ISC 2SA1261

Inchange Semiconductor
Product Specification
2SA1261
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SC3157
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-10
A
ICM
Collector current-Peak
-20
A
IB
Base current
-3.5
A
PT
Total power dissipation
B
Ta=25℃
1.5
TC=25℃
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1261
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-5A ;IB1=-0.5A;L=1mH
VCE(sat)
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.6
V
VBE(sat)
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-0.01
mA
ICEX
Collector cut-off current
VCE=-100V; VBE=-1.5V
Ta=125℃
-0.01
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.01
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
200
hFE-2
DC current gain
IC=-3A ; VCE=-5V
40
200
hFE-3
DC current gain
IC=-5A ; VCE=-5V
20
-100
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;IB1=-IB2=-0.5A ,
RL=10Ω;VCC=-50V
hFE-2 classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SA1261
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3