CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900 and DCS1800 transmit signals. The amplifier can be configured for 2 separate inputs. Power control is best achieved by variation of VDD1/VDD2 and VDD3 drain voltages with an external transistor. A proposed power control circuit configuration is described. External PMOS drain switch should be used to achieve low leakage. 16 pin HSOF (Plastic) Features • Single positive rail only • Typical output power of 35.5dBm at 900MHz and 33dBm at 1800MHz • Typical efficiency of 37% at 900MHz and 37% at 1800MHz • Small package size with integral heat-sink: 16-pin HSOF (5.6 × 4.4 × 0.9mm) • 3-stage amplifier chain •Simple pin diode circuitry is used to switch between 1800 and 900MHz matching circuits • Off mode insertion loss typically 27dB at 900MHz (Pin = +6dBm at VDD = 0V) • Typical transmit noise @20MHz offset –79dBm/100kHz Applications Dual-band handsets transmitting on the GSM900 or DCS1800 frequencies Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) • Drain voltage VDD1, VDD2, VDD3 8 V • Gate voltage VGG1, VGG2, VGG3 –5 to +1 V • Input power Pin, max. 12 dBm • Channel temperature Tch, max. 150 °C • Operating temperature Ta –30 to +90 °C • Storage temperature Tstg –40 to +150 °C Note on Handling GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The IC will be damaged in the range from 60 to 100V@200pF, 0Ω. The actual ESD test data will be submitted later. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E00223-PS CXG1047FN Block Diagram Dual Band GSM900/18800 PA Configuration Antenna VDD1 VDD2 VDD3 Switched output matching network LPF (> 2500MHz) RFin RF Out VGG1 VGG2 VGG3 Duplexer Rx900/1800/(1900) CXG1091/1092 Pin Configuration Bottom GND 9 8 GND RFin 10 7 GND Vg1 NC 11 6 Vd3/RFout Vd1 12 5 Vd3/RFout NC 13 4 Vd3/RFout Vg2 14 3 Vd3/RFout Vd2 15 2 NC M900 16 1 Vg3 –2– CXG1047FN Power Amplifier Performance Measurement Conditions: Ta = 25°C, Pin = +6dBm at 900MHz and Pin = +9dBm at 1750MHz, pulsed DC conditions: 12.5% duty cycle 577µs burst duration. All items are specified with the recommended schematic shown on page 6. Item Condition Symbol Min. Typ. Max. Unit Frequency Frequency range (1) GSM900 880 915 MHz Frequency range (2) DCS1800 1710 1785 MHz Output Power (1) Output power – 900MHz POUT VDD = 3.5V 34.5 35.5 dBm POUT VDD = 3.5V 31.5 33 dBm POUT VDD = 4V, Pin = +7dBm 31.5 33 dBm Power control range GSM900 PCTL ∗1 38 dB Power control range DCS1800 PCTL ∗1 35 dB Off insertion loss – 900MHz Ins loss VDD = 0V Pin = +7dBm 25 dB Off insertion loss – 1750MHz Ins loss VDD = 0V Pin = +7dBm 35 dB Efficiency at 900MHz PAE VDD = 3.5V Pin = +6dBm 32 37 % Efficiency at 1750MHz PAE VDD = 3.5V Pin = +9dBm 32 37 % (2) Output power – 1750MHz Power Control Efficiency VSWR Input VSWR at GSM900/DCS1800 2:1 3:1 Harmonics Tx = 900MHz 2nd harmonics After matching cct Po = [email protected] –30 –25 dBc 3rd harmonics After matching cct Po = [email protected] –35 –28 dBc 4th harmonics After matching cct Po = [email protected] –40 –33 dBc –3– CXG1047FN Item Condition Symbol Min. Typ. Max. Unit Harmonics Tx = 1750MHz 2nd harmonics Measured after matching cct