NTE NTE475

NTE475
Silicon NPN Transistor
RF Power Output
Description:
The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier
and driver applications to 300MHz.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage,VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, Note 1
18
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 0.25mA, IE = 0
36
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
4
–
–
V
IC = 100mA, VCE = 13.6V, f = 100MHz
–
350
–
MHz
Cob
VCB = 13.6V, IE = 0, f = 100kHz
–
12.5 20.0
Power Input
Pin
RL = 50Ω, Pout = 12W, f = 175MHz
–
–
4.0
W
Common–Emitter Amplifier Power Gain
Gpe
4.77
5.0
–
dB
η
80
–
–
%
Dynamic Characteristics
Current Gain – Bandwidth Product
Output Capacitance
fT
pF
Functional Tests
Collector Efficiency
Note 1. Pulsed thru a 25mH inductor.
Collector
.200
(5.08)
Dia
Emitter/Stud
.430
(10.92)
Base
.340 (8.63) Dia
.038 (0.98) Dia
.480
(12.19)
Max
.113 (2.88)
10–32 NF–2A
.320
(8.22)
Max
.078
(1.97)
Max
.455
(11.58)
Max