SHINDENGEN HVX-2 Series Power MOSFET 2SK2672 ( F5W90HVX2 ) N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 240V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Pulse width≦10μs, Duty cycle≦1/100 Tch = 150℃ Tch = 25℃ Tch = 25℃ （ Recommended torque ：0.5 N･m ） Ratings -55～150 150 900 ±30 5 10 5 80 5 100 10 0.8 Unit ℃ V A W A mJ N･m 2SK2672 ( F5W90HVX2 ) HVX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2.5A, RL = 60Ω, VGS = 10V Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 900 Typ. Max. 250 ±0.1 2.4 2.5 4.0 2.1 3.0 45 1140 23 105 55 210 Unit V μA S Ω V 2.8 3.5 1.5 1.56 ℃/Ｗ nC pF 100 350 ns 2SK2672 Transfer Characteristics 10 Tc = −55°C 25°C Drain Current ID [A] 8 6 100°C 150°C 4 2 VDS = 25V TYP 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2672 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 100 10 ID = 2.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2672 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2672 Safe Operating Area 10 100µs 200µs Drain Current ID [A] 1 1ms R DS(ON) limit 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK2672 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SK2672 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK2672 Capacitance 10000 Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss 10 f=1MHz Ta=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 1 0.1 10 1 Inductance L [mH] IAS = 5A 10 EAS = 100mJ VDD = 100V VGS = 15V → 0V Rg = 60Ω Single Avalanche Current - Inductive Load EAR = 10mJ 2SK2672 100 2SK2672 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2672 Gate Charge Characteristics 500 20 400 15 VGS VDD = 400V 200V 300 100V 10 200 5 100 ID = 5A TYP 0 0 20 40 60 Gate Charge Qg [nC] 80 0 100 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS