CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 24 22 20 18 16 14 12 10 8 6 4 2 0 Main Features Broad band performance 18-31GHz 2.5dB noise figure 22dB gain, ± 1dB gain flatness Low DC power consumption, 55mA 20dBm 3rd order intercept point Chip size : 2,170 x 1,270x 0.1mm 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain ∆G Min 18 Typ Max Unit 2.5 3.5 dB 22 ±1 Gain flatness dB ± 1.5 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. :DSCHA20699273 - 8-Sep-99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-31GHz Low Noise Amplifier CHA2069 Electrical Characteristics Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd Symbol Fop G Parameter Min Operating frequency range 18 Gain (1) 18 Typ Max Unit 31 Ghz 22 dB ∆G Gain flatness (1) ±1 ± 1.5 dB NF Noise figure (1) 2.5 3.5 dB VSWRin Input VSWR (1) 2.0:1 2.5:1 2:0:1 2.5:1 VSWRout Ouput VSWR (1) IP3 3rd order intercept point Output power at 1dB gain compression P1dB Id Drain bias current (2) 20 dBm 10 dBm 55 75 mA (1) These values are representative on-wafer measurements that are made without bonding wires at the RF ports. (2) This current is the typical value from the low noise low consumption biasing ( B & D & E grounded ). Absolute Maximum Ratings (3) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage (5) 5.0 V Pin Maximum peak input power overdrive (4) +15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options pp7 Ref. :DSCHA20699273 - 8-Sep-99 2 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Typical Result Chip Typical Response ( On wafer Sij ) : Tamb = +25°C VD=4.5V ID =+55 mA F(GHz) 2 4 6 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 mod pha dB deg -0.01 -34.9 -0.01 -71.6 -0.15 -112.7 -0.74 -164.6 -3.30 128.2 -5.18 90.4 -6.94 50.5 -7.98 11.7 -8.31 -23.4 -8.58 -54.0 -9.01 -77.8 -9.66 -97.0 -10.27 -112.2 -11.44 -125.0 -12.60 -132.7 -13.74 -137.8 -14.44 -140.0 -15.21 -142.8 -16.15 -144.4 -16.91 -142.9 -17.29 -139.8 -16.84 -139.8 -16.95 -147.5 -20.07 -167.5 -30.52 -155.1 -27.00 -17.8 -14.97 -22.9 -9.33 -43.0 -5.88 -63.5 -3.76 -82.7 -2.43 -100.5 -1.79 -116.2 -1.35 -129.6 -1.14 -140.6 -0.83 -151.3 Ref. :DSCHA20699273 - 8-Sep-99 S12 mod Pha dB Deg -83.58 -127.8 -76.83 108.8 -66.00 60.8 -71.92 -16.4 -70.19 -49.4 -59.14 -73.7 -54.33 -122.3 -51.51 -169.1 -50.07 149.9 -49.42 116.2 -49.02 87.9 -49.24 56.9 -49.74 38.9 -48.80 9.0 -50.27 -20.2 -50.08 -36.8 -50.55 -62.5 -51.54 -81.8 -51.68 -101.2 -53.88 -123.9 -55.05 -131.7 -56.50 -130.9 -54.45 -134.4 -52.53 -163.2 -54.62 -174.1 -53.75 179.4 -53.19 178.6 -51.06 149.6 -52.88 130.3 -49.61 134.9 -47.83 116.4 -52.98 85.7 -46.64 67.5 -59.58 31.3 -54.65 61.1 S21 mod pha dB deg -63.71 -13.4 -58.71 67.0 -23.56 -164.4 1.54 82.3 12.91 -27.1 16.99 -80.0 19.60 -134.0 21.14 175.3 21.66 129.6 22.18 87.5 22.07 51.3 22.35 17.5 22.25 -13.3 22.30 -43.3 22.38 -72.0 22.38 -99.8 22.60 -127.6 22.72 -155.4 22.60 176.7 22.65 148.6 22.52 121.6 22.33 95.0 22.31 68.4 22.38 40.0 22.26 11.1 22.16 -19.5 21.80 -52.8 21.01 -87.4 19.68 -122.9 17.65 -157.6 15.15 170.2 12.27 141.0 9.27 114.2 6.10 90.1 2.95 68.0 3 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S22 mod pha dB deg -1.00 -119.2 -1.47 175.5 -2.32 127.4 -3.60 81.3 -5.05 47.4 -5.37 16.5 -7.20 -11.0 -9.15 -34.1 -11.20 -56.3 -13.60 -77.5 -16.65 -96.6 -21.01 -115.6 -28.25 -138.6 -29.93 70.6 -20.66 26.9 -16.29 8.9 -13.67 -8.6 -12.01 -23.6 -10.83 -36.2 -10.08 -48.8 -9.73 -59.3 -9.58 -69.9 -9.80 -78.4 -10.82 -83.0 -11.30 -83.9 -11.94 -81.7 -11.76 -73.8 -10.65 -68.9 -9.14 -68.4 -7.96 -71.3 -6.97 -75.0 -6.11 -79.3 -5.37 -83.2 -4.70 -87.6 -4.13 -92.4 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 4.5V ; B , D & E=GND; Id = 55mA 30 5.0 25 4.5 20 4.0 15 3.5 10 3.0 5 2.5 0 2.0 -5 1.5 -10 1.0 -15 0.5 -20 0.0 4 6 8 10 12 dBS11 14 16 18 dBS21 20 22 24 dBS22 26 28 30 Nf 32 34 36 38 40 Frequency ( GHz ) Typical Gain and Matching measurements on wafer. 16 14 12 10 8 6 4 2 0 18 20 22 24 26 28 30 Frequency ( GHz ) Typical Poutput Power -1dB Ref. :DSCHA20699273 - 8-Sep-99 measurements on wafer. 4 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Typical Test-Jig Results Circuit Typical Response ( Test-Jig ) : Tamb = +25°C Vd = 4.5V ; B ,D & E =Pads grounded ; Id = 55mA (G1, G2, A, C & F non connected ) These values are representative of the package assembly with input and output bonding wires of typically 0.15nH. 30 25 20 15 10 5 0 -5 -10 -15 -20 4 6 8 10 Gain 12 S11 14 16 18 20 22 24 26 28 30 32 S22 34 36 38 40 Frequency ( GHz ) Typical Linear measurements in test-jig. 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 18 20 22 24 26 28 30 32 Frequency ( GHz ) Typical NOISE Figure measurements in test-jig. Ref. :DSCHA20699273 - 8-Sep-99 5 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Chip schematic and Pad Identification Pad Size :100/80um, chip thickness 100um Dimensions : 2170 x 1270µm ± 35µm 2170 1575 1325 1075 825 575 325 1270 372 372 720 870 1020 1170 1320 1470 1620 Ref. :DSCHA20699273 - 8-Sep-99 6 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Typical Chip Assembly Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4.5V and B, D, E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = 10dBm Typical. ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = 12dBm Typical.. Ref. :DSCHA20699273 - 8-Sep-99 7 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-31GHz Low Noise Amplifier CHA2069 Ordering Information Chip form : CHA2069-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. :DSCHA20699273 - 8-Sep-99 8 /8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice