DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. PART NUMBER PACKAGE µ PA2706TP Power HSOP8 FEATURES • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) • Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC)1 ±20 A ID(DC)2 ±11 A ID(pulse) ±44 A PT1 15 W PT2 3 W Tch 150 °C Tstg −55 to +150 °C Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (TC = 25°C) Total Power Dissipation Note1 Channel Temperature Storage Temperature Single Avalanche Current Note3 IAS 11 A Single Avalanche Energy Note3 EAS 12.1 mJ Notes 1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16621EJ1V0DS00 (1st edition) Date Published January 2004 NS CP(K) Printed in Japan 2003 µ PA2706TP ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 5.5 A 4.5 RDS(on)1 VGS = 10 V, ID = 5.5 A 11 15 mΩ RDS(on)2 VGS = 4.5 V, ID = 5.5 A 16 22.5 mΩ RDS(on)3 VGS = 4.0 V, ID = 5.5 A 19 29 mΩ Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 660 pF Output Capacitance Coss VGS = 0 V 270 pF Reverse Transfer Capacitance Crss f = 1 MHz 83 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 5.5 A 9 ns tr VGS = 10 V 5 ns td(off) RG = 10 Ω 29 ns 6 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 7.1 nC Gate to Source Charge QGS VGS = 5.0 V 2.1 nC QGD ID = 11 A 3.1 nC VF(S-D) IF = 11 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 11 A, VGS = 0 V 25 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 17 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet G16621EJ1V0DS td(on) tr ton td(off) tf toff µ PA2706TP TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 20 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 15 10 0 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW = 100 µs 10 DC 1 ms Power Dissipation Limited 1 10 ms RDS(on) Limited (at VGS = 10 V) 0.1 TC = 25°C Single pulse 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) Rth(ch-A): Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25°C Rth(ch-C): TC = 25°C Rth(ch-A) 100 10 Rth(ch-C) = 8.33°C/W 1 0.1 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet G16621EJ1V0DS 10 100 1000 3 µ PA2706TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VDS = 10 V Pulsed Pulsed 40 ID - Drain Current - A ID - Drain Current - A 100 VGS = 10 V 45 FORWARD TRANSFER CHARACTERISTICS 4.5 V 35 30 4.0 V 25 20 15 10 10 TA = −55°C 25°C 75°C 150°C 1 0.1 5 0 0.01 0 0.5 1 1.5 2 3 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 -50 0 50 100 150 100 VDS = 10 V Pulsed TA = −55°C 25°C 75°C 150°C 10 1 0.1 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 VGS = 4.0 V 20 4.5 V 15 10 10 V 5 0 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 2 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 30 Pulsed 25 20 15 ID = 5.5 A 10 5 0 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 1 VGS - Gate to Source Voltage - V 3 RDS(on) - Drain to Source On-state Resistance - mΩ 0 VDS - Drain to Source Voltage - V Data Sheet G16621EJ1V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed 35 VGS = 4.0 V 30 25 20 4.5 V 15 10 V 10 5 0 -50 0 50 100 Crss VGS = 0 V f = 1 MHz 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 100 VDS - Drain to Source Voltage - V VDD = 15 V VGS = 10 V RG = 10 Ω tf td(off) td(on) 10 tr 6 VDD = 24 V 15 V 6V 25 5 20 4 VGS 15 3 10 2 VDS 5 1 ID = 11 A 0 1 0.1 1 10 0 0 100 2 4 6 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 8 1000 10 VGS = 10 V trr - Reverse Recovery Time - ns Pulsed IF - Diode Forward Current - A Coss 100 10 0.01 150 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss VGS - Gate to Source Voltage - V 40 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2706TP 0V 1 0.1 VGS = 0 V di/dt = 100 A/µs 100 10 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 1 10 100 IF - Diode Forward Current - A Data Sheet G16621EJ1V0DS 5 µ PA2706TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Energy Derating Factor - % IAS - Single Avalanche Current - A VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 10 EAS = 12.1 mJ V DD = 15 V RG = 25 Ω V GS = 20 → 0 V IAS ≤ 11 A 100 80 60 40 20 0 1 0.00001 0.0001 0.001 0.01 L - Inductive Load - H 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C PACKAGE DRAWING (Unit: mm) Power HSOP8 8 5 1 6.0 ±0.3 4 0.8 ±0.2 5.2 +0.17 –0.2 0.05 ±0.05 0.15 S 4.4 ±0.15 +0.10 –0.05 1.44 TYP. 1.49 ±0.21 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain 0.10 S 1.27 TYP. +0.10 –0.05 4 2.9 MAX. 2.0 ±0.2 8 0.12 M 1.1 ±0.2 0.40 1 9 4.1 MAX. 5 EQUIVALENT CIRCUIT Drain Body Diode Gate Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional Gate Protection Diode 6 protection circuit is externally required if a voltage exceeding the rated Source voltage may be applied to this device. Data Sheet G16621EJ1V0DS µ PA2706TP • The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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