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 2 VGS - Gate to Source Voltage - V 0 RDS(on) - Drain to Source On-state Resistance - mΩ 1 VDS - Drain to Source Voltage - V 3 4 0 50 Pulsed 40 30 20 ID = 9 A 10 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D15968EJ3V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 40 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V 30 10 V 20 10 ID = 9 A Pulsed 0 -50 0 50 100 1000 C iss C oss 100 C rss 10 0.01 150 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V td(off) tr 100 12 25 10 VDD = 24 V 15 V 6V 20 8 15 6 VGS 10 4 5 2 VDS ID = 19 A 0 1 0.1 1 10 0 0 100 5 10 15 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on) 10 1 30 VDD = 15 V VGS = 10 V RG = 10 Ω tf 0.1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns V GS = 0 V f = 1 MHz VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3640 VGS = 10 V 100 10 0V 1 0.1 di/dt = 100 A/µs V GS = 0 V 100 10 Pulsed 1 0.01 0 0.5 1 1.5 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D15968EJ3V0DS 5 2SK3640 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 10 A 10 EAS = 10 mJ 1 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 10 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D15968EJ3V0DS 2SK3640 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 3 1.14 MAX. 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15968EJ3V0DS 7 2SK3640 • The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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