SONY ICX429ALL

ICX429ALL
Diagonal 8mm (Type 1/2) CCD Image Sensor for CCIR B/W Video Cameras
Description
The ICX429ALL is an interline CCD solid-state
image sensor suitable for CCIR B/W video cameras
with a diagonal 8mm (Type 1/2) system. Basic
characteristics such as sensitivity, smear, dynamic
range and S/N are improved drastically through the
adoption of EXview HAD CCDTM technology.
This chip features a field period readout system and
an electronic shutter with variable charge-storage
time. This chip is compatible with the pins of the
ICX249AL and has the same drive conditions.
EXview HAD CCD TM has differrent spectral
characteristics from the curreent CCD.
20 pin DIP (Cer-DIP)
Pin 1
2
V
Features
• High sensitivity
• Low smear
3
• High D range (+1dB compared with the ICX249AL)
40
H
Pin 11
• High S/N
• High resolution and low dark current
Optical black position
• Excellent antiblooming characteristics
(Top View)
• Continuous variable-speed shutter
• Substrate bias:
Adjustment free (external adjustment also possible with 6 to 14V)
• Reset gate pulse: 5Vp-p adjustment free (drive also possible with 0 to 9V)
• Horizontal register: 5V drive
12
Device Structure
• Interline CCD image sensor
• Optical size:
Diagonal 8mm (Type 1/2)
• Number of effective pixels: 752 (H) × 582 (V) approx. 440K pixels
• Total number of pixels:
795 (H) × 596 (V) approx. 470K pixels
• Chip size:
7.40mm (H) × 5.95mm (V)
• Unit cell size:
8.6µm (H) × 8.3µm (V)
• Optical black:
Horizontal (H) direction: Front 3 pixels, rear 40 pixels
Vertical (V) direction:
Front 12 pixels, rear 2 pixels
• Number of dummy bits:
Horizontal 22
Vertical 1 (even fields only)
• Substrate material:
Silicon
TM
∗ EXview HAD CCD is a trademark of Sony Corporation.
EXview HAD CCD is a CCD that drastically improves light efficiency by including near infrared light region as a basic structure of
HAD (Hole-Accumulation-Diode) sensor.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E01510A29
ICX429ALL
VDD
GND
VL
Vφ1
GND
φSUB
Vφ2
Vφ3
Vφ4
10
9
8
7
6
5
4
3
2
1
Vertical Register
VOUT
Block Diagram and Pin Configuration
(Top View)
Note)
Horizontal Register
14
15
16
17
18
19
20
GND
RD
φRG
NC
Hφ1
Hφ2
VDSUB
13
GND
12
NC
11
NC
Note)
: Photo sensor
Pin Description
Pin No. Symbol
Description
Pin No. Symbol
Description
1
Vφ4
Vertical register transfer clock
11
NC
2
Vφ3
Vertical register transfer clock
12
VDSUB
3
Vφ2
Vertical register transfer clock
13
NC
4
φSUB
Substrate clock
14
GND
GND
5
GND
GND
15
GND
GND
6
Vφ1
Vertical register transfer clock
16
RD
Reset drain bias
7
VL
Protective transistor bias
17
φRG
Reset gate clock
8
GND
GND
18
NC
9
VDD
Output circuit supply voltage
19
Hφ1
Horizontal register transfer clock
10
VOUT
Signal output
20
Hφ2
Horizontal register transfer clock
–2–
Substrate bias circuit supply voltage
ICX429ALL
Absolute Maximum Ratings
Item
Ratings
Unit
–0.3 to +50
V
VDD, VRD, VDSUB, VOUT – GND
–0.3 to +18
V
VDD, VRD, VDSUB, VOUT – φSUB
–55 to +10
V
Vφ1, Vφ2, Vφ3, Vφ4 – GND
–15 to +20
V
Vφ1, Vφ2, Vφ3, Vφ4 – φSUB
to +10
V
Voltage difference between vertical clock input pins
to +15
V
Voltage difference between horizontal clock input pins
to +17
V
Hφ1, Hφ2 – Vφ4
–17 to +17
V
φRG – GND
–10 to +15
V
φRG – φSUB
–55 to +10
V
VL – φSUB
–65 to +0.3
V
Pins other than GND and φSUB – VL
–0.3 to +30
V
Storage temperature
–30 to +80
°C
Operating temperature
–10 to +60
°C
Substrate clock φSUB – GND
Supply voltage
Clock input voltage
∗1 +27V (Max.) when clock width < 10µs, clock duty factor < 0.1%.
