DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Resistors Built-in TYPE 0.4+0.1 –0.05 2.8±0.2 C B 0.65+0.1 –0.15 1.5 • Complementary to FN1A4M 2 3 1 0.4+0.1 –0.05 E 0.95 0.95 R2 2.9±0.2 R1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 150 –55 to +150 ˚C ˚C Marking 0.16+0.1 –0.06 V V V mA mA mW 0 to 0.1 TJ Tstg 60 50 10 100 200 200 0.3 VCBO VCEO VEBO IC IC PT 1.1 to 1.4 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation (TA = 25 ˚C) Junction temperature Storage Temperature Range Marking : L33 Electrode Connection 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 100 nA TEST CONDITIONS Collector Cutoff Current ICBO DC Current Gain hFE1* 35 62 DC Current Gain hFE2* 80 230 Collector Saturation Voltage VCE(sat)* 0.05 0.2 V IC = 5.0 mA, IB = 0.25 mA Low-Level Input Voltage VIL* 1.08 0.8 V VCE = 5.0, IC = 100 µA High-Level Input Voltage VIH* 3.0 1.4 V VCE = 0.2 V, IC = 5.0 mA Input Resistor R1 7.0 10 13 Resistor Ratio R1/R2 0.9 1.0 1.1 Turn-on Time ton 0.06 0.2 µs VCC = 5 V, Vin = 5 V Storage Time tstg 2.0 5.0 µs RL = 1 kΩ Turn-off Time toff 2.15 6.0 µs 100 VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA kΩ PW = 2 µs, Duty Cycle ≤ 2 % * Pulsed: PW = 350 µs, Duty Cycle = 2 % Document No. D10215EJ3V0DS00 (3rd edition) (Previous No. TC-1654) Date Published October 1995 P Printed in Japan © 1985 FA1A4M TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 Free air 220 µ A 200 µ A 200 IC – Collector Current – mA PT – Total Power Dissipation – mW 250 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 150 100 50 40 180 µ A 160 µ A 30 140 µ A 20 120 µ A 100 µ A 10 0 50 100 150 200 IB = 80 µ A 250 TA – Ambient Temperature – ˚C 0 2 4 6 8 10 VCE – Collector to Emitter Voltage – V COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1.0 500 0.6 Vin = 5 V 10 V 0.4 25 ˚C 100 ˚C –25 ˚C 50 20 10 20 40 60 80 5 1.0 100 2.0 5.0 10 20 50 IC – Collector Current – mA IC – Collector Current – mA COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT INPUT VOLTAGE vs. COLLECTOR CURRENT 2.0 100 50 IC = 10·IB 1.0 20 0.5 TA = 75 ˚C 0.2 25 ˚C –25 ˚C 0.1 Vin – Input Voltage – V VCE(sat) – Collector Saturation Voltage – V 75 0.2 0 10 0.2 V 5.0 2.0 VCE = 5.0 V –25 ˚C 0.05 1.0 0.02 1.0 2.0 5.0 10 20 IC – Collector Current – mA 2 TA = 200 0.8 hFE – DC Current Gain VCE – Collector to Emitter Voltage – V VCE = 5.0 V 50 100 0.5 1.0 25 ˚C TA = 75 ˚C 2.0 5.0 10 20 IC – Collector Current – mA 50 100 FA1A4M COLLECTOR CURRENT vs. INPUT VOLTAGE RESISTOR vs. AMBIENT TEMPERATURE 1000 20 16 25 ˚C TA = 75 ˚C –25 ˚C 100 10 R1 – Resistor – kΩ IC – Collector Current – µA VCE = 5.0 V 12 8 4 1.0 0.4 0.6 0.8 1.0 1.2 1.4 –25 0 25 50 75 100 TA – Ambient Temperature – ˚C Vin – Input Voltage – V SWITCHING TIME vs. COLLECTOR CURRENT 5.0 tstg t – Swiching Time – µ s 2.0 Vin = 5 V VCC = 5 V PW = 2 µs Duty Cycle ≤ 2 % 1.0 0.5 tf 0.2 ton 0.1 0.05 1.0 2.0 5.0 10 20 50 100 IC – Collector Current – mA REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134 3 FA1A4M [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11