FUJI 2SK3913

2SK3913-01MR FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Max. power dissipation
Symbol
V DS
VDSX
ID
ID(puls]
VGS
IAR
Ratings
250
220
14
±56
±30
14
EAS
301.1
dV DS /dt
dV/dt
-di/dt
PD
3.7
20
5
100
2.16
37
+150
-55 to +150
2
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Note *1
mJ
Note *2
mJ
kV/μs
kV/μs
A/μs
W
W
°C
°C
kVrms
Note *3
VDS <
= 250V
Note *4
Note *5
Equivalent circuit schematic
Drain(D)
Ta=25°C
Tc=25°C
Operating and storage
Tch
temperature range
Tstg
t=60sec, f=60Hz
Isolation voltage
VISO *6
<
Note *1 Tch =150°C
Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF <
= -ID, -di/dt=100A/μs, Vcc < BVDSS, Tch <
= 150°C
Note *5 IF -ID, -di/dt=100A/μs, Vcc <
= BVDSS, Tch <
= 150°C
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
V SD
t rr
Qrr
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
Tch=25°C
VDS=250V VGS=0V
Tch=125°C
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=7A VGS=10V
ID=7A VDS=25V
VDS =75V
VGS=0V
f=1MHz
VCC=48V ID=7A
VGS=10V
250
3.0
5
RGS=10 Ω
VCC =125V
ID=14A
VGS=10V
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/μs Tch=25°C
220
10
780
90
6
12
3
23
6
22
7
6
1.00
120
0.5
5.0
25
2.0
100
280
1170
135
9
18
4.5
35
9
33
11
9
1.50
250
1.25
V
V
μA
mA
nA
mΩ
S
pF
ns
nC
V
ns
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
3.378
58.0
Units
°C/W
°C/W
1
2SK3913-01MR
FUJI POWER MOSFET
Characteristics
40
Allowable Power Dissipation
PD=f(Tc)
35
35
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
30
20V
10V
30
25
8V
ID [A]
PD [W]
25
20
20
15
7V
10
6.5V
15
10
5
5
0
0
25
50
75
100
125
0
150
VGS=6V
0
2
4
6
8
10
12
14
16
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
100
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
10
gfs [S]
ID[A]
10
1
1
0.1
0.01
0
1
2
3
4
5
6
7
8
9
0.1
0.1
10
1
10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
0.9
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
0.7
7.0V
VGS=6.5V
0.8
RDS(on) [ Ω ]
0.8
7.5V
0.6
8V
0.7
0.6
RDS(on) [ Ω ]
1.0
100
ID [A]
10V
20V
0.5
0.4
0.5
max.
0.4
0.3
typ.
0.3
0.2
0.2
0.1
0.1
0.0
0
5
10
15
20
ID [A]
25
30
35
0.0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
2
2SK3913-01MR
7
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
24
20
Vcc= 50V
250V
max.
5
200V
16
4
VGS [V]
VGS(th) [V]
6
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25 °C
min.
3
12
8
2
4
1
0
-50
-25
0
25
50
75
100
125
0
150
0
10
20
30
Tch [°C]
10n
40
50
60
70
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
1n
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
Ciss
IF [A]
C [F]
10
100p
Coss
1
10p
Crss
1p
-1
10
10
0
10
1
10
2
0.1
0.00
3
10
0.25
0.50
VDS [V]
3
10
0.75
1.00
1.25
1.50
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
350
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
300
tf
IAS=5.6A
250
2
EAV [mJ]
10
t [ns]
td(off)
td(on)
200
IAS=8.4A
150
1
10
tr
50
0
0
10
IAS=14A
100
-1
10
10
0
10
ID [A]
1
10
2
0
25
50
75
100
125
150
starting Tch [°C]
3
2SK3913-01MR
2
Avalanche Current I AV [A]
10
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Single Pulse
1
10
0
10
-1
10
-2
10
-8
10
-7
10
-6
10
-5
10
-4
10
-2
10
10
-3
10
-2
-1
10
tAV [sec]
1
10
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
10
-5
10
-4
10
-3
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4