NEC 2SK3113-Z

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
PART NUMBER
PACKAGE
a low gate charge and excellent switching characteristic, and
2SK3113
TO-251 (MP-3)
designed for high voltage applications such as switching
2SK3113-Z
TO-252 (MP-3Z)
power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Avalanche capability ratings
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±2.0
A
ID(pulse)
±8.0
A
PT1
20
W
PT2
1.0
W
Tch
150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Note2
Channel Temperature
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note3
IAS
2.0
A
Single Avalanche Energy
Note3
EAS
2.7
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1998, 2001
2SK3113
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
µA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 1.0 A
0.5
RDS(on)
VGS = 10 V, ID = 1.0 A
3.3
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Ω
4.4
Input Capacitance
Ciss
VDS = 10 V
290
pF
Output Capacitance
Coss
VGS = 0 V
60
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
5
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 1.0 A
7
ns
VGS = 10 V
2
ns
RG = 10 Ω, RL = 10 Ω
22
ns
9
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 450 V
9
nC
Gate to Source Charge
QGS
VGS = 10 V
2.4
nC
Gate to Drain Charge
QGD
ID = 2.0 A
2
nC
Body Diode Forward Voltage
VF(S-D)
IF = 2.0 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 2.0 A, VGS = 0 V
0.9
µs
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
2.0
µC
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = 20 → 0 V
RG
PG.
VGS
VGS
Wave Form
0
90%
ID
VGS
0
ID
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
2
IG = 2 mA
RL
50 Ω
VDD
10%
0 10%
Wave Form
τ
VDD
PG.
90%
BVDSS
VDS
ID
90%
VDD
ID
IAS
VGS
10%
Data Sheet D13336EJ3V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3113
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
20
40
60
80
100
120 140
30
25
20
15
10
5
0
160
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
35
0
20
40
60
80
100
120 140
160
TC - Case Temperature - ˚C
Tch - Channel Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
TC = 25˚C, Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
)
0V
10
ID(pulse)
=2
S
G
tV
a
d(
ite
1
R
n)
(o
DS
Lim
0.1
1
10
0
ID(DC)
Po
we
r
1
10
PW
=
10
µs
µs
m
s
m
s
10
Di
0
ss
m
ipa
s
tio DC
n
Lim
ite
d
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
100
Rth(ch-A) = 125˚C/W
100
10
Rth(ch-C) = 6.25˚C/W
1
0.1
0.01
10 µ
100 µ
1m
10 m
100 m
1
Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
10
100
1000
PW - Pulse Width - s
Data Sheet D13336EJ3V0DS
3
2SK3113
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Pulsed
VGS = 10 V
100
8V
ID - Drain Current - A
ID - Drain Current - A
5
6V
4
3
2
Tch = 125˚C
75˚C
10
1.0
Tch = 25˚C
−25˚C
0.1
1
0
0
0
10
20
30
40
0
5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
5.0
4.0
3.0
2.0
1.0
VDS = 10 V
ID = 1 mA
0
−50
0
50
100
150
100
VDS = 10 V
Pulsed
10
Tch = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
6
ID = 2.0 A
5
1.0 A
4
3
2
1
0
0
5
10
10
15
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
7
6
5
VGS = 10 V
20 V
4
3
2
1
0
VGS - Gate to Source Voltage - V
4
1.0
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
Tch - Channel Temperature - ˚C
7
10
VDS = 10 V
Pulsed
15
Data Sheet D13336EJ3V0DS
0.1
1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
9
ID = 2 A
8
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
2SK3113
7
6
1A
5
4
3
2
1
100
10
1.0
VGS = 10 V
0.1
0V
VGS = 10 V
0
−50
0
100
50
0
150
0.5
Pulsed
1.5
1.0
VF(S-D) - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
1000
Ciss
100
Coss
10
Crss
VGS = 0 V
f = 1 MHz
1
0.1
1
10
td(off)
tf
10
td(on)
tr
1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
0.1
0.1
100
1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A/µs
VGS = 0 V
1000
100
10
0.1
1.0
10
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10000
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
800
ID = 2.0 A
14
600
VDD = 450 V
300 V
150 V
12
VGS
10
400
8
6
200
4
2
VDS
0
0
ID - Drain Current - A
4
8
12
VGS - Gate to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
100
0
16
QG - Gate Charge - nC
Data Sheet D13336EJ3V0DS
5
2SK3113
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
120
10
IAS = 2.0 A
EAS
1.0
=2
.7 m
J
RG = 25 Ω
VDD = 150 V
VGS = 20 → 0 V
Starting Tch = 25˚C
0.1
10 µ
100 µ
1m
10 m
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
100
80
60
40
20
0
25
L - Inductive Load - H
6
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 2.0 A
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
Data Sheet D13336EJ3V0DS
2SK3113
PACKAGE DRAWINGS (Unit: mm)
2) TO-252 (MP-3Z)
1.1 ±0.2
+0.2
0.5 −0.1
+0.2
0.5 −0.1
0.75
2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
1.5 −0.1
2.3 ±0.2
1.0 MIN.
1.8TYP.
0.5 ±0.1
0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.7
0.8 4.3 MAX.
1.1 ±0.2
13.7 MIN.
3
7.0 MIN.
2
5.5 ±0.2
1.6 ±0.2
1
4
5.5 ±0.2
10.0 MAX.
6.5 ±0.2
5.0 ±0.2
0.5 ±0.1
4
+0.2
2.3 ±0.2
2.0
MIN.
5.0 ±0.2
1.5 −0.1
6.5 ±0.2
+0.2
1) TO-251 (MP-3)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D13336EJ3V0DS
7
2SK3113
• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1