CET CEPF634_10

CEPF634/CEBF634
CEIF634/CEFF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEPF634
250V
0.45Ω
8.1A
10V
CEBF634
250V
0.45Ω
8.1A
10V
CEIF634
250V
0.45Ω
8.1A
CEFF634
250V
0.45Ω
8.1A
10V
d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TC = 25 C
ID
@ TC = 100 C
Drain Current-Pulsed a
IDM e
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
TJ,Tstg
TO-220F
250
Units
V
±20
V
8.1
8.1
d
A
5.1
32
5.1 d
32 d
A
74
38
W
0.3
W/ C
0.59
A
C
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1.7
3.3
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 2. 2010.June
http://www.cetsemi.com
Details are subject to change without notice .
1
CEPF634/CEBF634
CEIF634/CEFF634
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
250
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 250V, VGS = 0V
25
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
0.45
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 4.5A
gFS
VDS = 50V, ID = 5.1A
2
4.4
S
925
pF
95
pF
20
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 125V, ID = 5.6A,
VGS = 10V, RGEN = 12Ω
16
32
ns
3.5
7
ns
38
76
ns
Turn-Off Fall Time
tf
4
8
ns
Total Gate Charge
Qg
18
23
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 200V, ID = 5.6A,
VGS = 10V
3
nC
5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
IS f
b
VSD
VGS = 0V, IS = 8.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package IS(max) = 6A .
g .UIS condition Vdd=25V L=2mH Rg=25ohm Ias=8.1A .
2
0.9
8.1
A
1.5
V
CEPF634/CEBF634
CEIF634/CEFF634
VGS=10,9,8,7V
10
ID, Drain Current (A)
ID, Drain Current (A)
12
8
VGS=6V
6
4
VGS=5V
2
0
0
1
2
3
4
5
6
10
-1
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
400
200
Coss
Crss
10
20
30
40
50
3.0
2.5
1.VDS=40V
2.Pulse Test
25 C
2
4
6
8
10
ID=5.1A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
Figure 2. Transfer Characteristics
Ciss
0
TJ=150 C
Figure 1. Output Characteristics
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0
VGS, Gate-to-Source Voltage (V)
800
1.2
10
VDS, Drain-to-Source Voltage (V)
1000
1.3
1
VGS=4V
1200
0
10
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=200V
ID=5.6A
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEPF634/CEBF634
CEIF634/CEFF634
6
4
2
0
0
3
6
9
12
15
18
10
1ms
10ms
DC
10
10
21
100ms
1
0
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
0.1
-1
0.05
0.02
10
10
PDM
0.01
Single Pulse
-2
t1
-3
10
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3