ETC NE685M13

NEC's NPN SILICON TRANSISTOR NE685M13
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
2
1
(Bottom View)
0.5+0.1
ñ0.05
0.3
3
0.2+0.1
ñ0.05
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
0.35
•
1.0+0.1
ñ0.05
HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
0.7±0.05
Y2
•
0.15+0.1
ñ0.05
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
0.7
•
0.35
FEATURES
0.1
0.125+0.1
ñ0.05
0.1
0.5±0.05
NEC's NE685M13 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.15+0.1
ñ0.05
DESCRIPTION
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE685M13
2SC5617
M13
UNITS
fT
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
NF
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT
dB
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
|S21E|2
MIN
GHz
hFE2
Forward Current Gain at VCE = 3 V, IC = 10 mA
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
TYP
MAX
12.0
1.5
7.0
2.5
11.0
75
140
0.1
0.1
0.4
0.7
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE685M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
6.0
VEBO
Emitter to Base Voltage
V
2.0
Collector Current
mA
30
PT2
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
IC
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE685M13-T3
3k pcs./reel
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy
PCB.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Total Power Dissipation, Ptot (mW)
300
Mounted on Glass Epoxy PCB
2
(1.08 cm X 1.0 mm (t) )
250
200
150
140
100
50
0
25
50
75
100
125
Reverse Transfer Capacitance, Cre (pF)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
Ambient Temperature, TA (ºC)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT VS.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
30
40
25
Collector Current, IC (mA)
Collector Current, IC (mA)
VCE = 3 V
20
15
10
300 µA
270 µA
240 µA
210 µ A
30
20
180 µA
150 µA
120 µ A
90 µA
60 µA
10
5
0
0.2
0.4
0.6
0.8
Base to Emitter Voltage, TBE (V)
1.0
0
2
4
IB = 30 µA
6
Collector to Emitter Voltage, VCE (V)
8
NE685M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
16
1 000
Gain Bandwidth Product, fT (GHz)
100
10
0.1
1
10
10
8
6
4
2
10
100
Collector Current, IC (mA)
INSERTION POWER GAIN VS.
FREQUENCY
INSERTION POWER GAIN VS.
FREQUENCY
VCE = 1 V
IC = 10 mA
30
25
20
15
10
5
0
0.1
1
35
Insertion Power Gain |S21e|2, (dB)
Insertion Power Gain |S21e|2, (dB)
12
Collector Current, IC (mA)
35
VCE = 3 V
IC = 10 mA
30
25
20
15
10
5
0
0.1
10
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
14
VCE = 3 V
f = 2 GHz
0
1
100
VCE = 1 V
f = 1 GHz
20
MSG
MAG
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
DC Current Gain, hFE
VCE = 3 V
15
2
|S21e|
10
5
0
1
10
Collector Current, IC (mA)
100
VCE = 3 V MSG
f = 1 GHz
15
MAG
|S21e|2
10
5
0
1
10
Collector Current, IC (mA)
100
NE685M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
MSG
MAG
10
|S21e|2
5
10
VCE = 3 V
f = 2 GHz
15
10
|S21e|2
5
0
1
100
MAG
MSG
10
100
