APTGF330A60D3 Phase Leg NPT IGBT Power Module VCES = 600V IC = 330A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 600 460 330 800 ±20 1400 Tj = 125°C 800A@420V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF330A60D3 – Rev 0 3 4 Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 power connectors • High level of integration APTGF330A60D3 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn off energy Symbol Characteristic Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Min Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 400A RG = 0.82Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 400A RG = 0.82Ω Min Test Conditions IF = 400A VGE = 0V IF = 400A VR = 300V di/dt =900A/µs IF = 400A VR = 300V di/dt =900A/µs TJ TSTG TC Torque Wt 2 1.5 2.0 2.2 750 Typ 18 1.6 165 40 250 2.5 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight 6.5 600 V nA Max Unit nF ns 50 ns 285 40 Tj = 125°C 8.2 Tj = 25°C 24 Tj = 125°C 40 Min IGBT Diode Typ mJ Max 1.6 -40 -40 -40 3 3 Unit V mJ µC Max 0.089 0.15 2500 APT website – http://www.advancedpower.com V 180 Tj = 25°C Tj = 125°C M6 M6 Unit V µA mA 35 Typ 1.25 1.2 Symbol Characteristic VISOL Max 4.5 Min Thermal and package characteristics RthJC Typ 600 13 Reverse diode ratings and characteristics VF Test Conditions VGE = 0V, IC = 10 mA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T VGE = 15V j = 25°C IC = 400A Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Unit °C/W V 150 125 125 5 5 380 July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage °C N.m g 2-3 APTGF330A60D3 – Rev 0 Electrical Characteristics APTGF330A60D3 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF330A60D3 – Rev 0 July, 2003 Package outline