DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5 V power source. +0.1 The µPA1900 features a low on-state resistance and 6 5 4 1 2 3 1.5 so on. 2.8 ±0.2 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and 0.16+0.1 –0.06 0 to 0.1 FEATURES • Can be driven by a 2.5 V power source 0.95 • Low on-state resistance 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) ORDERING INFORMATION PART NUMBER PACKAGE µPA1900TE 6-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID(DC) ±5.5 A ID(pulse) ±22 A PT1 0.2 W PT2 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Body Diode Gate Gate Protection Diode Source Marking: TG Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13809EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998, 1999 µ PA1900 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 0.5 0.93 1.5 V | yfs | VDS = 10 V, ID = 3.0 A 3 9.2 RDS(on)1 VGS = 4.5 V, ID = 3.0 A 28 35 mΩ RDS(on)2 VGS = 4.0 V, ID = 3.0 A 29 38 mΩ RDS(on)3 VGS = 2.5 V, ID = 3.0 A 37 45 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 595 pF Output Capacitance Coss VGS = 0 V 222 pF Reverse Transfer Capacitance Crss f = 1 MHz 133 pF Turn-on Delay Time td(on) VDD = 10 V 61 ns tr ID = 3.0 A 172 ns VGS(on) = 4.0 V 220 ns tf RG = 10 Ω 293 ns Total Gate Charge QG VDS = 16 V 6.7 nC Gate to Source Charge QGS ID = 5.5 A 1.2 nC Gate to Drain Charge QGD VGS = 4.0 V 3.1 nC IF = 5.5 A, VGS = 0 V 0.87 V Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13809EJ1V0DS00 µ PA1900 TYPICAL CHARACTERISTICS (TA = 25 °C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 ID (pulse) 80 ID - Drain Current - A dT - Derating Factor - % d ite ) im 5 V 60 40 30 60 90 120 150 TA - Ambient Temperature - ˚C R V (@ ID (DC) 10 10 0m s =1 ms ms 5s 1 0.1 Single Pulse Mounted on 250mm2x 35 µ m Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board 0.01 0.1 1 10 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 FORWARD TRANSFER CHARACTERISTICS 20 100 VGS = 4.5 V PW ) L 4. (on = DS GS 10 20 0 VDS = 10 V 4.0 V 16 ID - Drain Current - A ID - Drain Current - A 10 2.5 V 12 8 TA = 125˚C 75˚C 1 0.1 TA = 25˚C −25˚C 0.01 0.001 4 0.0001 0.00001 0 0.2 0.4 0.6 0.8 1.0 0 1.0 0 50 100 150 | yfs | - Forward Transfer Admittance - S VDS = 10 V ID = 1 mA 1.0 0.5 −50 3.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.5 2.0 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V ★ 100 VDS = −10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 0.01 0.1 1 10 100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet D13809EJ1V0DS00 3 60 VGS = 2.5 V 50 TA =125 °C 75 °C 40 25 °C −25°C 30 20 0.01 50 0.1 1 10 100 40 TA =125 °C 75 °C 25 °C 30 −25°C 20 0.01 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 ID = 3.0 A TA =125 °C 75 °C 30 25 °C −25°C 0.1 1 10 100 80 60 40 20 2 4 6 8 10 50 VGS = 2.5 V 40 4.0 V 4.5 V 30 20 −50 0 50 100 150 Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = 3.0 A 10000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - mΩ VGS = 4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A 4 50 ID - Drain Current - A 40 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A VGS = 4.5 V 20 0.01 RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1900 f = 1 MHz VGS = 0 V 1000 Ciss Coss 100 10 0.1 VGS - Gate to Source Voltage - V Crss 1 10 VDS - Drain Source Voltage - V Data Sheet D13809EJ1V0DS00 100 µ PA1900 SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS 100 IF(S-D) - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 tf td(off) tr 100 td(on) 10 VDD = 10 V VGS(on) = 4.0 V RG = 10 Ω 1.0 0.1 1 10 1 0.1 0.01 0.4 10 0.6 0.8 1.0 1.2 1.4 VF(S-D) - Source to Drain Voltage - V ID - Drain Current - A DYNAMIC INPUT CHARACTERISTICS 10 8 VDD = 16 V 10 V 6 4 2 0 2 4 6 8 12 10 QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W VDS - Drain to Source Voltage - V ID = 5.5 A Single Pulse Without Board 100 Mounted on 250mm2×35µm Copper Pad Connected to Drain Electrode in 50mm×50mm×1.6mm FR-4 Board 10 1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet D13809EJ1V0DS00 5 µ PA1900 [MEMO] 6 Data Sheet D13809EJ1V0DS00 µ PA1900 [MEMO] Data Sheet D13809EJ1V0DS00 7 µ PA1900 • The information in this document is subject to change without notice. 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