MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU08AA-130 ● Symmetrical GCT ● GCT and Gate driver are connected ● ITQRM Repetitive controllable on-state current ............ 800A ● IT(AV) Average on-state current ...................... 330A ● VDRM Repetitive peak off-state voltage .................. 6500V APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters. OUTLINE DRAWING Dimensions in mm (208) (104) (160) (120) (20) G G 80±0.5 K G DE1 DE2 TPG TPX LED4 LED3 LED2 LED1 K G (85) (140) K K (165) G .2 0 7± φ4 K (250) 9MAX G (80) K (48) (46.5) (46.5) (48) (5) (20) (80) 6±0.5 6±0.5 φ47±0.2 10MIN A (1.6) 6±0.5 (13.7) 6±0.5 14.5±1.3 20MAX 160MIN 10.1±0.9 26.2±0.3 40MAX A PART MAGNIFICATION Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART (Type name : FGC800A-130DS) MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM VLTDS Conditions Parameter — Repetitive peak reverse voltage — Non-repetitive peak reverse voltage Repetitive peak off-state voltage VGK = –2V VGK = –2V Non-repetitive peak off-state voltage Long term DC stability voltage VGK = –2V, λ = 100 Fit Symbol Parameter ITQRM Repetitive controllable on-state current IT(RMS) IT(AV) ITSM I2t RMS on-state current Average on-state current Surge on-state current Current-squared, time integration diT/dt Critical rate of rise of on-state current VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH, VRG = 20V Tj = 25/115°C, With GU-D08 (see Fig. 1, 3) Applied for all conduction angles f = 60Hz, sinewave θ = 180°, Tf = 55°C One half cycle at 60Hz, Tj = 115°C Start VD = 3000V, IT = 800A, CS= 0.1µF, RS= 10Ω Tj = 25/115°C, f = 60Hz, With GU-D08 (see Fig. 1,2 ) (Recommended value 13kN) Typical value Voltage class 6500 6500 6500 6500 3600 Unit V V V V V Ratings Unit 800 A 520 330 4.8 9.6 × 104 A A kA A 2s 1000 A/µs 10 21 500 800 5 17 100 120 –20 ~ +115 –20 ~ +150 11.1 ~ 15.8 530 V V A A kW kW W W °C °C kN g ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions VTM IRRM IDRM IGRM On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current dv/dt Critical rate of rise of off-state voltage tgt td Delay time Eon Turn-on switching energy IT = 800A, Tj = 115°C VRM = 6500V, Tj = 115°C VDM = 6500V, VGK = –2V, Tj = 115°C VRG = 21V, Tj = 115°C VD = 3000V, VGK = –2V, Tj = 115°C (Expo. wave) (see Fig. 4) IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C CS= 0.1µF, RS = 10Ω With GU-D08 (see Fig. 1, 2) ts Storage time Turn-on time Eoff Turn-off switching energy QRR Erec IGT VGT Rth(j-f) Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage Thermal resistance IT = 800A, VDM = 3/4 VDRM, VD = 3000V CS= 0.1µF, RS= 10Ω, VRG = 20V, Tj = 115°C With GU-D08 (see Fig. 1, 5) VR = 3000V, IT = 800A, di/dt = 1000A/µs CS= 0.1µF, RS = 10Ω, Tj = 115°C (see Fig. 5, 6) DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — Limits Typ — — — — Max 6.8 150 100 50 3000 — — V/µs — — — — 5.0 1.0 µs µs — — 1.6 J/P — — 3.0 µs Unit V mA mA mA — — 6.0 J/P — — — — — — — — — — 1650 5.0 0.5 1.5 0.025 µC J/P A V °C/W Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Fig. 1 Turn-on and Turn-off waveform IT VD VD td tgt td ; 0VG ~ 0.9VD tgt ; 0VG ~ 0.1VD diG/dt ; 0.1IGM ~ 0.9IGM ts ; 0VG ~ 0.9IT diGQ/dt ; 0.1IGQ ~ 0.9IGQ ts diG/dt IGM IG diGQ/dt VRG VRG IGQ Fig. 2 Turn-on test circuit Fig. 4 dv/dt test waveform Fig. 3 Turn-off test circuit (With clamp circuit) L dV/dt 0.632VD/τ L(line) VD Rs VD GCT 0.632VD FWDi L(load) Rc Cs VD CDi GCT τ Lc t Cc Fig. 5 Turn-off and Recovery test circuit Fig. 6 Reverse recovery waveform QRR L (line) Rs IT L (load) GCT2 trr × IRM /2 di/dt (0 ~ 50%IT) 50%IT trr Cs 0 VD GCT1 Rs Cs IRM 50%IRM 90%IRM GCT1 : For turn-off test GCT2 : For Recovery test Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GATE DRIVER PART (Type name : GU-D08) Symbol VC Parameter Power supply P Conditions (Note 1) DC power supply — Power consumption (Note 2) — f tfd trd diG/dt IGM tW IG diGQ/dt Dmax Ta — IT = 330A, f = 780Hz Optical fiber data link Control signal (Note 3) Transmitter : HFBR-1521 (HP) Receiver : HFBR-2521 (HP) IT = 330A, Duty 33% Frequency Delay time of on gate current Delay time of off gate current Critical rate of rise of on gate current Peak on gate current Width of on high gate current Tj ≥ –10°C On gate current Critical rate of rise of off gate current VRG= 20V Maximum duty Operation temperature (Recommend : ≤ 40°C) Temperature Status signal (Note 4) Min 19 2.5 — Limits Typ 20 — — Max 21 — 35 — — — — — — — 50 — 3 1.25 — — –10 — — — — — 90 — — 1200 — — — 780 3.0 3.0 — — — — — 100 +60 — Hz µs µs A/µs A µs A A/µs % °C — Unit V W Fig. 7 Gate current, gate voltage and control signal waveform diG/dt (10A ~ 80A) 80A IGM IG GATE CURRENT tw diGQ/dt IGQ tfd VG = 0 GATE VOLTAGE trd VG = 0 VRG 50% CONTROL SIGNAL ton toff T = 1/f Note 1. (1) Guaranteed power supply voltage for operation is 19V minimum and 21V maximum. (2) When over voltage occurs, GDU voltage bus (G-K voltage for GCT) is clamped to be 21V if mamimum voltage for input gata voltage from power supply is 25V and maximum duration of over voltage higher than 21V from power supply is 0.4 sec when control signal is on (Please see Fig. 8). (3) When over voltage occurs, GDU voltage bus is clamped to be 21V with no time limitation if maximum voltage from power supply is 25V and control signal is off (Please see Fig. 8). Note 2. GCT is off state and no gate signal is supplied for gate driver. No leakage current flows between gate and cathode of GCT. Note 3. Optic fiber data link HFBR-1521 and HFBR-2521 are interlocked each other. Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 4. 1. Status signal from LED (1) Status signal LED 1 (Red) OFF ON LED 2 (Yellow) ON OFF Status G-K PS Normal Fault Fault Fault Normal Normal G-K short G-K short 20±1V Voltage down 20±1V Voltage down Status of GCT On state Off state (2) Fault signal 2. Status signal from Transmitter PS LED (LED 4) On Off, V < 17.5V (Typ.) On Off, V < 17.5V (Typ.) G-K LED (LED 3) On Off (If V > 12.5V (Typ.) then LED 3 is on) Off Off (L : Light NL : No light) (Note 5) (1) Normal operation (2) Fault signal (O/V or U/V) L Control signal (Control board) L Control signal (Control board) NL NL L Control signal (GDU input) L Control signal (GDU input) NL NL L L L Status signal (GDU output) NL NL Status signal (GDU output) (3) Fault signal (G-K short) Normal Fault (3) Fault signal (fiber optic) L Control signal (Control board) NL Control signal (GDU input) NL L Control signal (Control board) NL L Control signal (GDU input) NL (Always No light) L NL Status signal (GDU output) Normal Status signal (GDU output) L (Always light) Fault Note 5. About over voltage fault signal, please see Fig. 8. Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Fig. 8 Over voltage fault signal timing chart Power supply voltage 25V Maximum Guaranteed Voltage (Note 6) 22V 21V t3 19V t1 t2 GDU Voltage bus (G-K Voltage for GCT) 21V (Note 8) 19V Status Signal Control Signal Fault signal start 1 t1 < 1.0ms (Max. repetition rate ; 1 pulse/100ms) 2 t2 ≥ 1.0ms 3 t3 < 0.4sec System shut down Control signal off Note 6. Maximum peak voltage of GDU input voltage from power supply should be lower than 25V. Note 7. If the period for over voltage < 1.0ms (period t1), no fault signal is sent. ` If the period for over voltage ≥ 1.0ms, fault signal starts after period t2 from 22V of power supply voltage. System should be shut down (Control signal should be off) within period t3 from fault signal start. Note 8. GDU Voltage bus (G-K Voltage for GCT) is clamped to be 21V if power supply voltage is higher than 21V after system shut down (control signal off). Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 103 TURN OFF SWITCHING ENERGY Eoff (J/P) Tj=25°C 7 5 3 2 10 REVERSE RECOVERY CHARGE QRR(µC) Tj=115°C 102 0 1 2 3 4 5 6 7 8 1.0 Typ 0.5 0.0 0 100 200 300 400 500 600 700 800 900 1000 Erec VS IT 8 VD=3000V, VDM=VD+2.34∗IT Tj=115°C, With GU-D08 7 Cs=0.1µF, Rs=10Ω 6 Max 5 Typ 4 3 Turn-off and Recovery test circuit L(line) 2 L(load) GCT2 Rs Cs VD Rs Cs GCT1 1 GCT1:Turn-off test GCT2:Recovery test 0 100 200 300 400 500 600 700 800 9001000 8 Condition 7 VR=3000V, Tj=115°C di/dt=1000A/µs 6 Cs=0.1µF, Rs=10Ω Max 5 4 Typ 3 Turn-off and Recovery test circuit L(line) 2 L(load) GCT2 Rs Cs VD GCT1 1 0 Rs Cs GCT1:Turn-off test GCT2:Recovery test 0 100 200 300 400 500 600 700 800 9001000 TURN OFF CURRENT IT (A) ON-STATE CURRENT IT (A) QRR VS IT MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 2500 0.035 Condition VR=3000V, Tj=115°C 2000 di/dt=1000A/µs Cs=0.1µF, Rs=10Ω Max 1500 Typ 1000 Turn-off and Recovery test circuit L(line) L(load) GCT2 Rs Cs VD GCT1 0 Max 1.5 Eoff VS IT Condition 500 Condition VD=3000V, Tj=115°C di/dt=1000A/µs 2.0 Cs=0.1µF, Rs=10Ω With GU-D08 TURN ON CURRENT IT (A) 9 0 2.5 ON-STATE VOLTAGE (V) REVERSE RECOVERY ENERGY Erec(J/P) 7 5 3 2 TURN ON SWITCHING ENERGY Eon (J/P) 7 5 3 2 Rs Cs GCT1:Turn-off test GCT2:Recovery test 0 100 200 300 400 500 600 700 800 9001000 ON-STATE CURRENT IT (A) THERMAL IMPEDANCE Zth(°C/W) ON-STATE CURRENT (A) 104 Eon VS IT 0.03 0.025 0.02 0.015 0.01 0.005 0 0.001 0.01 0.1 1 10 TIME (S) Mar. 2001