SAVANTIC 2SC3505

SavantIC Semiconductor
Product Specification
2SC3505
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·High speed switching
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
6
A
IB
Base current
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to case
MAX
1.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC3505
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
700
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=900V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
1.0
µs
5.0
µs
1.0
µs
10
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3A;IB1=0.6A;IB2=-1.2A
RL=100D,PW=20µs
DutyE2%
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC3505