VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch (mm) CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP100 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 300 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 10 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 3 V Re Responsivity 940 nm SR Sensitivity @ Peak 35 Typ. 55 µA .24 %/°C 30 .25 GΩ 50 .036 nA pF A/(W/cm2) .047 .50 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±70 Degrees NEP Noise Equivalent Power 2.5 x 10-14 (Typ.) W ⁄ Hz Specific Detectivity 1.1 x 10 13 (Typ.) cm Hz / W D* 725 30 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 47