CED6355/CEU6355 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -26A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit -60 Units V VGS ±20 V ID -26 A IDM -104 A 50 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.4 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Aug http://www.cetsemi.com CED6355/CEU6355 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -60V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -26A -1 35 42 mΩ VGS = -4.5V, ID = -21A 50 65 mΩ VDS = -10V, ID = -26A 22 S 2020 pF 180 pF 95 pF Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -30V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 15 VDD = -30V, ID = -20A, VGS = -10V, RGEN = 3Ω 30 ns 4 8 ns 47 94 ns Turn-Off Fall Time tf 11 22 ns Total Gate Charge Qg 32.2 42.8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -20A, VGS = -10V 5.7 nC 5.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -26A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 -26 A -1.3 V 6 CED6355/CEU6355 25 35 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,6,4V 20 15 10 -VGS=3V 5 28 21 14 25 C 7 TJ=125 C -55 C 0 0 0 1 2 3 4 5 6 0 1000 Coss 500 Crss 5 10 15 20 25 30 6 2.2 1.9 ID=-26A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1500 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 5 Figure 2. Transfer Characteristics 2000 1.2 4 Figure 1. Output Characteristics Ciss 1.3 3 -VGS, Gate-to-Source Voltage (V) 2500 0 2 -VDS, Drain-to-Source Voltage (V) 3000 0 1 10 10 10 10 -25 0 25 50 75 100 125 150 3 VGS=0V 2 1 0 0.3 0.6 0.9 1.2 1.5 1.8 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =-30V DS ID=-20A 10 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CED6355/CEU6355 8 6 4 2 10 10 10 10 0 0 10 20 30 40 3 2 100µs 1ms 10ms DC 1 6 0 -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2