DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A) 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1914 is a switching device which can be driven directly by a 4 V power source. The µPA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE µPA1914TE 6-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±4.5 A ID(pulse) ±18 A PT1 0.2 W PT2 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Body Diode Gate Gate Protection Diode Source Marking: TF Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13810EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan © 1998, 1999 µ PA1914 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.5 V | yfs | VDS = –10 V, ID = –2.5 A 1 7.1 RDS(on)1 VGS = –10 V, ID = –2.5 A 43 57 mΩ RDS(on)2 VGS = –4.5 V, ID = –2.5 A 58 86 mΩ RDS(on)3 VGS = –4.0 V, ID = –2.5 A 64 96 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 589 pF Output Capacitance Coss VGS = 0 V 210 pF Reverse Transfer Capacitance Crss f = 1 MHz 86 pF Input Capacitance Ciss VDS = –25 V 546 pF Output Capacitance Coss VGS = 0 V 148 pF Reverse Transfer Capacitance Crss f = 1 MHz 65 pF Turn-on Delay Time td(on) VDD = –15 V 16 ns tr ID = –2.5 A 57 ns VGS(on) = –10 V 63 ns tf RG = 10 Ω 80 ns Total Gate Charge QG VDD= –24 V 11 nC Gate to Source Charge QGS ID = –4.5 A 1.5 nC Gate to Drain Charge QGD VGS = –10 V 2.8 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V 0.88 V Reverse Recovery Time trr IF = 4.5 A, VGS = 0 V 22 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 11 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13810EJ1V0DS00 µ PA1914 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 0 30 60 90 120 TA - Ambient Temperature - ˚C −10 V (@ PW PW −1 −0.1 PW PW ID (DC) =1 0 =1 ms ms =1 00 ms =5 s Single Pulse 2 Mounted on 250mm x 35µm Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board −0.01 −0.1 150 ID (pulse) d ite ) im 10 V − )L on = S( RD GS −1 −10 −100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS −100 VGS = −10 V VGS = −4.5 V −12 −8 VDS = −10 V −10 VGS = −20 V −16 VGS = −4.0 V −4 ID - Drain Current - A ID - Drain Current - A −20 −1 −0.1 TA = 125˚C TA = 75˚C −0.01 TA = 25˚C TA = −25˚C −0.001 −0.0001 0 0.0 −0.2 −0.6 −0.4 −0.8 −1.0 −0.00001 −0.5 −1.0 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = −10 V ID = − 1 mA 100 −1.5 −1.0 −50 0 50 100 −2.0 −2.5 −3.0 −3.5 −4.0 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V −2.0 −1.5 VGS - Gate to Sorce Voltage - V 150 VDS = −10V 10 TA = −25 ˚C TA = 25 ˚C TA = 75 ˚C TA = 125 ˚C 1 0.1 0.01 −0.01 Tch - Channel Temperature - ˚C −0.1 −1 −10 −100 ID - Drain Current - A Data Sheet D13810EJ1V0DS00 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 VGS = −4.0 V 100 TA = 125˚C 80 TA = 75˚C TA = 25˚C 60 TA = −25˚C 40 −0.01 −1 −0.1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1914 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 VGS = −4.5 V 80 TA = 125˚C TA = 75˚C 60 TA = 25˚C TA = −25˚C 40 −0.01 60 TA = 125˚C TA = 75˚C TA = 25˚C 40 TA = −25˚C 30 −0.01 −0.1 −1 −10 −100 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ VGS = −10 V 50 100 ID = −2.5 A VGS = −4.0 V 80 VGS = −4.5 V 60 VGS = −10 V 40 20 −50 0 50 100 Tch - Channel Temperature -˚C 10000 ID = −2.5 A 80 60 40 f = 1 MHz VGS = 0V 1000 Ciss Coss 100 Crss 10 −0.1 −8 −16 −12 −4 VGS - Gate to Source Voltage - V 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 0 −100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID - Drain Current - A 100 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 −1 −0.1 ID - Drain Current - A −20 Data Sheet D13810EJ1V0DS00 −1 −10 VDS - Drain to Source Voltage - V −100 µ PA1914 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Source to Drain Current - A td(on), tr, td(off), tf - Swwitchig Time - ns 1000 tr tf 100 td(off) td(on) 10 VDD = −15V VGS(on) = −10V RG = 10Ω 1 −0.1 −1 ID - Drain Current - A 10 1 0.1 0.01 0.4 −10 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS ID = −4.5 A 10 VDD = −24 V −15 V −6 V 8 6 4 2 0 0 2 4 6 8 10 12 Qg - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W VGS - Gate to Source Voltage - V 12 Without Board 100 Mounted on 250mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - S Data Sheet D13810EJ1V0DS00 5 µ PA1914 [MEMO] 6 Data Sheet D13810EJ1V0DS00 µ PA1914 [MEMO] Data Sheet D13810EJ1V0DS00 7 µ PA1914 • The information in this document is subject to change without notice. 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