NEC 3SK252

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK252
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
(VDS = 3.5 V)
(Unit: mm)
NF1 = 2.0 dB TYP. (f = 470 MHz)
2
GPS = 19.0 dB TYP. (f = 470 MHz)
V
Gate2 to Source Voltage
VG2S
±8*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200*2
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
(1.9)
0.95
0.85
5˚
5˚
5˚
0.16 +– 0.1
0.05
V
±8*1
0.4 +– 0.1
0.05
18
VG1S
1
VDSX
Gate1 to Source Voltage
0.6 +– 0.1
0.05
Drain to Source Voltage
0.8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
(1.8)
4 Pins Mini Mold
:
1.1 +– 0.2
0.1
Embossed Type Taping
• Package
2.9 ± 0.2
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting :
1.5 +– 0.2
0.1
3
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain :
2.8 +– 0.2
0.3
0.4 +– 0.1
0.05
• Low Noise Figure :
0.4 +– 0.1
0.05
• Driving Battery
4
:
0~0.1
• Low VDD Use
5˚
PIN CONNECTIONS
*1: RL ≥ 10 kΩ
*2: Free air
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10582EJ2V0DS00 (2nd edition)
(Previous No. TD-2373)
Date Published August 1995 P
Printed in Japan
©
1993
3SK252
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
Drain to Source Breakdown Voltage
BVDSX
18
Drain Current
IDSX
0.1
Gate1 to Source Cutoff Voltage
VG1S(off)
–1.0
Gate2 to Source Cutoff Voltage
VG2S(off)
0
Gate1 Reverse Current
TYP.
MAX.
V
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
5.0
mA
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
0
+1.0
V
VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
0.5
1.0
V
VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
IG1SS
±20
nA
VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current
IG2SS
±20
nA
VDS = 0, VG1S = 0, VG2S = ±6 V
Forward Transfer Admittance
|yfs|
14
18
23
mS
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 kHz
Input Capacitance
Ciss
2.4
2.9
3.4
pF
Output Capacitance
Coss
0.9
1.2
1.5
pF
Reverse Transfer Capacitance
Crss
0.01
0.03
pF
Power Gain
Gps
19
22
dB
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure 1
NF1
2.0
3.0
dB
f = 470 MHz
Noise Figure 2
NF2
0.8
2.3
dB
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 55 MHz
16
IDSX Classification
Rank
2
UNIT
U1E/UAE*
Marking
U1E
IDSX (mA)
0.1 to 5.0
* Old Specification / New Specification
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 MHz
3SK252
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
200
100
20
1.4 V
15
1.2 V
1.0 V
10
0.8 V
5
0.6 V
25
50
75
100
10
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VDS = 3.5 V
3.0 V
VG2S = 3.5 V
2.5 V
2.0 V
15
10
1.5 V
5
1.0 V
0.5
1.0
1.5
2.0
2.5
40
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
3.0 V
16
2.0 V
2.5 V
8
1.0 V
0
0.5
1.5 V
1.0
1.5
2.0
VG1S – Gate1 to Source Voltage – V
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
40
2.5
5.0
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
3.0 V
16
2.5 V
8
2.0 V
1.5 V
1.0 V
0
5
VDS – Drain to Source Voltage – V
20
0
0
125
TA – Ambient Temperature – °C
|yfs| – Forward Transfer Admittance – mS
25
ID – Drain Current – mA
ID – Drain Current – mA
300
0
|yfs| – Forward Transfer Admittance – mS
VG2S = 3 V
VG1S = 1.6 V
Ciss – Input Capacitance – pF
PD – Total Power Dissipation – mW
400
4
8
12
ID – Drain Current – mA
16
20
4.0
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3 V)
f = 1 MHz
3.0
2.0
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V
3
3SK252
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
2.0
1.5
1.0
0.5
5
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3.0 V)
f = 470 MHz
GPS
10
0
–10
NF
–20
0
–1.0
0
1.0
2.0
3.0
VG2S – Gate2 to Source Voltage – V
4
20
GPS – Power Gain – dB
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3.0 V)
f = 1 MHz
NF – Noise Figure – dB
Coss – Output Capacitance – pF
2.5
4.0
0
–1.0
0
1.0
2.0
3.0
VG2S – Gate2 to Source Voltage – V
4.0
3SK252
GPS AND NF TEST CIRCUIT AT f = 470 MHz
VG2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
INPUT 40 pF
40 pF
L2
OUTPUT
L1
50 Ω
1 000 pF
1 000 pF
15 pF
15 pF
50 Ω
22 kΩ
L3
1 000 pF
1 000 pF
L1 : φ 1.2 mm U.E.W φ 5 mm 1T
L2 : φ1.2 mm U.E.W φ 5 mm 1T
L3 : REC 2.2 µ H
VDS
VG1S
NF TEST CIRCUIT AT f = 55 MHz
VG2S
VDS
RFC
2.2 kΩ
Ferrite Beads
1 500 pF
1 500 pF
1 000 pF
INPUT
50 Ω
27 pF
3.3
kΩ
47 kΩ
47 kΩ
1 000 pF
27 pF
OUTPUT
3.3 kΩ
50 Ω
VG1S
5
3SK252
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document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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