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 1 V
f = 1 GHz
16
4
Ga
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 3 V
Ga
f = 1 GHz
12
3
2
NF
4
1
0
1
8
10
Collector Current, IC (mA)
0
100
Noise Figure NF, (dB)
Collector Current, IC (mA)
4
16
3
12
8
2
NF
4
1
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
15
0
1
Noise Figure NF, (dB)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
VCE = 1 V
f = 2 GHz
Associated Gain, Ga (dB)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
NE685M13
Ga
8
2
NF
4
1
0
1
10
Collector Current, IC (mA)
0
100
VCE = 3 V
f = 2 GHz
16
4
Ga
3
2
NF
8
4
1
0
1
12
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
12
3
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
Noise Figure NF, (dB)
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 1 V
f = 2 GHz
16
4
Associated Gain, Ga (dB)
Noise Figure NF, (dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE685M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+135º
+45º
j10
S11
0
10
25
S11
50
+180º
100
S21
2
4
6
8 10 12
+0º
S22
-j10
-135º
-j25
-45º
-j100
-90º
-j50
NE685M13
VC = 2 V, IC = 5 mA
FREQUENCY
S11
S21
GHz
MAG
ANG
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.200
3.400
3.600
3.800
4.000
0.879
0.854
0.813
0.764
0.677
0.634
0.597
0.560
0.530
0.501
0.478
0.459
0.425
0.399
0.379
0.364
0.350
0.339
0.330
0.321
0.312
0.306
0.301
0.296
0.291
0.286
-11.18
-24.79
-36.17
-46.95
-58.07
-67.22
-75.01
-82.74
-89.38
-95.62
-101.10
-106.13
-114.91
-122.59
-129.37
-135.19
-140.57
-145.78
-150.79
-155.59
-160.44
-165.34
-170.19
-175.11
-179.68
176.05
10.895
10.531
9.980
9.356
8.645
7.952
7.355
6.818
6.315
5.872
5.483
5.137
4.543
4.068
3.678
3.369
3.103
2.882
2.695
2.529
2.386
2.263
2.150
2.048
1.957
1.874
S12
S22
ANG
MAG
ANG
MAG
ANG
169.79
159.27
150.16
142.00
133.16
127.18
122.04
117.17
113.03
109.14
105.72
102.65
97.14
92.39
88.20
84.36
80.91
77.59
74.45
71.46
68.56
65.81
63.12
60.52
58.06
55.66
0.017
0.033
0.047
0.059
0.069
0.077
0.083
0.089
0.095
0.099
0.104
0.108
0.116
0.123
0.131
0.138
0.146
0.154
0.162
0.170
0.178
0.186
0.194
0.202
0.210
0.218
85.46
76.47
70.32
65.55
59.99
57.31
55.43
53.53
52.58
51.55
50.81
50.49
50.07
50.09
50.25
50.70
51.06
51.17
51.40
51.61
51.67
51.55
51.53
51.43
51.16
51.06
0.980
0.943
0.894
0.843
0.756
0.701
0.657
0.615
0.579
0.542
0.515
0.491
0.451
0.417
0.394
0.377
0.362
0.351
0.343
0.335
0.328
0.324
0.323
0.323
0.327
0.332
-8.26
-15.79
-22.51
-28.26
-32.30
-35.05
-38.07
-40.74
-42.38
-44.09
-45.60
-47.11
-49.16
-50.64
-52.06
-53.48
-55.00
-56.70
-58.44
-60.35
-62.49
-65.12
-67.74
-70.53
-73.25
-75.87
K
MAG1
0.05
0.13
0.19
0.24
0.37
0.43
0.47
0.51
0.56
0.61
0.65
0.68
0.76
0.82
0.88
0.92
0.96
0.99
1.02
1.04
1.06
1.08
1.09
1.10
1.10
1.11
27.96
25.05
23.25
21.98
21.00
20.16
19.46
18.82
18.24
17.73
17.22
16.79
15.94
15.18
14.49
13.87
13.27
12.73
11.43
10.49
9.75
9.16
8.63
8.14
7.72
7.33
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE685M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+135º