–3–
Remarks
∗1
ICX429ALL
Bias Conditions 1 [when used in substrate bias internal generation mode]
Item
Symbol
Min.
Typ.
Max.
Unit
Output circuit supply voltage
VDD
14.55
15.0
15.45
V
Reset drain voltage
VRD
14.55
15.0
15.45
V
Protective transistor bias
VL
Substrate bias circuit supply voltage
VDSUB
15.45
V
Substrate clock
φSUB
Remarks
VRD = VDD
∗1
14.55
15.0
∗2
∗1 VL setting is the VVL voltage of the vertical transfer clock waveform, or the same supply voltage as the VL
power supply for the V driver should be used. (When CXD1267AN is used.)
∗2 Do not apply a DC bias to the substrate clock pin, because a DC bias is generated within the CCD.
Bias Conditions 2 [when used in substrate bias external adjustment mode]
Item
Symbol
Min.
Typ.
Max.
Unit
Remarks
Output circuit supply voltage
VDD
14.55
15.0
15.45
V
Reset drain voltage
VRD
14.55
15.0
15.45
V
VRD = VDD
Protective transistor bias
VL
∗3
Substrate bias circuit supply voltage
VDSUB
∗4
Substrate voltage adjustment range
VSUB
6.0
14.0
V
∗5
Substrate voltage adjustment precision
∆VSUB
–3
+3
%
∗5
∗3 VL setting is the VVL voltage of the vertical transfer clock waveform, or the same supply voltage as the VL
power supply for the V driver should be used. (When CXD1267AN is used.)
∗4 Connect to GND or leave open.
∗5 The setting value of the substrate voltage (VSUB) is indicated on the back of the image sensor by a
special code. When adjusting the substrate voltage externally, adjust the substrate voltage to the indicated
voltage. The adjustment precision is ±3%. However, this setting value has not significance when used in
substrate bias internal generation mode.
VSUB code — one character indication
Code and optimal setting correspond to each other as follows.
VSUB code
E
Optimal setting 6.0
f
G
h
J
K
L
m
6.5
7.0
7.5
8.0
8.5
9.0
N
P
Q
R
S
T
DC Characteristics
Output circuit supply current
Symbol
V
W
9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0
<Example> "L" → VSUB = 9.0V
Item
U
Min.
IDD
–4–
Typ.
Max.
Unit
5.0
10.0
mA
Remarks
ICX429ALL
Clock Voltage Conditions
Item
Readout clock voltage
Vertical transfer clock
voltage
Horizontal transfer
clock voltage
Symbol
Min.
Waveform
diagram
Remarks
VVT
14.55 15.0 15.45
V
1
VVH1, VVH2
–0.05
0
0.05
V
2
VVH3, VVH4
–0.2
0
0.05
V
2
VVL1, VVL2,
VVL3, VVL4
–9.6 –9.0 –8.5
V
2
VVL = (VVL3 + VVL4)/2
VφV
8.3
2
VφV = VVHn – VVLn (n = 1 to 4)
9.0
| VVH1 – VVH2 |
9.65 Vp-p
0.1
V
2
VVH = (VVH1 + VVH2)/2
VVH3 – VVH
–0.25
0.1
V
2
VVH4 – VVH
–0.25
0.1
V
2
VVHH
0.5
V
2
High-level coupling
VVHL
0.5
V
2
High-level coupling
VVLH
0.5
V
2
Low-level coupling
VVLL
0.5
V
2
Low-level coupling
VφH
4.75
5.0
VHL
–0.05
0
VφRG
0.05
4.5
5.0
VRGLH – VRGLL
Substrate clock voltage VφSUB
5.25 Vp-p
∗1
VRGL
Reset gate clock
voltage∗1
Typ. Max. Unit
3
V
3
V
4
5.5 Vp-p
4
0.8
4
V
23.0 24.0 25.0 Vp-p
Low-level coupling
5
∗1 Input the reset gate clock without applying a DC bias. In addition, the reset gate clock can also be driven
with the following specifications.
Item
Reset gate clock
voltage
Symbol
Min.