Po = [email protected] –25 –20 dBc 3rd harmonics After matching cct Po = [email protected] –30 –25 dBc 4th harmonics After matching cct Po = [email protected] –40 –35 dBc Stability Measured with 10:1 load impedance all angles Over voltage range 3 to 5V and 0dBm to +10dBm input power No oscillation present above –60dBm Load VSWR mismatch at 900MHz and 1800MHz ∗2 10:1 Pin = +7dBm VSWR VDD = 3 to 5V Transmit Noise GSM900 935MHz to 960MHz POUT = 35dBm –79 dBm/ 100kHz DCS1800 1805MHz to 1880MHz POUT = 32dBm –79 dBm/ 100kHz ∗1 Power control is achived by varying VDD1/VDD2 and VDD3. ∗2 When the output matching network is subjected to a 10:1 VSWR at all phases the amplifier shall suffer no permanent damage. –4– CXG1047FN Dual Band Power Amplifier Schematic Pulsed DC supply C1 R1 L1 C15 9 8 10 7 11 6 12 5 C14 13 4 C13 14 3 RF input R5 C3 L9 5mm Slot in O/P track L2 C19 RF output C4 C12 D1 L3 L8 15 2 16 1 L4 C5 C6 C7 C16 Band select R2 C20 L5 R4 C17 CXG1047FN C18 L7 C9 C8 C21 R3 C10 Dual Band Power Amplifier Component Values R1 R2 R3 R4 R5 12Ω 12Ω 160Ω 36Ω 8.2Ω C1 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 47pF 47pF 8.2pF 47pF 1nF 47pF 1.5pF 3.3pF 5.6pF 47pF 2.7/2.7/1.6pF 8.2/1.2pF 47pF 22pF 1nF 47pF 1nF 1nF 2.7pF 8pF L1 L2 L3 L4 L5 L7 L8 L9 68nH 8.2nH 22nH 3.3nH 2.7nH 68nH 68nH 8-turn coilcraft spring type D1 MA4P275-1146 MA/COM –5– C11 CXG1047FN Recommended ALC Schematic Vbat Siliconix IRF9424 RF Out RF In PA Vcc Vcc Voffset From PA Ramp DAC Measurement Circuit – Pulsed DC Supply DC supply TTL inverter G Anritsu GSM measurement set S P-Channel FET D Si9424DY Gate O/P PA-Drain Connections VDD1/VDD2/VDD3 577µs pulse 12.5% duty cycle –6– 3.6V CXG1047FN Output power Output power (@VDD = 3V, Pin = 6dBm) (@VDD = 3.5V, Pin = 6dBm) 38 38 37 37 36 36 35 35 POUT [dBm] POUT [dBm] Example of Representative Characteristics 34 33 34 33 32 32 31 31 30 840 860 880 900 920 30 840 940 860 880 900 920 Frequency [MHz] Frequency [MHz] Output power POUT and PAE vs. Pin (@VDD = 4V, Pin = 6dBm) 940 (@VDD = 3.5V, 900MHz) 38 50 40 POUT [dBm] 37 35 36 30 45 40 POUT [dBm] POUT [dBm] 35 34 33 25 30 20 25 20 15 15 32 10 31 5 10 30 840 5 0 0 860 880 900 920 940 –6 Frequency [MHz] –4 –2 0 2 4 Pin [dBm] –7– 6 8 10 12 PAE [%] 35 PAE [%] CXG1047FN Output power Output power (@VDD = 3V, Pin = 8dBm) (@VDD = 3.5V, Pin = 8dBm) 34 36 35 33 POUT [dBm] POUT [dBm] 34 32 33 32 31 31 30 1700 1720 1740 1760 1780 30 1700 1800 1720 1740 1760 1780 Frequency [MHz] Frequency [MHz] Output power POUT and PAE vs. Pin (@VDD = 4V, Pin = 8dBm) 1800 (@VDD = 3.5V, 1750MHz) 36 50 40 POUT [dBm] 35 35 45 40 30 PAE [%] 33 32 35 25 30 20 25 20 15 15 10 10 31 5 30 1700 5 0 0 1720 1740 1760 1780 1800 –6 –4 –2 0 2 4 Pin [dBm] Frequency [MHz] –8– 6 8 10 12 PAE [%] POUT [dBm] POUT [dBm] 34 CXG1047FN Package Outline Unit: mm HSOF 16PIN(PLASTIC) 0.05 S ∗5.6 ± 0.1 0.45 ± 0.15 0.9 ± 0.1 (5.5) (3.1) A (1.5) (0.7) (0.5) 3.8 ± 0.1 4.4 ± 0.1 (1.75) 9 16 8 1 0.65 (0.2) S (0.2) (4.4) 0.05 M S A (0.2) + 0.05 0.2 0 Solder Plating + 0.1 0.32 – 0.03 B + 0.1 0.26 – 0.03 DETAILB NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.06g SONY CODE HSOF-16P-02 –9– Sony Corporation