+45º
j10
S12
S11
0
10
25
S21
100
50
5
+180º
10
15
20
+0º
S22
-j10
-135º
-j25
-45º
-j100
-90º
-j50
NE685M13
VC = 3 V, IC = 10 mA
FREQUENCY
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.200
3.400
3.600
3.800
4.000
0.830
0.791
0.734
0.675
0.584
0.541
0.506
0.473
0.448
0.423
0.405
0.390
0.364
0.344
0.329
0.318
0.308
0.300
0.294
0.287
0.282
0.277
0.273
0.270
0.266
0.263
-14.89
-30.25
-43.35
-55.24
-67.02
-76.48
-84.40
-92.17
-98.62
-104.84
-110.11
-114.95
-123.47
-130.71
-137.11
-142.56
-147.52
-152.37
-157.24
-161.72
-166.38
-170.99
-175.85
179.25
174.83
170.53
15.406
14.529
13.385
12.178
10.911
9.839
8.943
8.163
7.477
6.891
6.385
5.947
5.216
4.640
4.179
3.809
3.499
3.242
3.024
2.834
2.670
2.526
2.397
2.282
2.179
2.084
167.04
155.17
144.88
136.08
127.43
121.58
116.65
112.19
108.45
104.94
101.90
99.15
94.22
90.04
86.28
82.88
79.73
76.73
73.87
71.13
68.47
65.91
63.40
60.99
58.67
56.42
0.015
0.029
0.041
0.050
0.058
0.064
0.069
0.075
0.079
0.083
0.088
0.092
0.100
0.109
0.117
0.126
0.135
0.144
0.153
0.162
0.171
0.180
0.189
0.197
0.207
0.215
79.15
74.31
68.95
64.19
59.86
57.87
56.90
55.96
55.53
55.34
55.24
55.23
55.77
56.13
56.73
57.15
57.35
57.60
57.62
57.53
57.39
57.27
56.83
56.62
56.19
55.67
0.969
0.918
0.852
0.786
0.690
0.631
0.586
0.546
0.513
0.478
0.455
0.435
0.401
0.373
0.355
0.341
0.330
0.322
0.316
0.310
0.304
0.302
0.301
0.302
0.306
0.311
-9.82
-18.40
-25.66
-31.42
-34.94
-37.08
-39.46
-41.46
-42.47
-43.52
-44.52
-45.57
-46.75
-47.51
-48.39
-49.39
-50.56
-51.97
-53.62
-55.48
-57.60
-60.04
-62.78
-65.63
-68.43
-71.13
K
MAG1
0.15
0.18
0.25
0.32
0.46
0.52
0.57
0.62
0.66
0.71
0.75
0.78
0.85
0.90
0.94
0.97
1.00
1.02
1.03
1.05
1.06
1.07
1.07
1.08
1.08
1.08
30.06
26.96
25.11
23.86
22.75
21.86
21.10
20.39
19.74
19.17
18.61
18.09
17.16
16.29
15.52
14.81
14.15
12.70
11.86
11.10
10.45
9.89
9.38
8.91
8.51
8.11
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE685M13
NE685M13 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
SCHEMATIC
Q1
Q1
CCBPKG
IS
7e-16
MJC
0.34
BF
109
XCJC
0.7
NF
1
CJS
0
VAF
15
VJS
0.75
IKF
0.19
MJS
0
ISE
7.9e-13
FC
0.5
NE
2.19
TF
2.5e-12
BR
1
XTF
5.2
NR
1.08
VTF
4.58
VAR
12.4
ITF
0.011
IKR
0
PTF
0
ISC
0
TR
1e-9
NC
2
EG
1.11
RE
1.3
XTB
0
RB
10
XTI
3
RBM
8.34
KF
0
IRB
0.009
AF
1
RC
10
CJE
0.4e-12
VJE
0.812
MJE
0.5
CJC
0.18e-12
VJC
0.75
(1) Gummel-Poon Model
CCB
LCX
LBX
Collector
LB
Base
CCE
CCEPKG
LE
LEX
Emitter
ADDITIONAL PARAMETERS
Parameters
68533
CCB
0.1e-12
CCE
0.14e-12
LB
0.35e-9
LE
0.4e-9
CCBPKG
0.05e-12
CCEPKG
0.05e-12
LBX
0.05e-9
LCX
0.05e-9
LEX
0.05e-9
UNITS
Parameter
time
Units
seconds (S)
capacitance
farads (F)
inductance
henries (H)
resistance
ohms (Ω)
voltage
volts (V)
current
amps (A)
MODEL RANGE
Frequency: 0.1 to 4.0 GHz
Bias:
VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA
Date:
09/02
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/17/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.