ISC 2SC1226

Inchange Semiconductor
Product Specification
2SC1226 2SC1226A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-202 package
·Complement to type 2SA699/699A
APPLICATIONS
·For medium power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC1226
VCBO
Collector-base voltage
32
Open base
2SC1226A
VEBO
Emitter-base voltage
V
50
2SC1226
Collector-emitter voltage
UNIT
40
Open emitter
2SC1226A
VCEO
VALUE
V
40
Open collector
5
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
IB
Base current
0.6
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1226 2SC1226A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2 A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2 A
V(BR)CBO
2SC1226
Collector-base
breakdown voltage
MAX
UNIT
0.4
1.0
V
1.5
V
IC=1mA;IE=0
2SC1226
Collector-emitter
breakdown voltage
V
50
32
IC=10mA; IB=0
V
40
2SC1226A
‹
TYP.
40
2SC1226A
V(BR)CEO
MIN
ICBO
Collector cut-off current
VCB=20V; IE=0
1
μA
ICEO
Collector cut-off current
VCE=12V; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=5V;f=1MHz
50
pF
fT
Transition frequency
IE=0.5A ; VCB=5V
150
MHz
hFE classifications
P
Q
R
50-100
80-160
100-220
2
50
220
Inchange Semiconductor
Product Specification
2SC1226 2SC1226A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
2SC1226 2SC1226A
Silicon NPN Power Transistors
4
Inchange Semiconductor
Product Specification
2SC1226 2SC1226A
Silicon NPN Power Transistors
5