Typ. Max. Unit
VRGL
–0.2
0
VφRG
8.5
9.0
0.2
V
9.5 Vp-p
–5–
Waveform
diagram
4
4
Remarks
ICX429ALL
Clock Equivalent Circuit Constant
Symbol
Item
Typ.
Min.
Max.
Unit
CφV1, CφV3
3300
pF
CφV2, CφV4
3300
pF
CφV12, CφV34
820
pF
CφV23, CφV41
330
pF
Capacitance between horizontal transfer clock CφH1
and GND
CφH2
120
pF
91
pF
Capacitance between horizontal transfer clocks
CφHH
47
pF
Capacitance between reset gate clock and GND
CφRG
11
pF
Capacitance between substrate clock and GND
CφSUB
680
pF
R1, R3
75
Ω
R2, R4
82
Ω
RGND
68
Ω
Capacitance between vertical transfer clock
and GND
Capacitance between vertical transfer clocks
Vertical transfer clock series resistor
Vertical transfer clock ground resistor
Vφ2
Vφ1
CφV12
R1
R2
Hφ1
CφV1
CφV23
CφV4
Vφ4
Hφ2
CφHH
CφV2
CφV41
R4
Remarks
RGND
CφV34
CφH1
CφH2
CφV3
R3
Vφ3
Vertical transfer clock equivalent circuit
Horizontal transfer clock equivalent circuit
–6–
ICX429ALL
Drive Clock Waveform Conditions
(1) Readout clock waveform
100%
90%
VVT
φM
φM
2
10%
0%
tr
twh
0V
tf
(2) Vertical transfer clock waveform
Vφ1
Vφ3
VVH1
VVHH
VVH
VVHH
VVHL
VVHL
VVHL
VVL1
VVHH
VVHH
VVH3
VVH
VVHL
VVL3
VVLH
VVLH
VVLL
VVLL
VVL
VVL
Vφ2
Vφ4
VVHH
VVHH
VVH
VVH
VVHH
VVHH
VVHL
VVHL
VVH2 VVHL
VVH4
VVLH
VVL2VVLH
VVLL
VVLL
VVL4
VVL
VVH = (VVH1 + VVH2)/2
VVL = (VVL3 + VVL4)/2
VφV = VVHn – VVLn (n = 1 to 4)
VVHL
–7–
VVL
ICX429ALL
(3) Horizontal transfer clock waveform
tr
twh
tf
90%
VφH
twl
10%
VHL
tr
(4) Reset gate clock waveform
twh
tf
VRGH
twl
VφRG
Point A
RG waveform
VRGL + 0.5V
VRGLH
VRGL
VRGLL
VRGLm
Hφ1 waveform
+2.5V
VRGLH is the maximum value and VRGLL is the minimum value of the coupling waveform during the period from
Point A in the above diagram until the rising edge of RG. In addition, VRGL is the average value of VRGLH and
VRGLL.
VRGL = (VRGLH + VRGLL)/2
Assuming VRGH is the minimum value during the period twh, then:
VφRG = VRGH – VRGL
Negative overshoot level during the falling edge of RG is VRGLm.
(5) Substrate clock waveform
100%
90%
φM
VφSUB
φM
2
10%
VSUB
0%
tr
twh
–8–
tf
ICX429ALL
Clock Switching Characteristics
Item
Symbol
VT
Vertical transfer
clock
Vφ1, Vφ2,
Vφ3, Vφ4
Horizontal
transfer clock
Readout clock
During
imaging
twh
φSUB
tf
0.5
2.3 2.5
20
20
15
5.38
19
Unit
Remarks
µs During readout
0.5
250 ns ∗1
15
During
Hφ1
parallel-serial
Hφ2
conversion
Substrate clock
tr
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Hφ
Reset gate clock φRG
twl
15
0.01
0.01
5.38
0.01
0.01
51
3
3
19
ns
∗2
µs
11
13
1.5 1.8
0.5
ns
0.5 µs
∗1 When vertical transfer clock driver CXD1267AN is used.
∗2 tf ≥ tr – 2ns.
Item
Symbol
Horizontal transfer clock
Hφ1, Hφ2
two
Min.
Typ.
16
20
Max.
