DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 • Low Ciss : Ciss = 1100 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PART NUMBER PACKAGE µPA1758G Power SOP8 0.8 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0) VDSS 30 V Gate to Source Voltage (VDS = 0) VGSS ±12.0 V Drain Current (DC) ID(DC) ±6.0 A ID(pulse) ±24 A Drain Current (Pulse) 4.4 +0.10 –0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Note1 6.0 ±0.3 4 5.37 Max. 0.15 0.05 Min. ORDERING INFORMATION 1.44 1.8 Max. 1 Total Power Dissipation (1 unit) Note2 PT 1.7 W Total Power Dissipation (2 unit) Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D12911EJ1V0DS00 (1st edition) Date Published October 1998 NS CP(K) Printed in Japan © 1998 µPA1758 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 4.5 V, ID = 3.5 A 20 30 mΩ RDS(on)2 VGS = 2.5 V, ID = 3.5 A 25 40 mΩ Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 0.8 1.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 13 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±12.0 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz Output Capacitance S 1100 pF Coss 370 pF Reverse Transfer Capacitance Crss 170 pF Turn-on Delay Time td(on) ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15 V 50 ns RG = 10 Ω 190 ns td(off) 550 ns tf 490 ns 15.0 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 2.0 nC Gate to Drain Charge QGD 6.5 nC 0.8 V Body Diode forward Voltage ID = 6.0 A, VDD = 24 V, VGS = 4.0 V VF(S-D) IF = 6.0 A, VGS = 0 TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL V PG. RG RG = 10 Ω GS Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 0 10 % 10 % tr td (on) ton td (off) tf toff 50 Ω RL VDD µPA1758 TYPICAL CHARACTERISTICS (TA = 25 °C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 10 1 0.1 0.01 0.001 Mounted on ceramic Single Pulse substrate of 2000mm2 × 1.1mm Single Pulse , 1 unit 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 VDS=10V Pulsed TA=−50˚C TA=−25˚C TA=25˚C 10 TA=75˚C TA=125˚C TA=150˚C 1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 40 VGS=2.5V 30 20 VGS=4.5V 10 0 1 10 ID - Drain Current - A 100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed ID=3 A 50 25 0 2 4 8 6 10 12 14 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS=10 V ID=1 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed VGS=2.5V 40 IF - Diode Forward Current - A 30 VGS=4.5V 20 10 0 100 VGS=2.5V 10 VGS=0V 1 0.1 ID= 3.0 A − 50 0 50 100 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss 1000 Coss 100 Crss 10 0.1 1 10 100 tf tr td(off) td(on) 100 10 VDS=15V VGS=4V RG =10Ω 1 0.1 1 REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 1 10 ID - Drain Current - A 4 100 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID=6.0 A 8 VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns di/dt =100A/µ s VGS = 0 100 1 0.1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 000 1.5 1.0 1 000 VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C VGS = 4 V 30 VDD=24 V VDD=15 V VDD=6 V VGS 6 20 4 10 2 0 4 8 12 QG - Gate Charge - nC 0 16 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µPA1758 µPA1758 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 80 60 40 20 0 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 Mounted on ceramic substrate of 2000mm2×1.1mm 2.4 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Mounted on ceramic substrate of 2 d ite ID(pulse) = 24 A 2000mm ×1.1mm, 1 unit m ) i Pw L V ) 5 on = S( 4. 1 RD GS= m Pw s 10 (V ID(DC)=6 A = 10 Pw m s = Po 10 we 0 m rD s iss ipa 1 tio n Lim ite d Pulsed 25 ID - Drain Current - A ID - Drain Current - A 100 20 VGS=4.5 V 15 VGS=2.5 V 10 5 TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 TA=150˚C TA=125˚C 1 TA=75˚C TA=25˚C TA=−25˚C TA=−50˚C 0.1 0 1 2 3 4 VGS - Gate to Source Voltage - V 5 µPA1758 [MEMO] 6 µPA1758 [MEMO] 7 µPA1758 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5