AO6602 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 30V ID = 3.1A (VGS = 10V) -2.7A (VGS = -10V) The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical. RDS(ON) < 75mΩ (VGS = 10V) < 100mΩ(VGS = -10V) < 115mΩ (VGS = 4.5V) < 180mΩ(VGS = -4.5V) D2 D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 G1 D1 S1 D2 G2 S1 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range ±20 ±20 3.1 -2.7 ID 2.4 -2.1 IDM 12 -12 1.15 1.15 0.73 0.73 -55 to 150 -55 to 150 PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -30 Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units V V A W °C Units °C/W °C/W °C/W AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 10 TJ=55°C VGS=10V, ID=3.1A 4.5 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.79 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.1A VGS=10V, VDS=15V, RL=4.7Ω, RGEN=3Ω µA 100 nA 3 V 75 78 VDS=5V, ID=3.1A Forward Transconductance Units A 88 gFS Coss 1.9 VGS=4.5V, ID=2A VSD IS 5 54 TJ=125°C Static Drain-Source On-Resistance Max V VDS=24V, VGS=0V IDSS RDS(ON) Typ 115 mΩ mΩ S 1 V 2.5 A 240 pF 40 pF 20 pF 2.3 3 Ω 6.5 8.5 nC 3.1 4 nC 1.2 nC 1.6 nC 3.3 ns 2.5 ns 13.2 ns 1.7 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs 9.4 Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 3.5 12 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha and Omega Semiconductor, Ltd. AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 10 15 10V 8V 12 5V 8 6V 6 9 4V 6 ID(A) ID (A) VDS=5V 4.5V 4 3.5V 125°C 2 3 25°C VGS=3V 0 0 0 1 2 3 4 1.5 5 2 2.5 3.5 4 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 120 1.8 100 Normalized On-Resistance 110 RDS(ON) (mΩ) 3 VGS=4.5V 90 80 70 60 50 VGS=10V 40 VGS=10V ID=3.1A 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 250 ID=3.1A 200 1.0E+00 125° IS (A) RDS(ON) (mΩ) 1.0E-01 150 125°C 100 1.0E-02 25° 1.0E-03 50 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 400 10 VDS=15V ID=3.1A Capacitance (pF) VGS (Volts) 8 6 4 2 300 Ciss 200 Coss 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 15 10µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss 100 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. 100 1000 AO6602 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -5 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.7A 4.1 Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -0.81 260 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.7A ±100 nA -3 V 100 110 VDS=-5V, ID=-2.7A DYNAMIC PARAMETERS Ciss Input Capacitance µA A 130 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss -1.9 VGS=-4.5V, I D=-2A Forward Transconductance Coss -5 77 TJ=125°C VSD Units V TJ=55°C gFS Max -1 VDS=-24V, VGS=0V IDSS IS Typ 180 mΩ mΩ S -1 V -2 A 312 pF 55 pF 44 pF 4.3 5 Ω 5.8 7 nC 3 4 nC 0.78 nC Gate Drain Charge 1.6 nC Turn-On DelayTime 7 ns VGS=-10V, VDS=-15V, RL=5.6Ω, RGEN=3Ω 6 ns 15 ns 7.5 trr Body Diode Reverse Recovery Time IF=-2.7A, dI/dt=100A/µs 12.5 Qrr Body Diode Reverse Recovery Charge IF=-2.7A, dI/dt=100A/µs 5.5 ns 15 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6602 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 20 -10V -7V VDS=-5V -9V 25°C -5V -ID(A) -ID (A) -6V -8V 15 8 10 VGS=-4.5V 6 125°C 4 -4V 5 2 -3.5V -3V 0 0 0 1 2 3 4 5 1 2 4 5 6 1.6 Normalized On-Resistance RDS(ON) (mΩ) 200 VGS=-4.5V 150 100 VGS=-10V 50 VGS=-10V ID=-2.7A 1.4 1.2 VGS=-4.5V ID=-2A 1 0.8 0 1 2 3 4 5 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 300 1.0E+00 250 ID=-2.7A 1.0E-01 200 125°C -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 150 100 25°C 1.0E-02 125°C 25°C 1.0E-03 1.0E-04 50 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6602 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 500 10 VDS=-15V ID=-2.7A 400 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 0 1 2 3 4 5 6 Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 TJ(Max)=150°C TA=25°C 20 25 30 TJ(Max)=150°C TA=25°C 15 10.0 10µs RDS(ON) limited 0.1s 100µs 1ms 1.0 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 1s ZθJA Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000