EIA1111-2 11.0-11.5 GHz 2-Watt Internally Matched Power FET UPDATED 02/17/2006 .060 MIN. FEATURES • • • • • • .650±.008 .512 ∆G PAE SN .004 IDSS Saturated Drain Current VP Pinch-off Voltage RTH .070 ±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. MIN TYP 33.0 34.0 dBm 10.0 11.0 dB Output Power at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Power Added Efficiency at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Drain Current at 1dB Compression .04 .094 .382 PARAMETERS/TEST CONDITIONS1 Id1dB DRAIN .022 YYWW ELECTRICAL CHARACTERISTICS (Ta = 25°C) G1dB .319 GATE .129 P1dB .060 MIN. EIA1111-2 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package SYMBOL Excelics MAX UNITS ±0.6 dB 32 f = 11.0-11.5GHz % 900 1100 mA VDS = 3 V, VGS = 0 V 1400 1800 mA VDS = 3 V, IDS = 14 mA -1.0 -2.5 3 Thermal Resistance 10 Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 11 V o C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12 8V Gate-Source Voltage -5 -3V PARAMETERS Forward Gate Current 21.6mA 7.2mA Reserve Gate Current -3.6mA -1.2mA Input Power 32.5dBm @ 3dB Compression o Channel Temperature 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 13W 13W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2006