Unit Remarks
ns
∗3
∗3 The overlap period for twh and twl of horizontal transfer clocks Hφ1 and Hφ2 is two.
–9–
During drain
charge
ICX429ALL
Image Sensor Characteristics
(Ta = 25°C)
Unit
Measurement
method
1400
mV
1
5500
mV
2
mV
3
–115
dB
4
20
%
5
Zone 0 and I
25
%
5
Zone 0 to II'
Vdt
2
mV
6
Ta = 60°C
Dark signal shading
∆Vdt
1
mV
7
Ta = 60°C
Flicker
F
2
%
8
Lag
Lag
0.5
%
9
Item
Symbol
Min.
Typ.
Sensitivity1
S1
1120
Sensitivity2
S2
4500
Saturation signal
Vsat
1000
Smear
Sm
Video signal shading
SH
Dark signal
Max.
–126
Zone Definition of Video Signal Shading
752 (H)
12
12
8
H
8
V
10
H
8
Zone 0, I
582 (V)
6
Zone II, II'
V
10
Ignored region
Effective pixel region
– 10 –
Remarks
Ta = 60°C
ICX429ALL
Image Sensor Characteristics Measurement Method
Measurement conditions
1) In the following measurements, the device drive conditions are at the typical values of the bias and clock
voltage conditions. (when used with substrate bias external adjustment, set the substrate voltage to the
value indicated on the device.)
2) In the following measurements, spot blemishes are excluded and, unless otherwise specified, the optical
black level (OB) is used as the reference for the signal output, which is taken as the value of Y signal output
or chroma signal output of the measurement system.
Definition of standard imaging conditions
1) Standard imaging condition I:
Use a pattern box (luminance 706cd/m2, color temperature of 3200K halogen source) as a subject. (Pattern
for evaluation is not applicable.) Use a testing standard lens with CM500S (t = 1.4mm) as an IR cut filter and
image at F8. The luminous intensity to the sensor receiving surface at this point is defined as the standard
sensitivity testing luminous intensity.
2) Standard imaging condition II:
This indicates the standard imaging condition I with the IR cut filter removed.
3) Standard imaging condition III:
Image a light source (color temperature of 3200K) with a uniformity of brightness within 2% at all angles.
Use a testing standard lens and the luminous intensity is adjusted to the value indicated in each testing
item by the lens diaphragm. (IR cut filter is not spplicable.)
1. Sensitivity1
Set to standard imaging condition I. After selecting the electronic shutter mode with a shutter speed of
1/250s, measure the signal output (VS1) at the center of the screen and substitute the value into the
following formula.
S1 = VS1 × 250 [mV]
50
2. Sensitivity2
Set to standard imaging condition II. After selecting the electronic shutter mode with a shutter speed of
1/1000s, measure the signal output (VS2) at the center of the screen and substitute the value into the
following formula.
S2 = VS2 ×
1000
[mV]
50
3. Saturation signal
Set to standard imaging condition III. After adjusting the luminous intensity to 10 times the intensity with
average value of the signal output, 200mV, measure the minimum value of the signal output.
– 11 –
ICX429ALL
4. Smear
Set to standard imaging condition III. With the lens diaphragm at F5.6 to F8, adjust the luminous intensity to
500 times the intensity with average value of the signal output, 200mV. When the readout clock is stopped
and the charge drain is executed by the electronic shutter at the respective H blankings, measure the
maximum value VSm [mV] of the signal output and substitute the value into the following formula.
Sm = 20 × log VSm × 1 ×
500
200
1
10
[dB] (1/10V method conversion value)
5. Video signal shading
Set to standard imaging condition III. With the lens diaphragm at F5.6 to F8, adjust the luminous intensity
so that the average value of the signal output is 200mV. Then measure the maximum (Vmax [mV]) and
minimum (Vmin [mV]) values of the signal output and substitute the values into the following formula.
SH = (Vmax – Vmin)/200 × 100 [%]
6. Dark signal
Measure the average value of the signal output (Vdt [mV]) with the device ambient temperature 60°C and
the device in the light-obstructed state, using the horizontal idle transfer level as a reference.
7. Dark signal shading
After measuring 6, measure the maximum (Vdmax [mV]) and minimum (Vdmin [mV]) values of the dark
signal output and substitute the values into the following formula.
