NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA PACKAGE OUTLINE S06 2.1 ± 0.1 1.25 ± 0.1 0.65 DESCRIPTION 1 6 2 5 3 4 2.0 ± 0.2 The UPA814T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 0.9 ± 0.1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 0.2 (All Leads) 1.3 0.7 +0.10 0.15 - 0.05 0 ~ 0.1 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA814T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE1 Forward Current Gain at VCE = 1 V, IC = 3 mA fT Cre2 |S21E|2 NF hFE1/hFE2 Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz 80 110 GHz 9.0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 160 0.85 0.85 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA814T-T1, 3K per reel. California Eastern Laboratories UPA814T TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 200 El em en ts Pe in rE To t al lem en t 100 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0 50 100 0.01 0 150 0.5 1 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 30 VCE = 1 V 200 µA 180 µA DC Current Gain, hFE Collector Current, IC (mA) VCE = 1 V 50 Free Air Collector Current, IC (mA) Total Power Dissipation, PT (mW) 100 160 µA 20 140 µA 120 µA 100 µA 80 µA 10 60 µA 100 40 µA lB = 20 µA 0 0 1 2 3 4 5 1 2 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 10 10 VCE = 1 V f= 2 GHz Insertion Power Gain, IS21eI2 (dB) Gain Bandwidth Product, fT (GHz) 0.5 0.1 0.2 6 5 0 VCE = 1 V f= 2 GHz 5 0 1 2 3 5 Collector Current, IC (mA) 7 10 1 2 3 5 Collector Current, IC (mA) 7 10 UPA814T TYPICAL PERFORMANCE CURVES (TA = 25°C) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT 3 f = 1 MHz Feddback Capacitance, CRE (pF) VCE = 1 V Noise Figure, NF (dB) f = 2 GHz 2 f = 1 GHz 1 0.5 0.1 0 1 2 3 5 7 10 1 5 10 Collector Current, lC (mA) Collector to Base Voltage, VCB (V) MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 20 VCE = 1 V lc = 5 mA VCE = 1 V lc = 5 mA 1.5 30 Noise Figure, NF (dB) Maximum Available Power Gain, MAG (dB) Insertion Power Gain, IS21eI2 (dB) 1.0 MAG 20 IS21EI 2 10 0 1 0.5 0.1 0.5 1 5 0.1 Frequency, f (GHz) 0.5 1.0 2 Frequency, f (GHz) ORDERING INFORMATION PART NUMBER UPA814T-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -1/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE