CHENMKO CHT4403N1PT

CHENMKO ENTERPRISE CO.,LTD
CHT4403N1PT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 40 Volts
CURRENT 600 mAmpere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
FBPT-923
* Small surface mounting type. (FBPT-923)
* High current gain.
0.5±0.05
* Low colloector-emitter saturation.
* High saturation current capability.
1.0±0.05
0.37(REF.)
CONSTRUCTION
1.0±0.05
* PNP transistors in one package.
0.25(REF.)
0.05±0.04
0.68±0.05
0.42±0.05
C
CIRCUIT
(3)
0.3±0.05
(1) B
0.26±0.05
E (2)
FBPT-923
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-40
V
VCEO
collector-emitter voltage
open base
−
-40
V
open collector
−
-5
V
−
-600
mA
−
100
mW
+150
°C
VEBO
emitter-base voltage
IC
collector current (DC)
Ptot
total power dissipation
Tstg
storage temperature
−65
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
2. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 2
2006-07
RATING CHARACTERISTIC CURVES ( CHT4403N1PT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
collector-emitter breakdown voltage
-40
-40
−
V(BR)CEO
IC = -100uA ; IE = 0A
IC = -1mA ; IB = 0A
V
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = -100uA ; IC = 0A
-6
−
V
ICEX
collector cut-off current
IBL
base cut-off current
VEB(OFF) = -0.4V ; VCE = -35 V
VEB(OFF) = -0.4V ; VCE = -35 V
−
−
-100
-100
nA
nA
IC = -100uA; VCE = -1V
30
IC = -1 mA; VCE = -1V
IC = -10 mA; VCE = -1V
IC = -150 mA; VCE = -2V
−
−
IC = -500 mA; VCE = -2V
60
100
100
20
hFE
DC current gain
−
300
−
VCEsat
collector-emitter saturation
IC = -150 mA; IB = -15 mA
IC = -500 mA; IB = -50 mA
−
−
-400
-750
mV
mV
VBEsat
base-emitter saturation voltage
IC = -150 mA; IB = -15 mA
IC = -500 mA; IB = -50 mA
-750
−
-950
-1300
mV
mV
Ccb
VCB=-10V; f=1.0MHZ; IE=0
−
−
1.5
0.1
8.5
30
15
8.0
pF
pF
KΩ
hre
hfe
hoe
output capacitance
input capacitance
input impedance
voltage feedback ratio
small signal current gain
output impedance
60
1.0
500
100
µS
fT
transition frequency
IC = -20 mA; VCE = - 10 V
f = 100 MHz
200
−
MHz
td
tr
delay time
rise time
VCC=-30V; IC=-150mA
VBE(off)=-2.0V; IB1=-15mA
ts
storage time
tf
fall time
VCC=-30V; IC=-150mA
IB1=IB2=-15mA
−
−
−
−
15
20
225
30
nS
nS
nS
nS
Ceb
hie
VEB=-0.5V; f=1.0MHZ; IC=0
VCE=-10V; f=1.0KHZ; IC=-1.0mA
x10 -4
RATING CHARACTERISTIC CURVES ( CHT4403N1PT )
1K
V CE = 1V
25 °C
100
10
1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
1000
Typical Capacitance
CAPACITANCE (pF)
30
f = 1MHz
20
C ibo
10
5.0
Cobo
1.0
-0.1
-1
-10
REVERSE BIAS VOLTAGE (V)
-50
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
Typical DC Current Gain
vs Collector Current
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
TR1 CHT4403 Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
IC /I B =10
0.4
0.3
0.2
25 °C
0.1
0
1
10
100
I C - COLLECTOR CURRENT (mA)
1000
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
V CE = 5V
- 50 °C
25 °C
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100