∆Vdt = Vdmax – Vdmin [mV]
8. Flicker
Set to standard imaging condition III. Adjust the luminous intensity so that the average value of the signal
output is 200mV, and then measure the difference in the signal level between fields (∆Vf [mV]). Then
substitute the value into the following formula.
Fy = (∆Vf/200) × 100 [%]
9. Lag
Adjust the signal output value generated by strobe light to 200mV. After setting the strobe light so that it
strobes with the following timing, measure the residual signal (Vlag). Substitute the value into the following
formula.
Lag = (Vlag/200) × 100 [%]
FLD
V1
Light
Strobe light
timing
signal output 200mV
Output
– 12 –
Ylag (lag)
13
12
11
7
8
9
10
XSG1
XV3
XSG2
XV4
RG
Hφ2
Hφ1
14
6
XV1
22/20V
16
5
XV2
15
17
4
XSUB
CXD1267AN
18
22/16V
1/35V
0.01
ICX429
(BOTTOM VIEW)
8
7
6
5
4
2
3
1
Vφ4
Hφ2
3
100k
Vφ3
Hφ1
19
Vφ2
NC
9 10
3.9k
100
0.01
20 19 18 17 16 15 14 13 12 11
φRG
2
φSUB
RD
20
Vφ1
GND
GND
1
VL
GND
VOUT
15V
GND
NC
VDD
VDSUB
– 13 –
NC
Drive Circuit 1 (substrate bias internal generation mode)
3.3/20V
1
0.01
[∗A]
CCD OUT
1M
3.3/16V
–9V
ICX429ALL
16
5
XV2
12
11
8
9
10
XV3
XSG2
XV4
RG
Hφ2
Hφ1
13
7
22/20V
14
6
XV1
XSG1
15
17
4
XSUB
CXD1267AN
18
3
22/16V
1/35V
1/35V
0.01
1/35V
ICX429
(BOTTOM VIEW)
8
7
6
5
4
2
0.1
3
1
100k 27k
Vφ4
Hφ2
19
Vφ3
Hφ1
9 10
39k
3.9k
100
0.01
20 19 18 17 16 15 14 13 12 11
φRG
2
56k
Vφ2
NC
RD
20
φSUB
270k
Vφ1
GND
GND
1
0.1
VL
GND
VOUT
15V
GND
NC
VDD
VDSUB
– 14 –
NC
Drive Circuit 2 (substrate bias external adjustment mode)
3.3/20V
0.1
15k
47k
15k
0.01
[∗A]
CCD OUT
1M
3.3/16V
–9V
ICX429ALL
ICX429ALL
Spectral Sensitivity Characteristics (Excludes lens characteristics and light source characteristics)
1.0
0.9
0.8
Relative Response
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
Wave Length [nm]
800
900
1000
Sensor Readout Clock Timing Chart
V1
2.5
V2
Odd Field
V3
V4
33.6
1.5
2.6 2.5 2.5
0.2
V1
V2
Even Field
V3
V4
Unit: µs
– 15 –
– 16 –
CCD
OUT
V4
V3
V2
V1
HD
BLK
VD
FLD
581
582
625
1
2
3
4
5
620
Drive Timing Chart (Vertical Sync)
15
2 4 6
1 3 5
2 4 6
1 3 5
315
582
581
330
1 3 5
2 4 6
335
1 3 5
2 4 6
ICX429ALL
340
325
320
310
25
20
10
– 17 –
SUB
V4
V3
V2
V1
RG
H2
H1
BLK
HD
20
10
3
5
750
752
1
745
Drive Timing Chart (Horizontal Sync)
ICX429ALL
20
10
22
1
2
3
1
2
3
20
10
1
2
3
5
40
30
ICX429ALL
Notes on Handling
1) Static charge prevention
CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following
protective measures.
a) Either handle bare handed or use non-chargeable gloves, clothes or material.
Also use conductive shoes.
b) When handling directly use an earth band.
c) Install a conductive mat on the floor or working table to prevent the generation of static electricity.
d) Ionized air is recommended for discharge when handling CCD image sensor.
e) For the shipment of mounted substrates, use boxes treated for the prevention of static charges.
2) Soldering
a) Make sure the package temperature does not exceed 80°C.
b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a ground 30W
soldering iron and solder each pin in less than 2 seconds. For repairs and remount, cool sufficiently.
c) To dismount an image sensor, do not use a solder suction equipment. When using an electric desoldering
tool, use a thermal controller of the zero cross On/Off type and connect it to ground.
