DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2708GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The µ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) PART NUMBER PACKAGE µ PA2708GR-E1 Power SOP8 µ PA2708GR-E2 Power SOP8 µ PA2708GR-E1-A Note µ PA2708GR-E2-A Note Power SOP8 Power SOP8 Note Pb-free (This product does not contain Pb in RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) external electrode and other parts.) • Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±17 A ID(pulse) ±68 A Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW =10 sec) Note2 Channel Temperature PT1 1.1 W PT2 2.5 W Tch 150 °C Tstg −55 to +150 °C Single Avalanche Current Note3 IAS 17 A Single Avalanche Energy Note3 EAS 28.9 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Note Channel to Drain Lead Note Rth(ch-A) 114 °C/W Rth(ch-L) 30 °C/W Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17033EJ1V0DS00 (1st edition) Date Published May 2005 CP(K) Printed in Japan 2004 µ PA2708GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note MIN. TYP. MAX. UNIT 10 µA ±100 nA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.0 | yfs | VDS = 10 V, ID = 9.0 A 10 RDS(on)1 VGS = 10 V, ID = 9.0 A 4.5 5.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 9.0 A 5.6 7.5 mΩ S Input Capacitance Ciss VDS = 10 V 4700 pF Output Capacitance Coss VGS = 0 V 670 pF Reverse Transfer Capacitance Crss f = 1 MHz 340 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9.0 A 19 ns Rise Time Turn-off Delay Time tr VGS = 10 V 26 ns td(off) RG = 10 Ω 100 ns 27 ns Fall Time tf Total Gate Charge QG VDD = 15 V 38 nC Gate to Source Charge QGS VGS = 5 V 13 nC QGD ID = 17 A 12 nC VF(S-D) IF = 17 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 17 A, VGS = 0 V 33 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 27 nC Gate Resistance RG f = 1 MHz 1.2 Ω Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet G17033EJ1V0DS td(on) ton tf toff µ PA2708GR TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) 100 80 60 40 1 ms RDS(on) Limited (at VGS = 10 V) 1 Power Dissipation Limited 0 20 40 60 80 100 TA = 25°C 100 ms Single pulse Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 0.01 0.01 120 140 160 10 ms PW = 100 µs 0.1 20 0 ID(DC) 10 ID - Drain Current - A dT - Percentage of Rated Power - % 120 0.1 TA - Ambient Temperature - ˚C 1 10 s 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 114°C/W 100 10 1 0.1 Single pulse Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 FORWARD TRANSFER CHARACTERISTICS 70 100 60 VGS = 10 V 50 40 30 20 10 Tch = −55°C 25°C 75°C 150°C 10 4.5 V ID - Drain Current - A ID - Drain Current - A 100 1 0.1 VDS = 10 V Pulsed Pulsed 0 0.01 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain to Source Voltage - V 1 2 3 4 5 VGS - Gate to Source Voltage - V Data Sheet G17033EJ1V0DS 3 µ PA2708GR GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.5 2 1.5 1 VDS = 10 V Pulsed 0.5 0 RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 | yfs | - Forward Transfer Admittance - S 100 Tch = −55°C 25°C 10 75°C 150°C 1 VDS = 10 V Pulsed 0.1 0.01 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15 10 VGS = 4.5 V 5 10 V 0 0.1 1 10 100 20 ID = 9.0 A Pulsed 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 15 10000 Ciss Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 1 ID - Drain Current - A ID - Drain Current - A 10 VGS = 4.5 V 5 10 V ID = 9.0 A Pulsed 1000 Coss Crss 100 0 VGS = 0 V f = 1 MHz 10 -50 0 50 100 150 Tch - Channel Temperature - °C 4 0.1 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 3 0.1 1 10 VDS - Drain to Source Voltage - V Data Sheet G17033EJ1V0DS 100 µ PA2708GR SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 6 30 td(off) 100 tf tr 10 td(on) VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 VDD = 24 V 15 V 6V 20 2 1 VDS 0 100 0 0 10 20 30 40 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 10 trr - Reverse Recovery Time - ns 100 IF - Diode Forward Current - A 3 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 10 V 0V 1 0.1 Pulsed 100 10 di/dt = 100 A/µs VGS = 0 V 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 EAS = 28.9 mJ 10 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 17 A 100 IAS = 17 A Energy Derating Factor - % IAS - Single Avalanche Current - A 4 VGS ID - Drain Current - A 1 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet G17033EJ1V0DS 5 µ PA2708GR PACKAGE DRAWING (Unit: mm) Power SOP8 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain 6.0 ±0.3 4 4.4 5.37 MAX. 0.8 0.15 +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.5 ±0.2 0.10 0.12 M EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet G17033EJ1V0DS µ PA2708GR • The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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