P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA94 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………-400V VCEO——Collector-Emitter Voltage……………………………-400V V EBO ——Emitter-Base Voltage………………………………-6V I C ——Collector Current……………………………………-300mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCES Typ Max Unit Test Conditions -400 V IC=-100μA, IE=0 Collector-Emitter Breakdown Voltage -400 V IC=-100μA, VBE =0 BVEBO Emitter-Base Breakdown Voltage -6 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -100 nA VCB=-300V, IE=0 IEBO Emitter-Base Cut-off Current -100 nA VEB=-4V, IC=0 ICES Collector Cut-off Current -1 μA VCE=-400V, VBE=0 HFE（1） DC Current Gain 40 VCE=-10V, IC=-1mA HFE（2） 60 HFE（3） 45 VCE=-10V, IC=-50mA HFE（4） 40 VCE=-10V, IC=-100mA VCE(sat1) Collector- Emitter Saturation Voltage VCE(sat2) VBE(sat) Base-Emitter Saturation Voltage Cob Output Capacitance 7 300 VCE=-10V, IC=-10mA -0.5 V IC=-10mA, IB=-1mA -0.75 V IC=-50mA, IB=-5mA -0.75 V IC=-10mA, IB=-1mA pF VCB=20V, IE=0，F=1MHz