3) Dust and dirt protection
Image sensors are packed and delivered by taking care of protecting its glass plates from harmful dust and
dirt. Clean glass plates with the following operation as required, and use them.
a) Perform all assembly operations in a clean room (class 1000 or less).
b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface, blow it off with an air blower. (For dirt stuck through static electricity ionized
air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the grease stained. Be careful not to scratch the glass.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
e) When a protective tape is applied before shipping, just before use remove the tape applied for
electrostatic protection. Do not reuse the tape.
4) Installing (attaching)
a) Remain within the following limits when applying a static load to the package. Do not apply any load more
than 0.7mm inside the outer perimeter of the glass portion, and do not apply any load or impact to limited
portions. (This may cause cracks in the package.)
Upper ceramic
Lower ceramic
39N
29N
29N
0.9Nm
Low melting
point glass
Compressive strength
Shearing strength
Tensile strength
Torsional strength
b) If a load is applied to the entire surface by a hard component, bending stress may be generated and the
package may fracture, etc., depending on the flatness of the ceramic portions. Therefore, for installation,
use either an elastic load, such as a spring plate, or an adhesive.
– 18 –
ICX429ALL
c) The adhesive may cause the marking on the rear surface to disappear, especially in case the regulated
voltage value is indicated on the rear surface. Therefore, the adhesive should not be applied to this area,
and indicated values should be transferred to other locations as a precaution.
d) The upper and lower ceramic are joined by low melting point glass. Therefore, care should be taken not to
perform the following actions as this may cause cracks.
• Applying repeated bending stress to the outer leads.
• Heating the outer leads for an extended period with a soldering iron.
• Rapidly cooling or heating the package.
• Applying any load or impact to a limited portion of the low melting point glass using tweezers or other
sharp tools.
• Prying at the upper or lower ceramic using the low melting point glass as a fulcrum.
Note that the same cautions also apply when removing soldered products from boards.
e) Acrylate anaerobic adhesives are generally used to attach CCD image sensors. In addition, cyanoacrylate instantaneous adhesives are sometimes used jointly with acrylate anaerobic adhesives. (reference)
5) Others
a) Do not expose to strong light (sun rays) for long periods. For continuous using under cruel condition
exceeding the normal using condition, consult our company.
b) Exposure to high temperature or humidity will affect the characteristics. Accordingly avoid storage or
usage in such conditions.
c) This CCD image sensor has sensitivity in the near infrared srea. Its focus may not match in the same
condition under visible ligth / near infrared ligth bocause of aberration.
– 19 –
3
0.55
~
~
– 20 –
3
2.6g
AS-B14-01(E)
PACKAGE MASS
42 ALLOY
DRAWING NUMBER
LEAD MATERIAL
TIN PLATING
LEAD TREATMENT
11.55
Cer-DIP
0.51
PACKAGE MATERIAL
PACKAGE STRUCTURE
B
0.7
7.55
0.4
0.4
1
20
V
9.0
0.3
M
1.778
14.6
18.0 ± 0.4
H
A
~
3
10
11
B'
0.8
0.46
C
1.4
10
11
(0.7R)
(1.0)
φ1.4
1
20
(1.7)
9. The notch and the hole on the bottom must not be used for reference of fixing.
8. The thickness of the cover glass is 0.75mm, and the refractive index is 1.5.
7. The tilt of the effective image area relative to the bottom “C” is less than 60µm.
6. The height from the bottom “C” to the effective image area is 1.41 ± 0.15mm.
5. The rotation angle of the effective image area relative to H and V is ± 1˚.
4. The center of the effective image area, relative to “B” and “B'” is
(H, V) = (9.0, 7.55) ± 0.15mm.
3. The bottom “C” of the package is the height reference.
2. The two points “B” of the package are the horizontal reference.
The point “B'” of the package is the vertical reference.
1. “A” is the center of the effective image area.
20pin DIP (600mil)
0˚ to 9˚
0.25
1.27
Unit: mm
15.1 ± 0.3
0.70
15.24
3.26 ± 0.3
4.0 ± 0.3
(4.0)
Package Outline
ICX429ALL
Sony Corporation