RF2127 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment Product Description 2 POWER AMPLIFIERS • DECT Cordless Applications -A- The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 1900MHz, with over 100mW transmitted power. It will also function as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. 0.160 0.152 0.200 0.192 0.018 0.014 0.010 0.004 0.050 0.248 0.232 8° MAX 0° MIN 0.059 0.057 0.0100 0.0076 0.0500 0.0164 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding flash, protrusions or burrs. 3. Lead coplanarity: 0.005 with respect to datum "A". 4. Package surface finish: Matte (Charmilles #24~27). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS Package Style: SOIC-8 Features • Single 3.0V to 6.5V Supply • 100mW Linear Output Power • 25dB Small Signal Gain • 30% Efficiency VCC2 1 BIAS CIRCUITS 8 VCC1 GND1 2 7 RF OUT PD 3 6 RF OUT RF IN 4 5 GND2 • Digitally Controlled Power Down Mode • 1500MHz to 1900MHz Operation Ordering Information RF2127 RF2127 PCBA Functional Block Diagram Rev A3 010720 Medium Power Linear Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-79 RF2127 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +7.5 -0.5 to +5.5 125 +12 20:1 -40 to +85 -40 to +150 VDC V mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =5V, VPD =5V, ZLOAD =106Ω, PIN =-3dBm, Freq=1800MHz Overall Frequency Range Maximum Output Power Maximum Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Input VSWR Input Impedance Noise Figure Condition 23 1500 to 1900 +20 +23 30 25 -25 -22 2:1 50 7 MHz dBm dBm % dB dBc dBc +17 -40 -45 -44 36 dBm dBc dBc dBc % VCC =5V, Pin=-3dBm VCC =6V, Pin=0dBm Maximum output, VCC =VPD =5V POUT =20dBm POUT =20dBm Ω dB Two-Tone Specification Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency PEP-3dB POUT =+14dBM for each tone POUT =+14dBM for each tone POUT =+14dBM for each tone Power Control Power Down “ON” Power Down “OFF” VCC 0 1.2 V V Voltage supplied to the input; Part is “ON” Voltage supplied to the input; Part is “OFF” Power Supply Voltage Current 5 3.0 to 6.5 50 80 65 10 2-80 V V mA mA µA Specifications Operating Limits Operating Idle Maximum output Power Down Rev A3 010720 RF2127 Function VCC2 2 GND1 3 PD 4 RF IN 5 GND2 6 RF OUT 7 8 RF OUT VCC1 Rev A3 010720 Description Interface Schematic Power supply for the driver stage and interstage matching. Matching is typically done by a microstrip line to VCC that is RF grounded at the VCC side. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. This connection should be separated from the ground connection for the output stage, i.e., using separate traces and vias. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If VPD is below VCC, output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50 Ω input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. This connection should be separated from the ground connection for the driver stage, i.e., using separate traces and vias. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50 Ω, an external series microstrip line is required. Same as pin 6. 2 POWER AMPLIFIERS Pin 1 Power supply for the bias circuits. An external RF bypass capacitor of 22 pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. 2-81 RF2127 Application Schematic 1850MHz VCC 1 nF 2 330 pF POWER AMPLIFIERS 22 pF 0.010" x 0.170" 1 VPD POWER DOWN 6.2 pF W=0.010" L=Quarter wave length BIAS CIRCUITS 22 pF 8 16 pF 2 7 3 6 4 5 0.010" x 0.170" RF IN RF OUT 50 Ω µ strip PCB material: FR-4 Thickness: 0.031" PACKAGE BASE Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 C1 1 µF C2 1 nF C4 330 pF P1 W=0.010" L=0.170" 1 P1-1 BIAS CIRCUITS 8 2 7 3 6 C7 22 pF L=0.320" W=0.010" P1-3 1 VCC 2 GND 3 VPD RF OUT P1-3 C3 1 nF RF IN C5 330 pF 0.010" x 0.170" J1 4 5 J2 0.025" x 0.060" 0.025" x 0.165" C8 16 pF 2127400 Rev A (PCB mat'l: FR-4, Thickness: 0.031") C6 6.2 pF 2-82 Rev A3 010720 RF2127 Evaluation Board Layout Board Size 1.55” x 1.07” POWER AMPLIFIERS 2 Rev A3 010720 2-83 RF2127 POWER AMPLIFIERS 2 2-84 Rev A3 010720