Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 18 V VCEO Collector-emitter voltage Open base 18 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1 A ICM Collector current-peak 2 A PC Collector power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Ta=25℃ Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A ;IB=50m A 0.5 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50m A 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 18 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 18 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 5 V hFE-1 DC current gain IC=500mA ; VCE=2V 90 hFE-2 DC current gain IC=1.5A ; VCE=2V 50 ICBO Collector cut-off current VCB=10V ; IE=0 1 μA ICEO Collector cut-off current VCE=18V ; IB=0 10 μA COB Output capacitance IE=0; VCB=6V; f=1MHz 12 pF fT Transition frequency IE=-50mA ;VCB=6V;f=200MHz 150 MHz B hFE-1 classifications Q R S 90-155 130-210 180-280 2 280 Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors 4